LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC85** DW1T1G S-LBC85** DW1T1G 6 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and 2 3 SOT-363 (3) (S-)LBC856ADW1T1G= 3A (S-)LBC856BDW1T1G= 3B (S-)LBC857BDW1T1G= 3F (S-)LBC857CDW1T1G= 3G (S-)LBC858BDW1T1G= 3K (S-)LBC858CDW1T1G = 3L 4 1 Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. • Device Marking: 5 (2) Q1 Q2 (4) (5) (6) MAXIMUM RATINGS Symbol BC856 BC857 BC858 Unit Collector–Emitter Voltage VCEO –65 –45 –30 V Collector–Base Voltage VCBO –80 –50 –30 V Emitter–Base Voltage VEBO –5.0 –5.0 –5.0 V IC –100 –100 –100 mAdc Rating Collector Current – Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per Device FR–5 Board (Note 1.) TA = 25°C Derate Above 25°C DEVICE MARKING See Table Symbol Max Unit PD 380 250 mW 3.0 mW/°C Thermal Resistance, Junction to Ambient RJA 328 °C/W Junction and Storage Temperature Range TJ, Tstg –55 to +150 °C 1. FR–5 = 1.0 x 0.75 x 0.062 in ORDERING INFORMATION Device (1) Shipping LBC85*BDW1T1G 3000/Tape & Reel LBC85*BDW1T3G 10000/Tape & Reel Rev.O 1/6 LESHAN RADIO COMPANY, LTD. LBC856ADW1T1G,LBC856BDW1T1G,LBC857BDW1T1G LBC857CDW1T1G, LBC858BDW1T1G,LBC858CDW1T1G S-LBC856ADW1T1G,S-LBC856BDW1T1G,S-LBC857BDW1T1G S-LBC857CDW1T1G, S-LBC858BDW1T1G,S-LBC858CDW1T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max –65 –45 –30 – – – – – – –80 –50 –30 – – – – – – –80 –50 –30 – – – – – – –5.0 –5.0 –5.0 – – – – – – ICBO – – – – –15 –4.0 nA µA hFE – – – 90 150 270 – – – – 125 220 420 180 290 520 250 475 800 – – – – –0.3 –0.65 – – –0.7 –0.9 – – –0.6 – – – –0.75 –0.82 fT 100 – – MHz Output Capacitance (VCB = –10 V, f = 1.0 MHz) Cob – – 4.5 pF Noise Figure (IC = –0.2 mA, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) NF – – 10 dB Characteristic Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mA) Collector–Emitter Breakdown Voltage (IC = –10 µA, VEB = 0) Collector–Base Breakdown Voltage (IC = –10 A) Emitter–Base Breakdown Voltage (IE = –1.0 A) LBC856 Series LBC857 Series LBC858 Series V(BR)CEO V V(BR)CES LBC856 Series LBC857 Series LBC858 Series V V(BR)CBO LBC856 Series LBC857 Series LBC858 Series V V(BR)EBO LBC856 Series LBC857 Series LBC858 Series Collector Cutoff Current (VCB = –30 V) Collector Cutoff Current (VCB = –30 V, TA = 150°C) V ON CHARACTERISTICS DC Current Gain (IC = –10 µA, VCE = –5.0 V) LBC856A LBC856B, LBC857B, LBC858B LBC857C, LBC858C LBC856A LBC856B, LBC857B, LBC858B LBC857C, LBC858C Collector–Emitter Saturation Voltage (IC = –10 mA, IB = –0.5 mA) (IC = –100 mA, IB = –5.0 mA) (IC = –2.0 mA, VCE = –5.0 V) VCE(sat) Base–Emitter Saturation Voltage (IC = –10 mA, IB = –0.5 mA) (IC = –100 mA, IB = –5.0 mA) VBE(sat) Base–Emitter On Voltage (IC = –2.0 mA, VCE = –5.0 V) (IC = –10 mA, VCE = –5.0 V) VBE(on) V V V SMALL–SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product (IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz) Rev.O 2/6 LESHAN RADIO COMPANY, LTD. LBC856ADW1T1G,LBC856BDW1T1G,LBC857BDW1T1G LBC857CDW1T1G, LBC858BDW1T1G,LBC858CDW1T1G S-LBC856ADW1T1G,S-LBC856BDW1T1G,S-LBC857BDW1T1G S-LBC857CDW1T1G, S-LBC858BDW1T1G,S-LBC858CDW1T1G TYPICAL CHARACTERISTICS – LBC856 TJ = 25°C VCE = -5.0 V TA = 25°C -0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) -1.0 2.0 1.0 0.5 VBE(sat) @ IC/IB = 10 -0.6 VBE @ VCE = -5.0 V -0.4 -0.2 0.2 VCE(sat) @ IC/IB = 10 0 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (AMP) -0.1 -0.2 -0.5 -50 -100 -200 -5.0 -10 -20 -1.0 -2.0 IC, COLLECTOR CURRENT (mA) Figure 2. “On” Voltage -2.0 -1.6 -1.2 IC = -10 mA -20 mA -50 mA -100 mA -200 mA -0.8 -0.4 TJ = 25°C 0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 