FPD5W1KX Avalanche Photodiode FEATURES • • • • • • • • Data rates up to 2.5Gb/s Operating temperature: -40°c to 85°C Photosensitive diameter: 30µm High cut-off frequency: 3.0GHz at M=5 and 10 Large gain-bandwidth product: 40GHz Low dark current: 20nA Low multipled dark current: 3nA Low excess noise factor: 5 at M=10 APPLICATIONS • 2.4 Gb/s optical transmission systems DESCRIPTION The FPD5W1KX is a wide bandwidth, high sensitivity avalanche photodiode (APD) optimized for operation at 1550nm. This APD is designed for use in optical transmission systems operating at a giga-bit-rate, above 2.4Gb/s, and for long transmission distances. The APD chip has a photosensitive area diameter of 30µm. Fujitsu’s advanced InP material technology realizes a high reliability planar structure device with wide bandwidth (large gain-bandwidth product) as well as low noise characteristics. A single-mode fiber is aligned to a hermetically sealed APD through a highly stable optical coupling system. ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) Ratings Parameter Symbol Min. Max. Unit Storage Temperature Tstg -40 +85 °C Operating Temperature Top -40 +85 °C APD Reverse Current IR 0 3(peak) mA APD Forward Current IF - 10 mA APD Reverse Voltage VR - VB V Note: Since VB may vary from device-to-device, VB data is attached to each device for reference. Edition 1.1 July 2004 1 FPD5W1KX Avalanche Photodiode OPTICAL & ELECTRICAL CHARACTERISTICS (Ta=-40°C to +85°C, λ=1,310/1,550nm, unless otherwise specified) Parameter APD Responsivity Symbol Test Conditions R λ = 1,310nm, M=1, 25°C λ = 1,550nm, M=1, 25°C λ = 1,310/1,550nm, M=1, -40 ~ +85°C λ = 1,610nm, M=1, 25°C Min. 0.8 0.8 Limits Typ. 0.85 0.92 Max. - 0.75 - - - 0.7 - Unit A/W APD Breakdown Voltage VB ID = 10µA, 25°C 40 50 60 V Temperature Coefficient of VB Γ Note (1) 0.08 0.12 0.15 V/°C 25°C - 15 40 70°C - - 800 85°C - - 1700 25°C - 1.5 10 70°C - - 160 85°C - - 340 4 6.3 - (0.6) (0.8) M=3 2.0 3.0 - GHz M=5, 10 2.5 3.0 - GHz M=20 1.5 3.0 - GHz Dark Current Mulitiplied Dark Current Excess Noise Factor Cut-off Frequency Capacitance Optical Return Loss Maximum Multiplication Factor ID IDM VR=0.9 x VB M=1 F (x) M=10, f=30MHz, B=1MHz, Ipo=2µA fc RL=50Ω, -3dB from 500kHz nA nA Ct f=1MHz, VR=0.9 X VB - 0.55 0.7 pF ORL - 30 - - dB Mmax Ipo=2µA 30 40 - Note 1: Γ=∆VB/dTc 2 FPD5W1KX Avalanche Photodiode Fig. 1 Responsivity vs. Wavelength Fig. 2 Responsivity vs. Temperature 1.0 1.0 Responsivity, (A/W) Responsivity, (A/W) 0.8 Pin=2µW, M=1 -40°C +25°C +85°C 0.6 Pin=2µW, M=1 1310nm 1480nm 1550nm 1600nm 1620nm 0.4 0.2 0.1 1300 1350 1400 1450 1500 1550 1600 1650 0.0 -50 0 50 100 Wavelength, λ (nm) Temperature, Ta (°C) Fig. 3 Dark Current vs. Reverse Voltage Fig. 5 Multiplication Characteristics 10-4 100 λ=1550nm, Pin=2µW 25°C 10-5 0°C Multiplication Factor, M Dark Current, ID (A) 10-6 85°C 10-7 65°C 45°C 10-8 25°C 10-9 -25°C 0°C -25°C 10 -40°C 45°C 65°C 85°C 1 -40°C 10-10 10-11 10-12 0 10 20 30 40 50 0.1 60 Reverse Voltage, VR (V) 0 10 20 30 40 50 Reverse Voltage, VR (V) 3 60 FPD5W1KX Avalanche Photodiode Fig. 6 Multiplication Factor vs. Photocurrent Fig. 7A Frequency Response (Air Gap ~ 2mm) 1000 Ta=25°C, λ = 1,550nm PCB Ta = 25°C, λ = 1,550nm, Pin=2µW, AC coupled, RL = 50Ω 100 Mmax 0.98VB 0.95VB 10 0.9VB 1 0.1 1 10 100 M=15 M=20 Relative Response (dB/div.) Multiplication Factor, M (Air Gap ~ 2mm) M=10 M=5 M=3 M=2 Photocurrent at M=1, Ipo (µA) 0 1 2 3 Frequency (GHz) Fig. 7B Frequency Response (Air Gap ~ 0mm) PCB Fig. 8 Cutoff Frequency vs. Multiplication Factor (Air Gap ~ 0mm) Ta = 25°C, λ = 1,550nm, Pin=2µW, AC coupled, RL = 50Ω M=20 M=15 Multiplication Factor, M Relative Response (dB/div.) 100 M=10 M=5 M=3 M=2 0 1 2 3 4 5 6 Ta = 25°C, λ = 1,550nm, Pin=2µW, AC coupled, RL = 50Ω 10 Air Gap=0mm Air Gap=2mm 1 0.1 0.1 1 10 Photocurrent at M=1, Ipo (µA) Frequency (GHz) 4 100 FPD5W1KX Avalanche Photodiode Fig. 9 Temperature Coefficient vs. Breakdown Voltage Fig. 10 Excess Noise Factor vs. Multiplication Factor Excess Noise Factor, F 50 γ (%/°C) 0.2 Γ (V/°C) 0.1 0 40 Ta = 25°C, λ = 1,550nm, I = 2µA, 20 po f = 30 MHz, B = 1 MHz 10 5 2 45 50 55 60 0 Breakdown Voltage, VB (V) 5 10 5 Ta = 25°C f = 1MHz 1 0.5 0.1 1 50 Multiplication Factor, M Fig. 11 Capacitance vs. Reverse Voltage Capacitance, Ct (pF) Temperature Coeffcient of VB 0.3 5 10 Reverse Voltage, VR (V) 5 50 100 100 FPD5W1KX Avalanche Photodiode “KX” PACKAGE 2 - R 1.25 17.0 7.4 ø2.54 17.0 12.7 2 - C1.5 ø0.9 2 ø6.0 MAX. UNIT: mm 1 2.0 3 3.7 3-ø0.35 10 MIN. 4 28 MAX. 1000 MIN. 7.4 1 2 ANODE CATHODE 3 CASE For further information please contact: CAUTION Eudyna Devices USA Inc. Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com • Do not put this product into the mouth. Eudyna Devices Europe Ltd. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 6