EMC EM25LV010-33MS

EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
General Description
The EM25LV010 is a 1 M bits Flash memory organized as 128K x 8 bits and uses a single
voltage of 2.7-3.6V for Program and Erase. It features a typical 2ms Page-Program time and
a typical 40ms Block-Erase time. The device uses status register to detect the completion of
the Program or Erase operation. To protect against inadvertent write, the device has on-chip
hardware and software data protection schemes. The device offers typical 100,000 cycles
endurance and a greater than 10 years data retention. The EM25LV010 conforms to SPI
Bus compatible Serial Interface. It consisted of four pins (serial clock, chip select, serial data
in, and serial data out) that support high-speed serial data transfers of up to 33MHz. The
Hold pin, Write Protect pin, and Programmable Write Protect features provide flexible control.
The EM25LV010 is offered in 8-lead SO package and known good die (KGD). For KGD,
please contact ELAN Microelectronics or its representatives for detailed information (see
Appendix at the bottom of this specification for Ordering Information).
The EM25LV010 devices are suitable for applications that require memories with convenient
and economical updating of program, data or configurations, e.g., graphic cards, hard disk
drives, networking cards, digital camera printer, LCD monitors, cordless Phones, etc.
Features
Single Power Supply
• Full voltage range from 2.7 to 3.6
volts for both read and write operations
• Regulated voltage range: 3.0 to 3.6
volts for both read and write operations
Erase Features
• Block-Erase Time: 40ms (Typical)
• Chip-Erase Time: 40ms (Typical)
Small block Erase Capability
Block: Uniform 32K bytes
Automatic Write Timing
• Internal VPP Generation
Clock Rate
• 33MHz (Maximum)
SPI Bus Compatible Serial Interface
Power Consumption
• Active Current: 4mA (Typical)
• Power-down Mode Standby
current: 1µA (Typical)
High Reliability:
• Endurance cycles: 100K (Typical)
• Data retention: 10 years
Page Program Features
• Up to 256 Bytes in 2ms (Typical)
Package Option
• 8-lead-SO (150 mil)
This specification is subject to change without further notice. (11.08.2004 V1.0)
Page 1 of 30
EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
Pin Assignments
S#
1
Q
2
W#
VSS
8
VCC
SO8 7
Top View
3
6
4
5
HOLD#
C
D
Figure 0: Pin Assignments
Pin Description
Pin Name
Function
C
Serial Clock 1
D
Serial Data Input 2
Q
Serial Data Output 3
S#
Chip Select 4
W#
Write Protect 5
Hold#
Hold 6
VDD
Supply Voltage
VSS
Ground
Table 1: Pin Description
1 Serial Clock (C):
This input pin provides the timing for serial input and output operations. Instructions,
addresses, or data present at Serial Data Input (D) are latched on the rising edge of Serial
Clock (C). Data on Serial Data Output (Q) changes after the falling edge of Serial Clock (C).
2 Serial Data Input (D):
This input pin provides a means for instructions, addresses, and data to be serially written to
the device. Data is latched on the rising edge of Serial Clock (C).
3 Serial Data Output (Q):
This output pin provides a means for data and status to be serially read from the device. Data
is shift out on the falling edge of Serial Clock (C).
This specification is subject to change without further notice. (11.08.2004 V1.0)
Page 2 of 30
EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
4 Chip Select (S#):
When this input signal is High, the device is deselected and Serial Data Output (Q) is at high
impedance state. Unless an internal Program, Erase, or Write Status Register cycle is in
progress, the device will be in the Standby mode (this is not the Deep Power-down mode).
Driving Chip Select (S#) Low enables the device, and places it in the active power mode.
After Power-up, a falling edge on Chip Select (S#) is required prior to the start of any
instruction.
5 Write Protect (W#):
This input pin can be used to prevent the Status Register from being written and active low.
When used in conjunction with the Status Register’s Block Protect (BP1 and BP1) bits and
Status Register Protect (SRWD) bits, a portion of or the entire memory array can be hardware
protected.
6 Hold (HOLD#):
This input pin is used to pause any serial communications with the device without the need to
deselect the device. When HOLD# is brought low, the Serial Data Output (Q) is at high
impedance state, and Serial Data Input (D) & Serial Clock (C) are Don’t Care. To start the
Hold condition, the device must be selected with Chip Select (S#) driven Low.
SPI Modes
These devices can be driven by a microcontroller with its SPI peripheral running in either of
the two following modes:
CPOL=0, CPHA=0
CPOL=1, CPHA=1
Under these two modes, input data is latched in on the rising edge of Serial Clock (C), and
output data is available from the falling edge of Serial Clock (C).
The difference between the two modes, as shown in Figure 2, is the clock polarity when the
bus master is in Stand-by mode and not transferring data:
C remains at 0 for (CPOL=0, CPHA=0)
C remains at 1 for (CPOL=1, CPHA=1)
This specification is subject to change without further notice. (11.08.2004 V1.0)
Page 3 of 30
EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
SDO
SPI Interface
with(CPOL,CPHA)
=(0,0) or (1,1)
SDI
SCK
C
Bus Master
(ST6, ST7, ST9,
ST10, Others)
Q
D
C
SPI
Mem ory
Device
Q
D
C
SPI
Mem ory
Device
Q
D
SPI
Mem ory
Device
CS3 CS2 CS1
S#
W#
HOLD#
S#
W#
HOLD#
S#
W#
HOLD#
Figure 1: Bus Master and Memory Devices on the SPI Bus
C
(CPOL=CPHA=0)
C
(CPOL=CPHA=1)
D
MSB
Q
MSB
Figure 2: SPI Modes Supported
This specification is subject to change without further notice. (11.08.2004 V1.0)
Page 4 of 30
EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
Memory Organization
The memory is organized as:
131,072 Bytes (8 bits per byte)
4 Blocks (256K bits or 32,768 bytes per block)
512 Pages (256 bytes per page)
Each page can be individually programmed (bits are programmed from “1” to “0”). The
device is Block or Chip Erasable (bits are erased from “0” to “1”), but not Page Erasable.
