MICROSEMI MXP1050PV-IR

2830 S. Fairview St.
Santa Ana, CA 92704
PH: 714.979.8220
FAX: 714.557.5989
MXP1048 PC/PV - IR
MXP1049 PC/PV - IR
MXP1050 PC/PV - IR
MXP1002 PC/PV - IR
IR Enhanced Photo Detectors
Features
•
•
•
•
High Break Down Voltage
Low Dark Current
Low Noise
Fast Rise/Fall Time
Applications
• Fiber Optics
• Military / Aerospace
• Industrial Controls
Electrical Characteristics @ 25oC
ACTIVE AREA
PV
DEVICE #
R
CJ
RSH
NEP
900nm
0V / 1kHz
+/-10 mV
900nm / 1kHz
TR
0V/900nm
50Ohm Load
mm2
Dia.
Inch
A/W
pF
MOhms
W/(Hz)1/2
ns
MXP1048 PV-IR
1.0
0.044
0.5
150
5,000
5 X 10-15
5,000
MXP1049 PV-IR
5.1
0.100
0.5
550
500
2 X 10-14
500
MXP1050 PV-IR
100
0.444
0.5
11,000
50
1 X 10-13
50
MXP1002 PV-IR
1.8
0.10 x .028
0.5
275
2,500
3 X 10-14
2,500
PHOTOVOLTAIC
ACTIVE AREA
R
PC
ID
VB
10 µA
CJ
1kHz
V
pF
NEP
10V/900nm
1kHz
A/W
DEVICE #
mm2
Dia. Inch 900nm
nA
TR
900nm/50Ohm
Load
ns
PEAK
0.01V
-1.0V
-10V
min
0V
-1 V
-10 V
W/(Hz)1/2
0V
-10 V
MXP1048 PC-IR
1.0
0.044
0.5
0.6
0.01
0.10
2.0
50
25
20
10
5 X 10-14
1,000
50
MXP1049 PC-IR
5.1
0.100
0.5
0.6
0.10
1.00
10.0
50
100
85
35
1 X 10-13
3,000
100
MXP1050 PC-IR
100
0.444
0.5
0.6
1.00
10.0
100
50
2,000
1,700
650
5 X 10-13
5,000
500
MXP1002 PC-IR
1.8
0.10 x 0.28
0.5
0.6
0.20
0.20
5.0
50
50
40
20
1 X 10-13
2,000
50
PHOTOCONDUCTIVE
Data Sheet # MSC0941
Updated:October 1998
O p t o Pro d u c t s