Driver Integrated 10Gb/s MI-DFB LD Module FTM1141GF FEATURES • Driver integrated 10Gb/s MI-DFB module for 800ps/nm optical transmission • MI-DFB-LD (Modulator Integrated DFB Laser Diode) is included • Modulator driver IC is included • Built-in optical isolator, PIN-Photo diode for monitor, thermistor and thermo-electric cooler • 800ps/nm (40km) DESCRIPTION The FTM1141GF was developed to reduce the size and technical complexity of 10Gb/s optical board designs. This product, which includes a driver and modulator integrated laser in one package, eliminates the customer concerns regarding how to handle the RF interfacing between these two components on his board. By co-packaging these components a solution has also been achieved that offers greatly reduced board space. This reduction in space is critical for next generation transponder applications. The FTM1141GF has been designed with a differential co-planar electrical interface which allows for easy interfacing to RF lines on PC boards. The package and pinout are part of a multi-source agreement. This product is designed for 40km SONET/SDM applications and single channel drop links in DWDM systems. ABSOLUTE MAXIMUM RATINGS (Top=25°C, Unless otherwise specified) Parameter Storage Temperature Operating Case Temperature Symbol Condition Tstg Top(Tc) CW CW CW Rating Min. -40 0 Max. 85 75 Unit -6.5 5 150 2 0.3 mW mA V V °C °C Optical Output Power Laser Forward Current Laser Reverse Voltage Power Supply Voltage Pf If VR VSS Modulator (Mod) modulation Control Voltage Vm -6.5 VSS+1.2 (max0.3) V Mod Bias Control Voltage Vb -6.5 VSS+2.4 (max0.3) V Cross Point Control Voltage Vx1,(Vx2) VSS-4.8 (min-6.5) VSS+2.4 (max0.3) V Data Input Voltage Din, DinB - 1.6 Vpp - 50 V - 200 V ESD Tolerance Vesd Differential (AC-coupled) Note (1-1) ESD Tolerance Vesd Note (1-2) Photodiode Forward Current IDF - 1 mA Photodiode Reverse Voltage VDR 10 2.5 1.5 - V Cooling Heating Cooling Heating -2.5 -0.9 ATC operation 0 +75 °C 260°C MAX - 10 sec TEC Voltage Vc TEC Current Ic Thermistor Temperature Lead Soldering Time Edition 1.1 July 2004 Tth 1 V A Driver Integrated 10Gb/s MI-DFB LD Module FTM1141GF OPTICAL SPECIFICATIONS (TLD=25°C, Tc=0 to 75°C and BOL, unless otherwise specified) LASER DIODE AND MODULATOR CHARACTERSITICS Symbol Condition Min. Limit Typ. Max. Unit Threshold Current Ith CW - - 25 mA Operating Current Iop Pf=Pop 40 70 100 mA Optical Output Power Pop Note (2a) -1 - +2 dBm Forward Voltage VF CW - - 2.2 V Extinction Ratio Rext Pf=Pop, Note (2a) 8.2 - - dB Peak Wavelength Wp Pf=Pop, Note (2a) 1530 - 1565 nm Side Mode Suppresion Ratio SSR Pf=Pop, CW 35 - - dB Optical Rise Time tr Note (3), 20% to 80% - - 30 psec Optical Fall Time tf Note (3), 20% to 80% - - 30 psec Optical Isolation Is 25 - - dB Tracking Error TE Note (2a) -0.5 - +0.5 dB Input Return Loss S11 130MHz to 10GHz, Tc=25°C 6 10 - dB Dispersion Penalty dP Note (2) - - 2.0 dB Msk Note (2a), 500 counts Parameter Eye Pattern Mask Error Free MONITOR DIODE CHARACTERISTICS Min. 100 Limit Typ. - Max. 1500 Unit VDR=5V VDR=5V, f=1MHz - 2 100 nA - 5 15 pF Symbol Condition Ic Note (4) Limit Typ. - Max. 1.4 Unit TEC Current Min. - TEC Voltage Vc Note (4) - - 2.5 V TEC Power Consumption Pc Note (4) - - 3.5 W Thermistor Resistance Rth TLD=25°C - 10 - kΩ Thermistor B Constant B 3270 3450 4000 K Parameter Symbol Condition Im IF=Iop, VDR=5V Monitor