Block
3
2
1
0
Address Range
18000h
1FFFFh
10000h
17FFFh
08000h
0FFFFh
00000h
07FFFh
Table 2: Memory Organization
Hold#
W#
S#
Control Logic
C
D
Q
I/O Buffer and Data Latches
Address Register
and Counter
Status
Register
256 Byte Data Buffer
1FFFFh
Block3
X-Decoder
18000h
Block2
10000h
Size of the
read-only
m em ory area
Block1
08000h
Block0
00000h
000FFh
256 Bytes (Page Size)
Y-Decoder
Figure 2: SPI Modes Supported
This specification is subject to change without further notice. (11.08.2004 V1.0)
Page 5 of 30
EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
Status Register
The Status Register contains a number of status and control bits that can be read or set by
specific instructions. Refer to Table 3 below for details.
BUSY Bit
The (BUSY) bit is a read only bit in the status register, which is set to “1” state when the device
is executing the Write Status Register, Program, or Erase cycle while the device ignores
further instructions except for the Read Status Register instruction. When the Program,
Erase, or Write Status Register instruction is completed, the (BUSY) bit will be cleared to “0”
state indicating the device is ready for further instructions.
WEL Bit
The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch.
When setting to “1,” the internal Write Enable Latch is set. When setting to “0,” the internal
Write Enable Latch is reset and no Write Status Register, Program, nor Erase instruction is
accepted.
BP1, BP0 Bits
The Block Protect (BP1, BP0) bits are non-volatile. They define the size of the area to be
software protected against Program and Erase instructions. These bits are written with the
Write Status Register (WRSR) instruction. When one or both of the Block Protect (BP1, BP0)
bits is set to “1”, the relevant memory area, as defined in Table 4, becomes protected against
Page Program (PP) and Block Erase (BE) instructions. The Block Protect (BP1, BP0) bits can
be written provided that the Hardware Protected mode has not been set. The Chip Erase
(CE) instruction is executed if, and only if, both Block Protect (BP1, BP0) bits are set to “0.”
SRWD Bit
The Status Register Write Disable (SRWD) bit is operated in conjunction with the Write
Protect (W#) signal. The Status Register Write Disable bit and Write Protect signal allow the
device to be located in the Hardware Protected mode (when the Status Register Write Disable
(SRWD) bit is set to “1,” and Write Protect (W#) is driven Low). In this mode, the non-volatile
bits of the Status Register (SRWD, BP1, and BP0) become read-only bits and the Write Status
Register (WRSR) instruction is no longer accepted for execution.
This specification is subject to change without further notice. (11.08.2004 V1.0)
Page 6 of 30
EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
b7
b0
0
SRWD
0
0
BP1 BP0 WEL BUSY
Status Register Write Protect
Block Protect Bits
Write Enable Latch Bit
BUSY Bit
Table 3: Status Register Format
Status Register
Content
Memory Contents
BP1 Bit
BP0 Bit
Protected Area
Unprotected Area
0
0
None
All blocks* (4 blocks: 0, 1, 2. & 3)
0
1
Upper quarter (Block 3)
Lower three-quarters (3 blocks: 0 to 2)
1
0
Upper half (2 blocks: 2 and 3)
Lower half (Two blocks: 0 and 1)
1
1
All blocks (4 blocks: 0, 1, 2. & 3)
None
* The device is ready to accept a Chip Erase instruction provided that both Block Protects
(BP1 and BP0) are set to “0”.
Table 4: Protected Area Sizes
This specification is subject to change without further notice. (11.08.2004 V1.0)
Page 7 of 30
EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
Device Operation
The EM25LV010 uses Instruction to initiate the memory operation functions. The
Instructions are written to the device by asserting Serial Data In (D) input while keeping Chip
Select (S#) Low and are latched on the rising edge of Serial Clock(C).
Operation
S#
Hold#
W#
D
Q
Read
VIL
VIH
VIH
X
Write
VIL
VIH
VIH
Address/Data In
Data Out
High Z /
Status Register out
Standby
Deep Power Down Mode1
VIL
VIL
VIH
VIH
VIH
VIH
X
X
High Z
High Z
Hold
VIL
VIL
VIH
X
High Z
VIL
VIH
VIH
X
High Z
VIL
VIH
VIL
X
High Z
2
Write Protect
Status Register Write
3
Inhibit
Note: 1 See Table 7 for the Instruction Set of Deep Power Down Mode.
2 Write Protect is enabled with the Status Register parameter BP0 and BP1 (see Table 4).
3 Status Register Write Inhibit will be combined with Status Register Write Disable (SRWD) and
Write Protect (W#) (see Table 6).
Table 5: EM25LV010 Device Operation
Hold Function
The Hold (HOLD#) signal allows the EM25LV010 operation to be paused while it is actively
selected with S# at low. To enter into the Hold condition, the device must be selected with
Chip Select (S#) at Low. However, setting this Hold signal Low does not terminate any Write
Status Register, Program, or Erase cycle that is currently in progress.
The Hold condition starts on the falling edge of the Hold (HOLD#) signal, provided that this
coincides with Serial Clock (C) being at Low (shown in Figure 9). The Hold condition ends on
the rising edge of the Hold (HOLD#) signal, provided that this coincides with Serial Clock (C)
being at Low as well.
If the falling edge does not coincide with Serial Clock (C) being at Low, the Hold condition will
start when Serial Clock (C) goes Low. Similarly, if Serial Clock (C) is not at Low, the Hold
condition will end when Serial Clock (C) goes to Low (this is shown in Figure 9). During the
Hold condition, the Serial Data Output (Q) is at high impedance, and the Serial Data Input (D)
& Serial Clock (C) are Don’t Care.
Normally, the device is kept selected with Chip Select (S#) driven Low for the whole duration
of the Hold condition. This is to assure that the state of the internal logic remains unchanged
from the moment it enters the Hold condition.
This specification is subject to change without further notice. (11.08.2004 V1.0)
Page 8 of 30
EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
If Chip Select (S#) goes High while the device is in the Hold condition, the internal logic of the
device will be reset. To restart communication with the device, it is necessary to drive Hold
(HOLD#) to High, and then drive Chip Select (S#) to Low. This prevents the device from
going back to the Hold condition.
Write Protect
The EM25LV010 offers the following data protection mechanism features to prevent
inadvertent write from noisy environment:
Power-On Reset and an internal timer (tPUW) can provide protection against inadvertent
changes while the power supply is outside the operating specification.
Program, Erase, and Write Status Register instructions consisting of a number of clock
pulses in multiple of eight, will be checked before they are accepted for execution.
