TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 DEVICES LEVELS 2N3506 2N3506A 2N3506L 2N3506AL 2N3507 2N3507A 2N3507L 2N3507AL JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol 2N3506 2N3507 Unit Collector-Emitter Voltage VCEO 40 50 Vdc Collector-Base Voltage VCBO 60 80 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 3.0 Adc PT 1.0 5.0 W Top, Tstg -65 to +200 °C Collector Current Total Power Dissipation (1) @ TA = 25°C @ TC = 25°C (2) Operating & Storage Temperature Range TO-5 (L-Versions) Note: 1) Derate linearly 5.71 mW/°C for TA > +25°C 2) Derate linearly 55.5 mW/°C for TC > +25°C ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. 2N3506 2N3507 V(BR)CEO 40 50 2N3506 2N3507 ICEX Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10mAdc Collector-Emitter Cutoff Current VCE = 40Vdc VCE = 60Vdc Vdc 1.0 1.0 µAdc Collector-Base Breakdown Voltage IC = 100µAdc V(BR)CBO 60 80 Vdc Emitter-Base Breakdown Voltage IE = 10µAdc V(BR)EBO 5 Vdc TO-39 (TO-205-AD) ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 500mAdc, VCE = 1Vdc 2N3506 2N3507 hFE 50 35 250 175 Forward-Current Transfer Ratio IC = 1.5Adc, VCE = 2Vdc 2N3506 2N3507 hFE 40 30 200 150 Forward-Current Transfer Ratio IC = 2.5Adc, VCE = 3Vdc 2N3506 2N3507 hFE 30 25 T4-LDS-0016 Rev. 1 (072040) Page 1 of 2 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.) Parameters / Test Conditions ON CHARACTERISTICS Symbol Min. Max. Unit (3) Forward-Current Transfer Ratio IC = 3.0Adc, VCE = 5Vdc 2N3506 2N3507 hFE 25 20 Forward-Current Transfer Ratio IC = 500mAdc, VCE = 1.0Vdc 2N3506 2N3507 hFE 25 17 Forward-Current Transfer Ratio IC = 500mAdc, VCE = 2Vdc 2N3506A 2N3507A hFE 25 17 Collector-Emitter Saturation Voltage IC = 500mAdc, IB = 50mAdc VCE(sat) 0.5 Vdc Collector-Emitter Saturation Voltage IC = 1.5Adc, IB = 150mAdc VCE(sat) 1.0 Vdc Collector-Emitter Saturation Voltage IC = 2.5Adc, IB = 250mAdc VCE(sat) 1.5 Vdc Base-Emitter Saturation Voltage IC = 500mAdc, IB = 50mAdc VBE(sat) 1.0 Vdc Base-Emitter Saturation Voltage IC = 1.5Adc, IB = 150mAdc VBE(sat) 1.3 Vdc Base-Emitter Saturation Voltage IC = 2.5Adc, IB = 250mAdc VBE(sat) 2.0 Vdc Unit 0.8 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 100mAdc, VCE = 5Vdc, f = 20MHz |hfe| 3.0 15 Output Capacitance VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Cobo 40 pF Input Capacitance VEB = 3.0Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz Cibo 300 pF Max. Unit SWITCHING CHARACTERISTICS (4) Parameters / Test Conditions Symbol Min. Delay Time IC = 1.5Adc, IB1 = 150mAdc td 15 ns Rinse Time IC = 1.5Adc, IB1 = 150mAdc tr 30 ns Storage Time IC = 1.5Adc, IB1 = IB2 = 150mAdc ts 55 ns Fall Time IC = 1.5Adc, IB1 = IB2 = 150mAdc tf 35 ns (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. (4) Consult MIL-PRF-19500/349 For Additional Infornation. T4-LDS-0016 Rev. 1 (072040) Page 2 of 2