64MB/128MB/256MB/512MB MultiMediaCardTM Description Features ESMMC64 / ESMMC128 / Operating Voltage: 2.7V ~ 3.6V ESMMC256 / ESMMC512 are 64MB Password data access protection TM up to 512MB MultiMediaCard . These Small erase block size of 512 bytes, are the highly integrated flash memory tagged erase supported. with serial and random accessible via a Read dedicated serial interface optimized for fast between 1 and 2048 bytes and reliable data transmission. They are Damage free powered card insertion fully compatible to a new consumer and removal standard, called the MultiMediaCard system standard MultiMediaCard TM defined in TM The MultiMediaCard size programmable 4KV ESD protection the Read speed system specification. TM block Sustained: 13.7Mbits/s system is a new Burst(one block): 20Mbit/s mass-storage system based on innovations Write speed in semiconductor technology. It has been Sustained: 2.8Mbits/s designed to provide an inexpensive, Burst(one block): 20Mbit/s mechanically robust storage medium in Up to 10 stacked card (at 20MHz, card form for multimedia consumer Vcc = 2.7V to 3.6V) applications and mobile devices (handheld Access time: 300µs PCs, digital cameras, MP3 players, etc.) to Low power dissipation store, copy, and move information like a small hard drive. Pin Definition Eorex Corporation www.eorex.com 1/8 Pin No. Name Type Description 1 RSV NC No connection 2 CMD I/O/PP/OD Command/Response 3 VSS1 S Ground 4 VCC S Power Supply 5 CLK I Clock 6 VSS2 S Ground 7 DAT I/O/PP Data 64MB/128MB/256MB/512MB MultiMediaCardTM Physical Outline Front Back Eorex Corporation www.eorex.com 2/8 64MB/128MB/256MB/512MB MultiMediaCardTM Architecture Eorex Corporation www.eorex.com 3/8 64MB/128MB/256MB/512MB MultiMediaCardTM Temperature Characteristic Parameter Min Max Storage temperature -40 85 Unit ℃ Operating temperature -25 85 ℃ Junction temperature -20 95 ℃ Electrical Characteristics 1. Absolute Maximum Ratings Parameter Supply voltage Symbol Min Max Unit Vcc -0.5 4.6 V 0.2 W -4 4 KV Total power dissipation ESD protection Remark Human body model Input voltage VImax -0.5 Vcc+0.5 V ≦max(Vcc) Output voltage VOmax -0.5 Vcc+0.5 V ≦max(Vcc) High-level output current VOHmax -100 Low-level output current IOHmax 150 mA Short cut protected mA Short cut protected 2. Bus Signal Line Load The total capacitance CL of each line of the MultiMediaCard TM bus is the sum of the bus master capacitance CHOST, the bus capacitance CBUS itself and the capacitance CCARD of each card connected to this line: CL = CHOST + CBUS + N*CCARD Where N is the number of connected cards. Requiring the sum of the host and bus capacitance’s not to exceed 30pF for up to 10 cards, and 40pF up to 30 cards, the following values must not be exceeded: Parameter Symbol Min Max Unit Remark Pull-up resistance for CMD RCMD 4.7 100 KΩ To prevent bus floating Pull-up resistance for DAT RDAT 50 100 KΩ To prevent bus floating Bus signal line capacitance CL 250 pF fpp≦5MHz, 30 cards Bus signal line capacitance CL 100 pF fpp≦20MHz, 10 cards CCARD 7 pF 16 nH Signal card capacitance Maximum signal line inductance Eorex Corporation www.eorex.com 4/8 fpp≦20MHz 64MB/128MB/256MB/512MB MultiMediaCardTM 3. Recommend Operating Conditions Parameter Symbol Min Typ Max Unit Supply voltage VCC 2.7 3.0 3.6 V Inputs Low-level input current VIL VSS-0.3 0.25VCC V High-level input current VIH 0.625VCC VCC+0.3 V High-level output current IOH -2 Low-level output current IOL Clock frequency data fpp Outputs Clock Remark mA 6 mA 0 20 MHz fOD 0 400 KHz Clock cycle time data Tpp = 50 ns transfer mode (pp) 1/fpp Clock cycle time ident. tOD = 2.5 µs Mode (od) 1/fOD CL<100pF,(10 cards) transfer mode (pp) Input clk Clock frequency ident. Mode (od) Clock low time tWL 10 ns CL<100pF,(10 cards) Clock high time tWH 10 ns CL<100pF,(10 cards) Clock input rise time tLH 10 ns CL<100pF,(10 cards) Clock input fall time tHL 10 ns CL<100pF,(10 cards) Clock low time tWL 50 ns CL<250pF,(30 cards) Clock high time tWH 50 mA CL<250pF,(30 cards) Clock input rise time tLH 50 mA CL<250pF,(30 cards) Clock input fall time tHL 50 MHz CL<250pF,(30 cards) 4. Recommend Bus Conditions Parameter Symbol Min Typ Max Unit Remark Clock Pull-up resistance for CMD RCMD 4.7 100 KΩ To prevent bus floating Input clk Pull-up resistance for DAT RDAT 50 100 KΩ To prevent bus floating Bus signal line capacitance CL 250 pF fpp≦5MHz, 30 cards 100 pF fpp≦20MHz, 10 cards 16 nH fpp≦20MHz Maximum signal line inductance Eorex Corporation www.eorex.com 5/8 64MB/128MB/256MB/512MB MultiMediaCardTM 5. Operating Characteristics Parameter Symbol Min Typ Max Unit Remark High speed supply current 45 mA At 20MHz, 3.6V Minimal supply current 150 µA At 0Hz, standby state All digital inputs Input leakage (including I/O current -10 10 µA current) All outputs High-level output VOH 0.75VCC V At min IOH V At max IOL voltage Low-level output VOL 0.125VCC voltage Inputs: CMD, Input set-up time tISU DAT(Referred to CLK), DI(Referred to 3 ns 3 Input hold time VOL ns Outputs: CMD, Output set-up tOSU 5 ns DAT(Referred to time CLK), DO(Referred Output hold time tOH 5 ns SCLK), CS to SCLK) Eorex Corporation www.eorex.com 6/8 At tLH = 10ns 3.6V 64MB/128MB/256MB/512MB MultiMediaCardTM Timing Diagram of Data Input and Output The access time (tAT) is divided into two parts: TSAD: The synchronous access time. This time defines the time of the maximum number of cycles which are required to access a byte of the memory field. TAAD: The synchronous access time to read a byte out of the memory field. The synchronous part of the access time is sum of the command frame length and some additional internal cycles (NSAD = 16 cycles). At 20MHz one cycle is 50ns (1/fCLK), multiplied with NSAD the resulting frame time is TSAD = 0.8µs. The asynchronous access delay TAAD = 600µs maximum. The resulting memory access time tAT is the sum of both parts: tAT = TSAD + TAAD with TSAD = NSAD/ fCLK Eorex Corporation www.eorex.com 7/8 64MB/128MB/256MB/512MB MultiMediaCardTM Access Time Parameter Symbol Synchronous access delay cycles Max Unit NSAD 16 cycles Synchronous access delay TSAD 0.8 µs Asynchronous access delay TAAD 600 µs TAT 600.8 µs Memory access time Typ Remark At 20MHz clock frequency At 20MHz clock frequency Above technical information is based on industry standard data and tested to reliable. However, Transcend makes no warranty, either expressed or implied, as to its accuracy and assumes no liability in connection with the use of this product. Transcend reserves the tight to make changes in specifications at any time without prior notice. Eorex Corporation www.eorex.com 8/8