All instructions that modify data must be preceded by a Write Enable (WREN) instruction
to set the Write Enable Latch (WEL) bit. This bit is returned to its reset state by the
following events:
•
•
•
•
•
•
Power-up
Write Disable (WRDI) instruction completion
Write Status Register (WRSR) instruction completion
Page Program (PP) instruction completion
Block Erase (BE) instruction completion
Chip Erase (CE) instruction completion
The Block Protect (BP1, BP0) bits allow part of the memory to be configured as read-only.
This is the Software Protected Mode (SPM).
The Write Protect (W#) signal, in collaboration with the Status Register Write Disable
(SRWD) bit, allows the Block Protect (BP1, BP0) bits and Status Register Write Disable
(SRWD) bit to be write-protected. This is the Hardware Protected Mode (HPM).
In addition to the low power consumption feature, the Deep Power-down mode offers
extra software protection from inadvertent Write from Program and Erase because all
instructions are ignored except one particular instruction (the Release from Deep Power
down instruction).
The protection features of the device are summarized in the following table (Table 6).
When the Status Register Write Disable (SRWD) bit of the Status Register is set at “0” (its
initial delivery state), it is possible to write to the Status Register provided that the Write
Enable Latch (WEL) bit has previously been set by a Write Enable (WREN) instruction,
regardless of whether Write Protect (W#) is driven High or Low.
This specification is subject to change without further notice. (11.08.2004 V1.0)
Page 9 of 30
EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
When the SRWD bit of the Status Register is set to “1,” two conditions need to be considered
according to the state with which Write Protect (W#) is in:
If Write Protect (W#) is driven High, it is allowed to write to the Status Register provided
that the Write enable Latch (WEL) bit has been previously set by a Write Enable (WREN)
instruction.
If Write Protect (W#) is driven Low, it is not allowed to write to the Status Register even if
the Write Enable Latch (WEL) bit has previously been set by a Write Enable (WREN)
instruction (attempts to write to the Status Register will be rejected and will not be
accepted for execution). Therefore, all data bytes in the memory area that are software
protected (SPM) by the Block Protect (BP1, BP0) bits of the Status Register, are also
hardware protected against data modification.
Regardless of the order of the above two conditions, the Hardware Protected Mode (HPM)
can be entered by–
setting the Status Register Write Disable (SRWD) bit after driving Write Protect (W#)
Low,
or
driving Write Protect (W#) Low after setting the Status Register Write Disable (SRWD)
bit.
The only way to exit from the Hardware Protected Mode (HPM) once it is entered, is to drive
Write Protect (W#) High. If Write Protect (W#) is permanently tied to High, the Hardware
Protected Mode (HPM) can never be activated. However, the Software Protected Mode (SPM)
can be activated by using the Block Protect (BP1, BP0) bits of the Status Register.
W# SRWD
Signal Bit
1
0
0
0
1
1
0
1
Mode
Write Protection of the
Status Register
Memory Content
Protected Area1
Unprotected Area1
Software
Protected
(SPM)
Status Register is Writable (provided
that the WREN instruction has set the Protected against Page
WEL bit).
Program, Block Erase
and Chip Erase.
The values in the SRWD, BP1 and
BP0 bits can be changed.
Ready to accept Page
Program, and Block
Erase instructions.
Hardware
Protected
(HPM)
Status Register is Hardware write
protected. The values in the SRWD,
BP1 and BP0 bits cannot be
changed.
Ready to accept Page
Program, and Block
Erase instructions.
Protected against Page
Program, Block Erase
and Chip Erase.
Table 6: Protection Modes
This specification is subject to change without further notice. (11.08.2004 V1.0)
Page 10 of 30
EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
Instructions
All instructions, addresses, and data are shifted in and out of the device with the most
significant bit shifted first.
Serial Data Input (D) is sampled on the first rising edge of Serial Clock (C) after Chip Select
(S#) is driven Low. Then, the one-byte instruction code must be shifted in to the device with
the most significant bit entered first on Serial Data Input (D), and each bit being latched on the
rising edges of Serial Clock (C). The instruction set is listed in Table 7 below.
Depending on the instruction, the one-byte instruction code is followed by address bytes or
data bytes, or both, or none at all. Chip Select (S#) must be driven High after the last bit of
the instruction sequence has been shifted in.
At the end of a Page Program (PP), Block Erase (BE), Chip Erase (CE), or Write Status
Register (WRSR) instruction, Chip Select (S#) must be driven High exactly at a byte boundary.
Otherwise the instruction will be rejected and not executed. That is, Chip Select (S#) must be
driven High when the number of clock pulses after Chip Select (S#) being driven Low, is an
exact multiple of eight. All attempts to access the memory array during a Write Status
Register cycle, Program cycle, or Erase cycle are ignored, and the internal Write Status
Register cycle, Program cycle, or Erase cycle will continue ineffectively.
Instruction
Description
One-byte Instruction Code
Address Dummy Data
Bytes Bytes Bytes
WREN
Write Enable
0000 0110
0
0
0
WRDI
Write Disable
0000 0100
0
0
0
RDSR
Read Status Register
0000 0101
0
0
1 to ∞
WRSR
Write Status Register
0000 0001
0
0
1
READ
Read Data Bytes
0000 0011
3
0
1 to ∞
FAST READ
Read Data Bytes at Higher Speed
0000 1011
3
1
1 to ∞
PP
Page Program
0000 0010
3
0
1 to 256
BE
Block Erase
1101 1000
3
0
0
CE
Chip Erase
1100 0111
0
0
0
DP
Deep Power-down
1011 1001
0
0
0
RES
Release from Deep Power-down, and
Read Device ID
1010 1011
0
3
1 to ∞
RDID
Read Manufacturer/Device ID
Release from Deep Power-down
1001 0000
0
0
0
0
3
1 to ∞
Table 7: Instruction Set
This specification is subject to change without further notice. (11.08.2004 V1.0)
Page 11 of 30
EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
Write Enable (WREN)
The Write Enable (WREN) instruction (Figure 10) sets the Write Enable Latch (WEL) bit to “1”.
The Write Enable Latch (WEL) bit must be set prior to the Page Program (PP), Block Erase
(BE), Chip Erase (CE), and Write Status Register (WRSR) instructions. The Write Enable
(WREN) instruction is entered by driving Chip Select (S#) Low, sending the instruction code,
and then driving Chip Select (S#) High.