Dark Current Id Monitor Diode Capacitance Ct Monitor Current µA TEC & THERMISTOR CHARACTERISTICS Parameter 2 A Driver Integrated 10Gb/s MI-DFB LD Module FTM1141GF DRIVER IC CHARACTERISTICS Parameter Symbol Condition Min. Limit Typ. Max. Unit Driver IC Supply Voltage VSS -5.5 -5.2 -5.0 V Driver IC Supply Current ISS - - 285 mA Modulator (Mod) Modulation Control Voltage Vm VSS - VSS +1.0 V Mod Bias Control Voltage Vb VSS - VSS +2.2 V Cross Point (XP) Control Voltage Vx1, (Vx2) Xp=50% VSS +0.8 - VSS +2.2 V Data Input Voltage Din, DinB Differential (AC Coupled) 0.5 - 1.0 Vpp Note (1-1): Pin No. 3,4,5,6,7,9,11 Note (1-2): Pin No. 1,2,8,10,12-19 Note (2): Eudyna Test System (a) Drive Condition Bit Rate: Word Pattern: Mark Density: Laser Bias Current: Laser Temperature(TLD): Eye Pattern Mask: (b) Fiber Dispersion 800ps/nm (c) Dispersion Penalty Bit Error Rate=10-12 9.95328 Gb/s PRBS=231-1 50% Iop 25°C ITU-T Eye mask for STM-64 Note (3): Eudyna Test System Vb, Vm, Vx1(Vx2) is set to make Pop and Rext within the specification Note (4): Eudyna Test System Operating Case Temperature: Tc=+75°C Laser Temperature: 25°C Optical Output Power: Pf=Pop, Note (2a) Typical Output Waveform Back to Back (with Filter) 9.95328Gb/s, NRZ, PRBS=231-1, TLD=TC=25°C 3 Driver Integrated 10Gb/s MI-DFB LD Module FTM1141GF Typical Application for Driver IC Modulation Voltage Control Supply Voltage Cross Point Control Bias Voltage Control Chip Capacitor 0.1µF Chip Capacitor 0.1µF Ther r TEC Vx1 Vx2 VSS Vm Vb LD NC GND DinB Blocking Capacitor Ex. 0.1µF GND Din GND GND PD PD NC TEC For stable operation: 8-1. To prevent a dependence of “Cross point” on the supply voltage VSS, (1) Use an external voltage source of -3.8V for “Vx2”, or (2) Control the voltage of “Vx1”, so that the voltage difference “Vx1-Vx2” remain constant. 8-2. To prevent a dependence of “Modulation control voltage” on the supply voltage VSS, control the voltage of “Vm”, so that the difference “Vm-VSS” remain constant. 8-3. To prevent a dependence of “Bias control voltage” on the supply voltage VSS, control the voltage of “Vb”, so that the difference “Vb-VSS” remain constant. 4 Driver Integrated 10Gb/s MI-DFB LD Module FTM1141GF “GF” PACKAGE UNIT: mm 4.86±0.20 14-0.2 13 19 0.5 Ø0.9±0.1 5.3 18.0 12.0 8 22.0 35±1 1.25 1 Ø5.20±0.25 7 12 4-Ø2.6±0.2 9.6 7.7 Detail B 13.6 Detail A 17.6 L 25.0±0.5 Pin Description 4.95 3.56 NOTE: Pigtail length (L) shall be specified in the detail (individual) specification. 1.25 CONNECTOR 4-P1.0 4.46±0.20 5-0.15±0.08 4.56 (3) 5.8 12-P1.0 5-0.3 4.00±0.25 14-0.3 6.00±0.25 DETAIL-A DETAIL-B For further information please contact: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 1. Thermoelectric cooler(Anode, +) 2. Thermistor 3. VB: Modulator bias control voltage 4. Vm: Modulator modulation voltage control voltage 5. Vss: Driver IC supply voltage 6. Vx2: Cross point control voltage 7. Vx1: Cross point control voltage 8. Case Ground 9. DinB: Inverted data input voltage 10. Case Ground 11. Din: Data Input voltage 12. Case Ground 13. Monitor photo diode(Cathode) 14. Monitor photo diode(Anode) 15. Case Ground 16. LD Bias(Anode) 17. NC 18. NC 19. Thermoelectric cooler(Cathode, -) CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: www.us.eudyna.com • Do not put this product into the mouth. Eudyna Devices Europe Ltd. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 5