IB, BASE CURRENT (mA) -5.0 -10 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain -20 -1.0 -1.4 -1.8 -2.6 -3.0 -0.2 20 Cib 10 8.0 6.0 Cob 4.0 2.0 -0.1 -0.2 -0.5 -5.0 -10 -20 -1.0 -2.0 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitance -50 -100 -0.5 -1.0 -50 -5.0 -10 -20 -2.0 IC, COLLECTOR CURRENT (mA) -100 -200 Figure 4. Base–Emitter Temperature Coefficient f, T CURRENT-GAIN - BANDWIDTH PRODUCT C, CAPACITANCE (pF) TJ = 25°C -55°C to 125°C -2.2 Figure 3. Collector Saturation Region 40 θVB for VBE 500 VCE = -5.0 V 200 100 50 20 -100 -1.0 -10 IC, COLLECTOR CURRENT (mA) Figure 6. Current–Gain – Bandwidth Product Rev.O 3/6 LESHAN RADIO COMP ANY, LTD. LBC856ADW1T1G,LBC856BDW1T1G,LBC857BDW1T1G LBC857CDW1T1G, LBC858BDW1T1G,LBC858CDW1T1G S-LBC856ADW1T1G,S-LBC856BDW1T1G,S-LBC857BDW1T1G S-LBC857CDW1T1G, S-LBC858BDW1T1G,S-LBC858CDW1T1G TYPICAL CHARACTERISTICS – LBC857/LBC858 1.5 -1.0 TA = 25°C -0.9 VCE = -10 V TA = 25°C -0.8 1.0 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 0.7 0.5 -0.7 VBE(on) @ VCE = -10 V -0.6 -0.5 -0.4 -0.3 -0.2 0.3 VCE(sat) @ IC/IB = 10 -0.1 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 IC, COLLECTOR CURRENT (mAdc) 0 -0.1 -0.2 -100 -200 TA = 25°C -1.6 -1.2 IC = -10 mA IC = -50 mA IC = -200 mA IC = -100 mA IC = -20 mA -0.4 -0.02 -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 -10 -20 -0.1 -1.0 IB, BASE CURRENT (mA) -0.2 10 Cib 7.0 TA = 25°C 5.0 Cob 3.0 2.0 1.0 -0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 -10 -1.0 IC, COLLECTOR CURRENT (mA) -100 Figure 10. Base–Emitter Temperature Coefficient f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) Figure 9. Collector Saturation Region C, CAPACITANCE (pF) -100 -50 1.0 -2.0 0 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) Figure 8. “Saturation” and “On” Voltages θVB , TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (V) Figure 7. Normalized DC Current Gain -0.8 VBE(sat) @ IC/IB = 10 400 300 200 150 VCE = -10 V TA = 25°C 100 80 60 40 30 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 11. Capacitances Figure 12. Current–Gain – Bandwidth Product Rev.O 4/6 LESHAN RADIO COMPANY, LTD. LBC856ADW1T1G,LBC856BDW1T1G,LBC857BDW1T1G LBC857CDW1T1G, LBC858BDW1T1G,LBC858CDW1T1G S-LBC856ADW1T1G,S-LBC856BDW1T1G,S-LBC857BDW1T1G S-LBC857CDW1T1G, S-LBC858BDW1T1G,S-LBC858CDW1T1G r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 ZθJA(t) = r(t) RθJA RθJA = 328°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RθJC(t) P(pk) t1 0.01 t2 DUTY CYCLE, D = t1/t2 0.001 SINGLE PULSE 0 1.0 10 100 1.0k 10k 100k 1.0M t, TIME (ms) Figure 13. Thermal Response -200 1s IC, COLLECTOR CURRENT (mA) -100 -50 -10 -5.0 -2.0 -1.0 TA = 25°C 3 ms TJ = 25°C BC558 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT The safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. -5.0 -10 -30 -45 -65 -100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 14. Active Region Safe Operating Area Rev.O 5/6 LESHAN RADIO COMPANY, LTD. LBC856ADW1T1G,LBC856BDW1T1G,LBC857BDW1T1G LBC857CDW1T1G, LBC858BDW1T1G,LBC858CDW1T1G S-LBC856ADW1T1G,S-LBC856BDW1T1G,S-LBC857BDW1T1G S-LBC857CDW1T1G, S-LBC858BDW1T1G,S-LBC858CDW1T1G SC-88/SOT-363 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A G DIM 6 5 4 S -B1 2 3 D6PL 0.2 (0.008) M B M N J A B C D G H J K N S INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.012 0.004 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0 .20 REF 2.00 2.20 C K H PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4.EMITTER 1 5. BASE 1 6.COLLECTOR 2 0.4 mm (min) 0.65 mm 0.65 mm 0.5 mm (min) 1.9 mm Rev.O 6/6