Write Disable (WRDI)
The Write Disable (WRDI) instruction (Figure 11) resets the Write Enable Latch (WEL) bit to
“0.” The Write Disable (WRDI) instruction is entered by driving Chip Select (S#) Low,
sending the instruction code, and then driving the Chip Select (S#) High. The Write Enable
Latch (WEL) bit is reset under the following conditions:
Power-up
Write Disable (WRDI) instruction completed
Write Status Register (WRSR) instruction completed
Page Program (PP) instruction completed
Block Erase (BE) instruction completed
Chip Erase (CE) instruction completed
Read Status Register (RDSR)
The Read Status Register (RDSR) instruction allows the 8-bit Status Register to be read.
The Status Register may be read any time, even while a Program, Erase, or Write Status
Register cycle is in progress. When one of these cycles is in progress, it is recommended to
check the (BUSY) bit before sending a new instruction to the device. It is also allowed to read
the Status Register continuously, as shown in Figure 12.
An improvement in the time to Write Status Register (WRSR), Program (PP), or Erase (SE,
BE or CE) can be achieved by not waiting for the worst-case delay (tW, tPP, tSE, tBE or tCE).
The (BUSY) bit is provided in the Status Register so that the system application program can
monitor its value, polling it to “0” when the previous Write cycle, Program cycle, or Erase cycle
is completed.
Write Status Register (WRSR)
The Write Status Register (WRSR) instruction allows new values to be written to the Status
Register. Before it is accepted, a Write Enable (WREN) instruction must be executed first.
After the Write Enable (WREN) instruction has been decoded and executed, the device sets
the Write Enable Latch (WEL).
This specification is subject to change without further notice. (11.08.2004 V1.0)
Page 12 of 30
EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
The Write Status Register (WRSR) instruction is entered by driving the Chip Select (S#) Low,
followed by the instruction code and the data byte on Serial Data Input (D). The instruction
sequence is shown in Figure 13. The Write Status Register (WRSR) instruction has no effect
on Bits 6, 5, 4, 1, & 0 of the Status Register. Bits 6, 5, & 4 are always read as “0.”
Chip Select (S#) must be driven High after the eighth bit of the data byte has been latched in.
Otherwise, the Write Status Register (WRSR) instruction will not execute. As soon as Chip
Select (S#) is driven High, the self-timed Write Status Register cycle (whose duration is tW) is
initiated. While the Write Status Register cycle is in progress, the Status Register may still be
read to check the value of the (BUSY) bit. The (BUSY) bit is “1” during the self-timed Write
Status Register cycle, and is “0” when it is completed. At some unspecified time before the
cycle is completed, the Write Enable Latch (WEL) is reset.
The Write Status Register (WRSR) instruction allows user to change the values of the Block
Protect (BP1, BP0) bits, and to define the size of the area that is to be treated as read-only as
defined in Table 4. The Write Status Register (WRSR) instruction also allows the user to set
or reset the Status Register Write Disable (SRWD) bit in accordance with the Write Protect
(W#) signal. The Status Register Write Disable (SRWD) bit and Write Protect (W#) signal
allow the device to be put in the Hardware Protected Mode (HPM). The Write Status Register
(WRSR) instruction will not be executed once the Hardware Protected Mode (HPM) is
entered.
Read Data Bytes (READ)
The Read Data instruction allows one or more data bytes to be read in sequence from the
memory. The instruction is initiated by driving the Chip Select (S#) Low. The instruction
code for the Read Data Bytes (READ) instruction is followed by a 3-byte address (A23-A0),
each bit being latched in during the rising edge of Serial Clock (C). Then the memory data at
that address is shifted out on Serial Data Output (Q) with each bit being shifted out at a
maximum frequency fR during the falling edge of Serial Clock (C).
The instruction sequence is shown in Figure 14. The first byte address can be situated at any
location. The address is automatically incremented to the next higher address after each
byte of data is shifted out. The whole memory can, therefore, be read with a single Read
Data Bytes (READ) instruction. When the highest address is reached, the address counter
rolls over to 000000h, allowing the read sequence to continue indefinitely.
The Read Data Bytes (READ) instruction is terminated by driving Chip Select (S#) High.
Chip Select (S#) can be driven High at any time during data output. Any Read Data Bytes
(READ) instruction executed while a Program or Write cycle is in progress, is rejected without
having any effects on the cycle that is in progress.
This specification is subject to change without further notice. (11.08.2004 V1.0)
Page 13 of 30
EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
Read Data Bytes at Higher Speed (FAST-READ)
The Read Data instruction allows one or more data bytes to be sequentially read from the
memory. The instruction is initiated by driving Chip Select (S#) Low. The instruction code
for the Read Data Bytes at Higher Speed (FAST_READ) instruction is followed by a 3-byte
address (A23-A0) and a dummy byte with each bit being latched in during the rising edge of
Serial Clock (C). Then the memory data at that address is shifted out on Serial Data Output
(Q) with each bit being shifted out at a maximum frequency fC during the falling edge of Serial
Clock (C).
The instruction sequence is shown in Figure 15. The first byte address can be at any location.
The address is automatically incremented to the next higher address after each byte of data is
shifted out. The whole memory can, therefore, be read with a single Read Data Bytes at
Higher Speed (FAST_READ) instruction. When the highest address is reached, the address
counter rolls over to 000000h; allowing the read sequence to continue indefinitely.
The Read Data Bytes at Higher Speed (FAST_READ) instruction is terminated by driving Chip
Select (S#) High. Chip Select (S#) can be driven High at any time during data output. Any
Read Data Bytes at Higher Speed (FAST_READ) instruction executed while a Program or
Write cycle is in progress is rejected without having any effects on the cycle that is in progress.
Page Program (PP)
The Page Program (PP) instruction allows 256 bytes of data to be programmed to the memory
locations that have been erased before the Page Program. Before it can be accepted, a
Write Enable (WREN) instruction must be executed first.
After the Write Enable (WREN) instruction has been decoded, the device sets the Write
Enable Latch (WEL). The Page Program (PP) instruction is entered by driving Chip Select
(S#) Low, followed by the instruction code, three address bytes, and at least one data byte on
Serial Data Input (D). If the 8 least significant address bits (A7-A0) are not all zeroes, all
transmitted data that go beyond the end of the current page are programmed from the start
address of the same page (from the address whose 8 least significant bits, A7-A0, are all
zeroes).
