MICROSEMI 1N6766R

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
DUAL ULTRAFAST POWER RECTIFIER
Qualified per MIL-PRF-19500/643
DEVICES
LEVELS
1N6766
1N6767
1N6766R
1N6767R
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) (Per Diode)
Parameters / Test Conditions
Symbol
Value
Unit
VRWM
400
600
Vdc
IF
12
Adc
Peak Surge Forward Current
IFSM
125
A(pk)
Thermal Resistance - Junction to Case
Rθjc
1.8
°C/W
Peak Repetitive Reverse Voltage
Average Forward Current (1)
1N6766, R
1N6767, R
TC = +100°C
TO-254
Note:
(1) Derate @ 240mA/°C above TC = 100°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Breakdown Voltage (2)
IR = 10µAdc
Forward Voltage
IF = 6Adc
IF = 12Adc
1N6766
1N6767
(2)
Symbol
Min.
VBR
400
600
Max.
Unit
Vdc
•1
•2
•3
1N6766, 1N6767
VF1
VF2
1.35
1.55
Vdc
Reverse Leakage Current
VR = 320V
VR = 480V
1N6766
1N6767
IR1
10
µAdc
Reverse Leakage Current
VR = 320V, TC = +100°C
VR = 480V, TC = +100°C
1N6766
1N6767
IR2
1.0
mAdc
Reverse Recovery Time
IF = 1.0A, di/dt = 50A/µs
trr
60
nS
Junction Capacitance
VR = 5Vdc, f = 1.0MHz
CJ
300
pF
•1
•2
•3
1N6766R, 1N6767R
Note:
(2) Pulse Test; 300µS, duty cycle ≤ 2%
T4-LDS-0019 Rev. 1 (072045)
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