Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. 6 5 BC846BDW1T1 BC847BDW1T1 BC847CDW1T1 BC848BDW1T1 BC848CDW1T1 4 6 Q2 5 See Table Q1 4 1 1 2 2 3 3 SOT-363 /SC-88 CASE 419B STYLE1 MAXIMUM RATINGS Rating Symbol BC846 BC847 BC848 Unit Collector–Emitter Voltage V CEO 65 45 30 V Collector–Base Voltage V CBO 80 50 30 V Emitter–Base Voltage V 6.0 6.0 5.0 V 100 100 100 mAdc Collector Current -Continuous EBO IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per Device FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 380 250 mW mW 3.0 328 –55 to +150 mW/°C °C/W °C R θJA T J , T stg 1. FR–5 = 1.0 x 0.75 x 0.062 in. ORDERING INFORMATION Device Package Shipping BC846BDW1T1 BC847BDW1T1 BC847CDW1T1 BC848BDW1T1 BC848CDW1T1 SOT–363 SOT–363 SOT–363 SOT–363 SOT–363 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel BC846b–1/5 BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 65 45 30 — — — — — — 80 50 30 — — — — — — 80 50 30 — — — — — — 6.0 6.0 5.0 — — — — — — — — — — 15 5.0 — — 150 270 — — 200 420 — — — — 580 — 290 520 — — 0.7 0.9 660 — 450 800 0.25 0.6 — — 700 770 fT 100 — — MHz C obo NF — — 4.5 pF dB — — — — 10 4.0 OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 10 mA) BC846 Series BC847 Series BC848 Series Collector–Emitter Breakdown Voltage (I C = 10 µA, V EB = 0) BC846 Series BC847 Series BC848 Series Collector–Base Breakdown Voltage (I C = 10 µA) BC846 Series BC847 Series BC848 Series Emitter–Base Breakdown Voltage (I E = 1.0 µA) BC846 Series Collector Cutoff Current BC847 Series BC848 Series (V CB = 30 V) (V CB = 30 V, T A = 150°C) V V (BR)CEO V (BR)CES V V V (BR)CBO V (BR)EBO I CBO V nA µA ON CHARACTERISTICS DC Current Gain (I C = 10 µA, V CE = 5.0 V) h FE BC846B, BC847B, BC848B BC847C, BC848C (I C = 2.0 mA, V CE = 5.0 V) BC846B, BC847B, BC848B BC847C, BC848C Collector–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) V CE(sat) Collector–Emitter Saturation Voltage ( I C = 100 mA, I B = 5.0 mA) Base–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) V BE(sat) Base–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA) Base–Emitter Voltage (I C = 2.0 mA, V CE = 5.0 V) V BE(on) Base–Emitter Voltage (I C = 10 mA, V CE = 5.0 V) — V V mV SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (I C = 10 mA, V CE = 5.0 Vdc, f = 100 MHz) Output Capacitance (V CB = 10 V, f = 1.0 MHz) Noise Figure (I C = 0.2 mA, V CE = 5.0 V dc, R S = 2.0 kΩ, BC846B, BC847B, BC848B f = 1.0 kHz, BW = 200 Hz) BC847C, BC848C BC846b–2/5 BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1 TYPICAL CHARACTERISTICS 1.0 0.9 1.5 0.8 1.0 0.7 V,VOLTAGE (VOLTS) h FE , NORMALIZED DC CURRENT GAIN 2.0 0.8 0.6 0.4 0.5 0.4 0.3 0.2 0.3 0.1 0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 200 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C , COLLECTOR CURRENT (mAdc) I C , COLLECTOR CURRENT (mAdc) Figure 2. “Saturation” and “On” Voltages 2.0 1.6 1.2 0.8 0.4 0 0.02 0.2 0.3 Figure 1. Normalized DC Current Gain θ vb, TEMPERATURE COEFFICIENT (mV/ ° C) 0.2 V CE, COLLECTOR-EMITTER VOLTAGE(V) 0.6 0.1 1.0 10 20 1.0 1.2 1.6 2.0 2.4 2.8 0.2 1.0 10 100 I B , BASE CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 3. Collector Saturation Region Figure 4. Base–Emitter Temperature Coefficient BC846b–3/5 BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1 10 C,CAPACITANCE(pF) 7.0 5.0 3.0 2.0 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 400 300 200 100 80 60 40 30 20 0.5 0.7 1.0 3.0 5.0 7.0 10 20 30 50 0.8 2.0 1.0 0.5 0.6 0.4 0.2 0.2 0.1 0.2 1.0 10 0 0.2 100 0.5 2.0 1.6 1.2 0.8 0.4 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 1.0 2.0 5.0 10 20 50 100 200 100 200 I C , COLLECTOR CURRENT (mA) Figure 8. “On” Voltage 10 I B , BASE CURRENT (mA) Figure 9. Collector Saturation Region 20 θ VB , TEMPERATURE COEFFICIENT (mV/ ° C) I C , COLLECTOR CURRENT (mA) Figure 7. DC Current Gain V CE , COLLECTOR-EMITTER VOLTAGE(VOLTS) 2.0 I C , COLLECTOR CURRENT (mAdc) Figure 6. Current–Gain – Bandwidth Product 1.0 V, VOLTAGE (VOLTS) h FE , DC CURRENT GAIN (NORMALIZED) V R , REVERSE VOLTAGE (VOLTS) Figure 5. Capacitances T f , CURREN-GAIN-BANDWIDTH PRODUCT (MHz) TYPICAL CHARACTERISTICS -1.0 -1.4 -1.8 -2.2 -2.6 -3.0 0.2 0.5 1.0 2.0 5.0 10 20 50 I C , COLLECTOR CURRENT (mA) Figure 10. Base–Emitter Temperature Coefficient BC846b–4/5 BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1 1.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 Z θJA (t) = r(t) R θJA R θJA = 328°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) – T C = P (pk) R θJC (t) P (pk) t1 0.01 t2 DUTY CYCLE, D = t 1 /t 2 SINGLE PULSE 0.001 0 1.0 10 100 1.0K 10K 100K 1.0M t, TIME (ms) Figure 11. Thermal Response I C , COLLECTOR CURRENT (mA) -200 The safe operating area curves indicate I C –V CE limits of thetransistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 12 is based upon T J(pk) = 150°C; T C or T A is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided T J(pk) < 150°C. T J (pk) may be calculated from the data in Figure 12. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. -100 -50 -10 -5.0 -2.0 -1.0 -5.0 -10 -30 -45 -65 -100 V CE , COLLECTOR–EMITTER VOLTAGE (V) Figure 12. Active Region Safe Operating Area BC846b–5/5