Chip Select (S#) must be driven Low for the entire duration of the sequence. The instruction
sequence is shown in Figure 16. If more than 256 bytes are sent to the device, the previously
latched data will be discarded and the last 256 data bytes will be programmed correctly within
the same page. If less than 256 Data bytes are sent to device, they will be programmed
correctly at the requested addresses without having any effects on the other location of the
same page. Chip Select (S#) must be driven High after the eighth bit of the last data byte has
been latched in, otherwise the Page Program (PP) instruction will not execute.
This specification is subject to change without further notice. (11.08.2004 V1.0)
Page 14 of 30
EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
As soon as Chip Select (S#) is driven High, the self-timed Page Program cycle (whose
duration is tPP) is initiated. While the Page Program cycle is in progress, the Status Register
may be read to check the value of the (BUSY) bit. The (BUSY) bit is “1” during the self-timed
Page Program cycle, and is “0” when it is completed. At some unspecified time before the
cycle is completed, the Write Enable Latch (WEL) bit is reset.
A Page Program (PP) instruction applied to a page that is protected by the Block Protect (BP1,
BP0) bits (see Tables 2 and 4) will not be executed.
Block Erase
The Block Erase (BE) instruction sets all bits inside the chosen block to “1” (FFh). Before it
can be accepted, a Write Enable (WREN) instruction must be previously executed. After the
Write Enable (WREN) instruction has been decoded, the device sets the Write Enable Latch
(WEL). The Block Erase (BE) instruction is entered by driving the Chip Select (S#) Low,
followed by the instruction code, and three address bytes on Serial Data Input (D). Any
address inside the Block (see Table 3) is a valid address for the Block Erase (BE) instruction.
Chip Select (S#) must be driven Low for the entire duration of the sequence.
The instruction sequence is shown in Figure 17. Chip Select (S#) must be driven High after
the eighth bit of the last address byte has been latched in, otherwise, the Block Erase (BE)
instruction will not execute. As soon as the Chip Select (S#) is driven High, the self-timed
Block Erase cycle (whose duration is tSE) is initiated. While the Block Erase cycle is in
progress, the Status Register may be read to check the value of the (BUSY) bit. The (BUSY)
bit is “1” during the self-timed Block Erase cycle, and is “0” when it is completed. At some
unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset.
A Block Erase (BE) instruction applied to a page that is protected by the Block Protect (BP1,
BP0) bits (see Tables 3 and 2) will not be executed.
Chip Erase
The Chip Erase (CE) instruction sets all bits of the memory array to “1” (FFh). Before it can
be accepted, a Write Enable (WREN) instruction must be previously executed. After the
Write Enable (WREN) instruction has been decoded, the device sets the Write Enable Latch
(WEL). The Chip Erase (CE) instruction is entered by driving the Chip Select (S#) Low,
followed by the instruction code on Serial Data Input (D). The Chip Select (S#) must be
driven Low for the entire duration of the sequence.
This specification is subject to change without further notice. (11.08.2004 V1.0)
Page 15 of 30
EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
The instruction sequence is shown in Figure 18. The Chip Select (S#) must be driven High
after the eighth bit of the instruction code has been latched in, otherwise, the Chip Erase
instruction will not execute. As soon as Chip Select (S#) is driven High, the self-timed Chip
Erase cycle (whose duration is tBE) is initiated. While the Chip Erase cycle is in progress, the
Status Register may be read to check the value of the (BUSY) bit. The (BUSY) bit is “1”
during the self-timed Chip Erase cycle, and is “0” when it is completed. At some unspecified
time before the cycle is completed, the Write Enable Latch (WEL) bit is reset.
The Chip Erase (CE) instruction is executed only if both Block Protect (BP1, BP0) bits are set
at “0”. The Chip Erase (CE) instruction is ignored if one or more blocks are protected.
Deep Power-Down (DP)
Executing the Deep Power-Down (DP) instruction is the only way to put the device in the
lowest power consumption mode (the Deep Power-Down mode). It can also be used as an
extra software protection mechanism because in this mode, the device ignores all Write,
Program, and Erase instructions.
Driving Chip Select (S#) High will deselect the device, and put the device in Standby mode (if
there is no internal cycle currently in progress). Note that this is not the Deep Power-Down
mode. Deep Power-down mode can only be entered by executing the Deep Power-Down
(DP) instruction which reduces the standby current from ICC1 to ICC2 as specified in Table
13.
Once the device has entered the Deep Power-Down mode, all instructions are ignored except
for the Release from Deep Power-Down and Read Electronic Signature (RES) instruction.
This releases the device from this mode. The Release from Deep Power-Down (RES) and
Read Device ID instruction also allows the ID of the device to be output through Serial Data
Output (Q).
The Deep Power-Down mode automatically stops at Power-down, and the device always
powers up in the Standby mode.
The Deep Power-Down (DP) instruction is entered by driving Chip Select (S#) Low, followed
by the instruction code on Serial Data Input (D). Chip Select (S#) must be driven Low for the
entire duration of the sequence. The instruction sequence is shown in Figure 19.
Chip Select (S#) must be driven High after the eighth bit of the instruction code has been
latched in, otherwise the Deep Power-down (DP) instruction will not be executed. As soon as
Chip Select (S#) is driven High, it requires a delay of tDP before the supply current is reduced
to ICC2 and the Deep Power-Down mode is entered. Any Deep Power-Down (DP)
instruction executed while an Erase, Program or Write cycle is in progress, is rejected without
having any effects on the cycle that is in progress.
This specification is subject to change without further notice. (11.08.2004 V1.0)
Page 16 of 30
EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
Release from Deep Power-Down (RES) and Read Device ID
Once the device has entered the Deep Power-Down mode, all instructions are ignored except
the Release from Deep Power-Down (RES) and Read Device ID instruction. Executing this
instruction will take the device out of the Deep Power-Down mode. The instruction can also
be used to read the 8-bit Device ID of the device on Serial Data Output (Q).
