Silicon Tuning Diode MMBV409LT1 MV409 This device is designed in the surface Mount package for general frequency control and tuning applications.It provides solid-state reliability in replacement of mechanical tuning methods. • High Q with Guaranteed Minimum Values at VHF Frequencies • Controlled and Uniform Tuning Ratio • Available in Surface Mount Package VOLTAGE VARIABLE CAPACITANCE DIODES 3 1 ANODE 3 CATHODE 1 2 CASE 318–08, STYLE 8 SOT– 23 (TO–236AB) MAXIMUM RATINGS(EACH DIODE) Rating Reverse Voltage Forward Current Device Dissipation @T A = 25°C Derate above 25°C Junction Temperature Storage Temperature Range Symbol VR IF PD M B V 4 0 9 MMBV409LT1 Unit 20 20 Vdc 200 200 mAdc 280 225 mW 2.8 1.8 mW/°C +125 °C –55 to +150 °C TJ T stg DEVICE MARKING MMBV409LT1=X5,MV409=MV409 ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR=10µAdc) Reverse Voltage Leakage Current (V R=15Vdc) Diode Capacitance Temperature Coefficient Device Type Symbol Min Typ Max Unit V (BR)R 20 — — Vdc — — 0.1 µAdc — 300 — ppm/°C I R T CC C T Diode Capacitance V R =3.0Vdc,f=1.0MHz pF MMBV409LT1,MV409 Q,Figure of Merit C R ,Capacitance Ratio C 3/ C 8 V R =3.0Vdc f=1.0MHz(1) f=50MHz Min Nom Max Min Min Max 26 29 32 200 1.5 1.9 1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 8 vdc I2–1/2 MMBV409LT1 MV409 TYPICAL CHARACTERISTICS 1000 C T , DIODE CAPACITANCE (pF) 40 Q , FIGURE OF MERIT 32 f = 1.0MHz TA = 25°C 24 16 8 2 3 10 20 30 100 1000 V R , REVERSE VOLTAGE (VOLTS) f , FREQUENCY ( MHz ) Figure 1. Diode Capacitance Figure 2. Figure of Merit 100 60 20 10 6.0 V R= 15Vdc 2.0 1.0 0.6 0.2 0.1 0.06 0.02 0.01 0.006 0.002 0.001 –60 10 100 CT,DIODECAPACITANCE(NORMALIZED) , REVERSE CURRENT ( nA ) 1 R 100 10 0 I V R =3Vdc T A = 25°C –40 –20 0 +20 +40 +60 +80 +100 +120 +140 1.04 V R= 3.0Vdc f = 1.0MHz 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 –75 –50 –25 0 +25 +50 +75 +100 T A , AMBIENT TEMPERATURE (°C) T A , AMBIENT TEMPERATURE (°C) Figure 3. Leakage Current Figure 4. Diode Capacitance +125 I2–2/2