MCC 2N7002V

MCC
omponents
20736 Marilla Street Chatsworth
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2N7002V
Features
•
•
•
•
•
Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
N-Channel MOSFET
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
VDSS
VDGR
VGSS
ID
PD
RθJA
TJ
TSTG
Rating
Drain-source Voltage
Drain-Gate Voltage
Gate-source Voltage
Drain Current
Total Power Dissipation
Thermal Resistance Junction to Ambient
Operating Junction Temperature
Storage Temperature
Rating
60
60
±20
280
150
833
-55 to +150
-55 to +150
Unit
V
V
V
mA
mW
℃/W
℃
℃
SOT-563
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
V(BR)DSS
Vth(GS)
IGSS
IDSS
ID(ON)
rDS(on)
gFS
Ciss
COSS
CrSS
Parameter
Drain-Source Breakdown Voltage*
(VGS=0Vdc, ID=10µAdc)
Gate-Threshold Voltage*
(VDS=VGS, ID=250µAdc)
Gate-body Leakage*
(VDS =0Vdc, VGS =±20Vdc)
Zero Gate Voltage Drain Current*
(VDS =60Vdc, VGS =0Vdc)
(VDS =0Vdc, VGS =±20Vdc, Tj=125℃)
On-state Drain Current*
(VDS =7.5Vdc, VGS =10Vdc)
Drain-Source On-Resistance*
(VGS=5Vdc, ID=50mAdc)
(VGS=10Vdc, ID=500mAdc)
Forward Tran Conductance*
(VDS=10Vdc, ID=200mAdc)
Input Capacitance
VDS=25Vdc,
Output Capacitance
VGS =0Vdc
Reverse Transfer
f=1MHz
Capacitance
Min
Typ
Max
Units
60
70
---
Vdc
1.0
---
2.5
Vdc
---
---
±0.1
µAdc
-----
-----
1
500
µAdc
0.5
1.0
---
DIMENSIONS
INCHES
Adc
-----
-----
3.0
2.0
Ω
80
---
---
ms
-----
-----
50
25
---
---
5
---
---
20
---
---
20
pF
DIM
A
B
C
D
G
H
K
L
M
MIN
.006
.043
.061
MM
MAX
.011
.049
.067
MIN
0.15
1.10
1.55
.043
.067
.023
.011
.007
0.90
1.50
0.56
0.10
0.10
.020
.035
.059
.022
.004
.004
MAX
0.30
1.25
1.70
NOTE
0.50
1.10
1.70
0.60
0.30
0.18
Switching
VDD=30Vdc,
VGEN=10Vdc
RL=150Ω,ID=200mA,
td(off)
Turn-off Time
RG=25Ω
* Pulse test, pulse width≦300μs, duty cycle≦20%
td(on)
Turn-on Time
Revision: 1
ns
www.mccsemi.com
2005/01/25
2N7002V
MCC
Marking: KAS
Revision: 1
www.mccsemi.com
2005/01/25