The Release from Deep Power-Down (RES) and Read Device ID instruction always provides
access to the Device ID of the device, and can be applied even if the Deep Power-Down mode
has not been entered, except when an Erase, Program, or Write Status Register cycle is in
progress,
While an Erase, Program or Write Status Register cycle is in progress, any Release from
Deep Power-Down (RES) and Read Device ID instruction is not decoded and has no effect on
the cycle that is in progress.
The device features an 8-bit Device ID (value for the EM25LV010 is 10h). This can be read
using the Release from Deep Power-Down (RES) and Read Device ID instruction.
The device is first selected by driving Chip Select (S#) Low. The instruction code is followed
by 3 dummy bytes with each bit being latched in on Serial Data Input (D) during the rising edge
of Serial Clock (C). Then, the 8-bit Device ID, stored in the memory, is shifted out on Serial
Data Output (Q) with each bit being shifted out during the falling edge of Serial Clock (C).
The instruction sequence is shown in Figure 20. The Release from Deep Power-Down (RES)
and Read Device ID instruction is terminated by driving Chip Select (S#) High after the Device
ID has been read at least once. Sending additional clock cycles on Serial Clock (C), while
Chip Select (S#) is driven Low, causes the Device ID to be output repeatedly.
When Chip Select (S#) is driven High, the device is put in the Standby mode. If the device
was previously in the Deep Power-Down mode, the transition to the Standby mode is delayed
by tRES2. Chip Select (S#) must remain High for at least tRES2(max) as specified in Table
14. Once in the Standby mode, the device waits to be selected so that it can receive, decode,
and execute instructions. Driving Chip Select (S#) High after the 8-bit instruction byte is
received by the device, but before the whole of the 8-bit Device ID is transmitted for the first
time (as shown in Figure 21), still insures that the device is taken out of the Deep Power-Down
mode. It however, incurs a delay (tRES1) before the device is put in Standby mode. Chip
Select (S#) must remain High for at least tRES1(max), as specified in Table 14. Once in the
Standby mode, the device waits to be selected so that it can receive, decode, and execute
instructions.
This specification is subject to change without further notice. (11.08.2004 V1.0)
Page 17 of 30
EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
Read Manufacturer and Device ID (RDID)
The Read Manufacturer/Device ID (RDID) instruction provides both the JEDEC assigned
manufacturer ID and the specific device ID. The Read Manufacture/Device ID (RDID)
instruction is very similar to the Release from Deep Power-Down (RES) and Read Device ID
instruction. The instruction is initiated by driving the Chip Select (S#) Low and shifting the
instruction code “90h” followed by a 24-bit address (A23-A0) of 000000h. After which, the
Manufacturer ID for ELAN (7Fh, 7Fh, 1Fh) and the Device ID (10h) are shifted out on the
falling edge of the serial clock (C) with the most significant bit (MSB) shifted out first as shown
in Figure 22. If the 24-bit address is initially set to 000001h, the Device ID will be read first
and then followed by the Manufacturer ID. The Manufacturer and Device ID can be read
continuously, alternating from one to the other. The instruction is completed by driving Chip
Select (S#) High.
Power-Up and Power-Down
At Power-up and Power-down, the device must not be selected (that is, the Chip Select, S#,
must follow the voltage applied on VCC) until VCC reaches the correct value:
Vcc(min) at Power-up, and then for a further delay of tVSL
Vss at Power-down
Usually a simple pull-up resistor on Chip Select (S#) is used to insure safe and proper
Power-up and Power-down.
To prevent data corruption and inadvertent write during power up, a Power On Reset (POR)
circuit is included in the device. The logic inside the device is held at reset when VCC is less
than the POR threshold value. All operations of VWI are disabled, and the device does not
respond to any instruction.
Moreover, the device ignores all Write Enable (WREN), Page Program (PP), Block Erase (BE),
Chip Erase(CE), and Write Status Register (WRSR) instructions until a time delay of tPUW has
elapsed after the instant where VCC rises above the VWI threshold. However, the device may
not operate correctly if VCC remains below VCC(min) at such time. No Write Status Register,
Program, or Erase instruction should be sent until–
tPUW after Vcc passed the VWI threshold
tVSL after Vcc passed the Vcc(min) level
These values are specified in Table 8.
If the delay (tVSL) has elapsed after VCC has risen above VCC(min), the device can be selected
for READ instructions even if the tPUW delay has not yet fully elapsed.
This specification is subject to change without further notice. (11.08.2004 V1.0)
Page 18 of 30
EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
At Power-up, the device is in the following state:
The device is in the Standby mode (not the Deep Power-Down mode).
The Write Enable Latch (WEL) bit is reset.
At Power-down, when VCC drops from the operating voltage to below the POR threshold value
(VWI), all operations are disabled and the device does not respond to any instruction. If a
Power-down occurs while a Write, Program, or Erase cycle is in progress, some data
corruption may occur.
VCC
VCC(max)
Program, Erase and Write Commands are Rejected by the Device
Chip Selection Not Allowed
tPUW
VCC(min)
Reset State of
the Device
tVSL
Read Access Allowed
VWI
Device Fully
Accessible
time
Figure 4: Power-up Timing
Symbol
Parameter
Min
Max
Unit
2
V
10
ms
VWI
Write Inhibit Voltage
1
tVSL
VCC(min) to S# low
10
tPUW
Time Delay to Write Instruction
1
µs
Table 8: Power-Up Timing and VWI Threshold Voltage
This specification is subject to change without further notice. (11.08.2004 V1.0)
Page 19 of 30
EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
Initial Delivery State
The device is delivered with the memory array erased, all bits are set to “1” (each byte
contains FFh). The Status Register contains 00h (all Status Register bits are set to “0”)
Maximum Rating
Stressing the device above the rating listed in the “Absolute Maximum Ratings" (see table
below) may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or any other conditions above those indicated in the Operating
sections of this specification is not implied. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Symbol
TSTG
TLEAD
Parameter
Storage Temperature
Lead Temperature during Soldering (20 seconds max)
VIO
Input and Output Voltage (with respect to ground)
VCC
Supply Voltage
VESD
Electrostatic Discharge Voltage (Human body model)
Min
Max
Unit
-65
150
°C
235
°C
-0.6
4.0
V
-0.6
4.0
V
-2000
2000
V
1
2
Notes: 1. IPC/JEDEC J-STD-020A
2. JEDEC Std JESD22-A114A (C1=100pF, R1=1500Ω, R2=500Ω)
Table 9: Absolute Maximum Ratings
DC and AC Parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC Characteristic tables are
derived from tests performed under the Measurement Conditions summarized in the relevant
tables.
Symbol
Parameter
Min
Max
Unit
VCC
Supply Voltage
2.7
2.6
V
TA
Ambient Operating Temperature
-40
85
°C
Min
Max
Unit
Table 10: Operating Conditions
Symbol
CL
Parameter
Load Capacitance
30
Input Rise and Fall Times
pF
5
ns
Input Pulse Voltage
0.2VCC to 0.8 VCC
V
Input and Output Timing Reference Voltage
0.3VCC to 0.7 VCC
V
Note: Output Hi-Z is defined as the point where data out is no longer driven.
Table 11: AC Measurement Conditions
This specification is subject to change without further notice. (11.08.2004 V1.0)
Page 20 of 30
EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
0.8VCC
0.7VCC
0.3VCC
0.2VCC
Figure 5: AC Measurement I/O Waveform
Symbol
Parameter
VOUT
Output Capacitance (Q)
CIN
Input
Test Condition
Min
Max
Unit
VOUT=0V
8
pF
VIN=0V
6
pF
Max
Unit
Note: Sampled only, not 100% tested, at TA=25°C and a frequency of 20MHz.
Table 12: Capacitance
Symbol
Parameter
Test Condition
(in addition to those in Table 10)
Min
ILI
Input Leakage Current
±2
µA
ILO
Output Leakage Current
±2
µA
ICC1
Standby Current
S#=VCC, VIN=VSS or VCC
50
µA
ICC2
Deep Power-down Current
S#=VCC, VIN=VSS or VCC
5
µA
ICC3
Operating Current (Read)
C=0.1 VCC/0.9 VCC at 25MHz,
Q=open
4
mA
ICC4
Operating Current (PP)
S#=VCC
15
mA
ICC5
Operating Current (WRSR)
S#=VCC
15
mA
ICC6
Operating Current (BE)
S#=VCC
15
mA
ICC7
Operating Current (CE)
S#=VCC
15
mA
VIL
Input Low Voltage
-0.5
0.3 VCC
V
VIH
Input High Voltage
0.7VCC
VCC+0.4
V
VOL
Output Low Voltage
IOL=1.6mA
0.4
V
VOH
Output High Voltage
IOH=-100µA
VCC-0.2
V
Table 13: DC Characteristics
This specification is subject to change without further notice. (11.08.2004 V1.0)
Page 21 of 30
EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
Test Conditions Specified in Table 10 and Table 11
Symbol
fC
Alt.
fC
fR
Parameter
Min
Clock frequency for the following instructions:
FAST_READ, PP, SE, BE, DP, RES, RDID,
WREN, WRDI, RDSR, WRSR
Clock frequency for READ instructions
Type
Max
Unit
D.C.
33
MHZ
D.C.
20
MHZ
tCH1
tCLH
Clock High Time
18
ns
1
tCLL
Clock Low Time
18
ns
Clock Slew Rate (peak to peak)
0.1
V/ns
S# Active Setup Time (relative to C)
10
ns
S# Not Active Hold Time (relative to C)
10
ns
tCL
2
tSLCH
tCSS
tCHSL
tDVCH
tDSU
Data in Setup Time
5
ns
tCHDX
tDH
Data in Hold Time
5
ns
tCHSH
S# Active Hold Time (relative to C)
10
ns
tSHCH
S# Not Active Setup Time (relative to C)
10
ns
100
ns
tSHSL
tCSH
S# Deselect Time
tSHQZ2
tDIS
Output Disable Time
15
ns
tCLQV
tV
Clock Low to Output Valid
15
ns
tCLQX
tHO
Output Hold Time
0
ns
tHLCH
Hold# Setup Time (relative to C)
10
ns
tCHHH
Hold# Hold Time (relative to C)
10
ns
tHHCH
Hold Setup Time (relative to C)
10
ns
tCHHL
Hold Hold Time ((relative to C)
10
ns
tHHQX2
tLZ
Hold to Output Low-Z
15
ns
tHLQZ2
tHZ
Hold# to Output High-Z
20
ns
S# High to Deep Power-down Mode
3
µs
S# High to Standby Mode without Electronic
Signature Read
3
µs
1.8
µs
tDP
2
tRES12
tRES2
2
S# High to Standby Mode with Electronic
Signature Read
tW
Write Status Register Cycle Time
3
15
ms
tPP
Page Program Cycle Time
2
5
ms
tBE
Block Erase Cycle Time
40
60
ms
tCE
Chip Erase Cycle Time
40
60
ms
Table 14: AC Characteristics
This specification is subject to change without further notice. (11.08.2004 V1.0)
Page 22 of 30
EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
Instruction and Sequence Timing Diagrams
tSHSL
S#
tSHCH
tCHSL
tCHSH
tSLCH
C
tCHDX
tDVCH
MSB IN
D
tCHCL
tCLCH
LSB IN
High Impedance
Q
Figure 6: Serial Input Timing
S#
tC H H L
tH L C H
tH H C H
C
tH L Q Z
tC H H H
tH H Q X
Q
D
H O LD #
Figure 7: Hold Timing
S#
tC H
C
tC L Q V
tC L Q V
tC L Q X
tC L Q X
tS H Q Z
tC L
Q
LSB O U T
tQ L Q H
tQ H Q L
D
A D D R L S B IN
Figure 8: Output Timing
This specification is subject to change without further notice. (11.08.2004 V1.0)
Page 23 of 30
EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
C
Hold#
Hold Condition
Hold Condition
Figure 9: Hold Condition Activation
S#
0
1
2
3
4
5
6
7
C
Instruction
D
High Impedance
Q
Figure 10: Write Enable (WREN) Sequence
S#
0
1
2
3
4
5
6
7
C
Ins truction
D
H igh Im pedance
Q
Figure 11: Write Disable (WRDI) Sequence
This specification is subject to change without further notice. (11.08.2004 V1.0)
Page 24 of 30
EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
S#
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
C
Instruction
Q
Status Register Out
Status Register Out
D
High Impedance
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7
MSB
MSB
Figure 12: Read Status Register (RDSR) Sequence
S#
0
1
2
3
4
5
6
8
7
9 10 11 12 13 14 15
C
Satus Register In
Instruction
D
Q
6
7
5
4
3
2
1
0
MSB
High Impedance
Figure 13: Write Status Register (WRSR) Sequence
S#
0 1 2 3 4 5 6 7 8 9 10
28 29 30 31 32 33 34 35 36 37 38 39
C
24-Bit Address
Instruction
D
23 22 21
High Impedance
3 2 1 0
MSB
Q
Data Out 1
Data Out 2
7 6 5 4 3 2 1 0 7
MSB
Figure 14: Read Data Bytes (READ) Sequence
This specification is subject to change without further notice. (11.08.2004 V1.0)
Page 25 of 30
EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
S#
0
1
2
3
4
5
6
7
8
28 29 30 31
9 10
C
Instruction
24-Bit Address
D
23 22 21
0
1
High Impedance
Q
S#
2
3
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
C
Dummy Byte
D
7
6
5
4
3
2
1
0
Data Out 1
7
Q
6
5
4
3
Data Out 2
1
2
7
0
6
5
4
3
1
2
0
MSB
MSB
7
MSB
Figure 15: Read Data Bytes at Higher Speed (Fast-Read) Sequence
S#
0
1
2
3
4
5
6
7
8
9 10
29 30 31 32 33 34 35 36 37 38 39
28
C
24-Bit Address
23 22 21
2
3
7
0
1
MSB
6
5
4
3
2
1
0
2708
2709
2707
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
2706
S#
2705
MSB
2702
D
Data Byte 1
2703
2704
Instruction
1
0
C
Data Byte 2
D
7
MSB
6
5
4
3
Data Byte 3
2
1
0
7
6
5
4
3
2
Data Byte 256
1
MSB
0
7
6
5
4
3
2
MSB
Figure 16. Page Program (PP) Sequence
This specification is subject to change without further notice. (11.08.2004 V1.0)
Page 26 of 30
EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
S#
1
0
2
3
4
5
6
7
8
29 30 31
9
C
24-Bit Address
Instruction
D
23 22
2
0
1
Figure 17: Block Erase Sequence
S#
0
1
2
3
4
5
6
7
C
Instruction
D
Figure 18: Chip Erase Sequence
S#
tDP
1
0
2
3
4
5
6
7
C
Instruction
D
Stand-by Mode Deep Power-down Mode
Figure 19: Deep Power-Dow-n Sequence
S#
0
1
2
3
4
5
6
7
8
9 10
37 38
28 29 30 31 32 33 34 35 36
C
D
23 22 21
High Impedance
Q
tRES2
3 Dummy Bytes
Instruction
3
2
1
0
MSB
Device ID
7
6
5
4
3
2
1
0
MSB
Deep Power-down Mode
Stand-by Mode
Figure 20: Release from Deep Power-down (RES) and Read Device ID Sequence
This specification is subject to change without further notice. (11.08.2004 V1.0)
Page 27 of 30
EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
S#
tRES1
0
1
2
3
4
5
6
7
C
Instruction
D
High Impedance
Q
Deep Power-down Mode
Stand-by Mode
Figure 21: Release from Deep Power-down (RES) Sequence
S#
0 1 2 3 4 5 6 7 8 9 10
28
29 30 31 32 33 34 35 36 37 38
C
Instruction
D
24-Bit Address
23 22 21
3 2 1 0 7 6 5 4 3 2 1 0
MSB
Manufacturer ID (7Fh)
Q
MSB
S#
39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63
C
D
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Manufacturer ID (7Fh)
Device ID (05h)
Manufacturer ID (1Fh)
Q
MSB
MSB
MSB
Figure 22: Read Manufacturer and Device ID (RDID) Sequence
This specification is subject to change without further notice. (11.08.2004 V1.0)
Page 28 of 30
EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
Appendix
ORDERING INFORMATION (Standard Products)
The order number is defined by a combination of the following elements.
EM25LV010 -33 M
S
Description
S = PB (Lead) free package
Package Type
M
= SO8 (150mm)
KGB = Known Good Dice (for wafer dice sell)
Operation Speed / Voltage
25 = 25MHz
33 = 33MHz
** = VDD = 2.7V~3.6V
**R = VDD = 3.0~3.6V
Device Number/Description
EM25LV010
1 Megabit (128K x 8 Bits) Serial Flash Memory
2.7 ~ 3.6 Volt only Read, Program and Erase
This specification is subject to change without further notice. (11.08.2004 V1.0)
Page 29 of 30
EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
ORDERING INFORMATION (Non-Standard Products)
For Known Good Dice (KGD), please contact ELAN Microelectronics at the following contact
information or its representatives.
ELAN
MICROELECTRONICS
CORPORATION
Headquarters:
Hong Kong:
USA:
No. 12, Innovation Road 1
Science-based Industrial Park
Hsinchu, Taiwan, R.O.C. 30077
Tel: +886 3 563-9977
Fax: +886 3 563-9966
http://www.emc.com.tw
Elan (HK) Microelectronics
Corporation, Ltd.
Elan Information Technology
Group
Rm. 1005B, 10/F Empire Centre
68 Mody Road, Tsimshatsui
Kowloon , HONG KONG
Tel: +852 2723-3376
Fax: +852 2723-7780
[email protected]
1821 Saratoga Ave., Suite 250
Saratoga, CA 95070
USA
Tel: +1 408 366-8223
Fax: +1 408 366-8220
Europe:
Shenzhen:
Shanghai:
Elan Microelectronics Corp.
(Europe)
Elan Microelectronics
Shenzhen, Ltd.
Elan Microelectronics
Shanghai Corporation, Ltd.
Siewerdtstrasse 105
8050 Zurich, SWITZERLAND
Tel: +41 43 299-4060
Fax: +41 43 299-4079
http://www.elan-europe.com
SSMEC Bldg., 3F, Gaoxin S. Ave.
Shenzhen Hi-Tech Industrial Park
Shenzhen, Guandong, CHINA
Tel: +86 755 2601-0565
Fax: +86 755 2601-0500
23/Bldg. #115 Lane 572, Bibo Road
Zhangjiang Hi-Tech Park
Shanghai, CHINA
Tel: +86 021 5080-3866
Fax: +86 021 5080-4600
This specification is subject to change without further notice. (11.08.2004 V1.0)
Page 30 of 30