FILTRONIC FMA3018QFN

FMA3018QFN
MEDIUM LINEARITY INTEGRATED BALANCED AMPLIFIER MODULE
BOARD PHOTOGRAPH:
FEATURES (1.7-2.0GHZ):
•
•
•
•
•
•
•
•
•
•
•
Preliminary Datasheet v2.1
Balanced low noise amplifier module
No external couplers required
Excellent 40 dBm Output IP3
25 dBm Output Power (P1dB)
Excellent Return Loss (RL): -25dB
14.5 dB Small-Signal Gain (SSG)
1.2 dB Noise Figure
5 V supply (240mA current)
Cost effective footprint: 4mm x 4mm QFN
6 mm x 6mm evaluation board available
RoHS compliant: (Directive 2002/95/EC)
GENERAL DESCRIPTION:
The BA1500QFN MMIC module is a selfbiased, integrated and packaged balanced
amplifier mounted onto 6x6mm2 FR4 board.
The active device is a pair of pseudomorphic
High Electron Mobility Transistors (pHEMT)
specifically
optimised
for
balanced
configuration systems. The Filtronic 0.25µm
process
ensures
class-leading
noise
performance.
The use of a small footprint
plastic package allows for a cost effective total
system implementation.
TYPICAL APPLICATIONS:
•
•
Wireless infrastructure: Tower mounted
Amplifiers and front end LNAs for
EGSM/PCS/WCDMA/UMTS base stations
High intercept-point LNAs
ELECTRICAL SPECIFICATIONS:
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Frequency
Freq
VDS = 5.0 V; IDS = 240mA
1.7
1.85
2
GHz
Minimum Noise Figure
NF
VDS = 5.0 V; IDS = 240mA
1.2
1.3
1.6
dB
Input Third-Order Intercept Point
IIP3
VDS = 5.0 V; IDS = 240mA
24
25.5
26.5
dBm
Small-Signal Gain
SSG
VDS = 5.0 V; IDS = 240mA
14
14.5
15.5
dB
Small-Signal Input Return Loss
S11
VDS = 5.0 V; IDS = 240mA
-25
-23
-20
dB
Small-Signal Output Return Loss
S22
VDS = 5.0 V; IDS = 240mA
-25
-23
-22
dB
Power at 1dB Gain Compression
P1dB
VDS = 5.0 V; IDS = 240mA
24.5
25
25.5
dBm
Note: TAMBIENT = 22°C
1
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMA3018QFN
Preliminary Datasheet v2.1
1
ABSOLUTE MAXIMUM RATING :
PARAMETER
SYMBOL
TEST CONDITIONS
ABSOLUTE MAXIMUM
Drain-Source Voltage
VDS
5
8V
Channel Operating Temperature
TCH
Under any acceptable bias state
175°C
Storage Temperature
TSTG
Non-Operating Storage
-55°C to 150°C
Notes:
1.
2.
TAmbient = 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may
cause permanent damage to the device
Information on the mounting of QFN style packages for optimum thermal performance is available on
request.
BIASING GUIDELINE:
•
The BA1500QFN module is a self-biased circuit, which employ an RF-bypassed source resistor to
provide the negative Gate-Source bias voltage, and such circuits provide some temperature
stabilization for the device
TYPICAL MEASURED PERFORMANCE ON EVALUATION BOARD:
S21 (dB)
Return Loss (dB)
20
0
15
-10
10
-20
5
-30
0
0.5
1
1.5
2
2.5
Frequency (GHz)
-40
0.5
3
NF (dB)
2.5
2
1.5
1.7 1.8 1.9
2
Frequency (GHz)
1
1.5
2
2.5
Frequency (GHz)
S22
3
IIP3 LO (dBm)
28
27
26
25
24
23
1.7
3
1
1.6
S11
2.1
1.8
1.9
Frequency (GHz)
2
Note: NF can be centred by optimising printed inductive elements
2
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMA3018QFN
Preliminary Datasheet v2.1
REFERENCE DESIGN (1.7-2GHZ):
COMPONENT
(1.7-2)GHZ
QFN
4x4 QFN package
Eval board material
6x6 mm RF4 Board (0.8 mm thick 1/2 Ounce Cu on both sides and printed inductors)
EVALUATION BOARD LAYOUT (DRAWINGS AVAILABLE ON REQUEST):
VD1
4x4QFN
package
SMA
connector
RFin
RFout
SMA
connector
VD2
SIMPLIFIED MODULE SCHEMATIC:
2
FSS25_SSpHEMT
1
PORT
P=1
SUBCKT
ID=Coupler
2
1
INDQ
INDQ
3
3
RES
CAP
3
2
2
SUBCKT
ID=Coupler
1
PORT
P=2
1
INDQ
FSS25_SSpHEMT
3
INDQ
RES
CAP
3
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMA3018QFN
Preliminary Datasheet v2.1
PACKAGE OUTLINE:
(Dimensions in millimetres – mm)
Pin identifier
0.4
4±0.05
SLP 24L
4X4
0.5
4±0.05
2.75
Bottom View
Top View
0.9
0.5
side View
PREFERRED ASSEMBLY INSTRUCTIONS:
APPLICATION NOTES & DESIGN DATA:
Please
contact
Filtronic
Compound
Semiconductors Ltd for further details.
Application Notes and design data including Sparameters are available; please contact
Filtronic Compound Semiconductors Ltd.
HANDLING PRECAUTIONS:
DISCLAIMERS:
To avoid damage to
the
devices
care
should be exercised
during
handling.
Proper
Electrostatic
Discharge
(ESD)
precautions should be observed at all stages of
storage, handling, assembly, and testing.
These devices should be treated as Class 1A
(0-500 V) as defined in JEDEC Standard No.
22-A114. Further information on ESD control
measures can be found in MIL-STD-1686 and
MIL-HDBK-263.
This product is not designed for use in any
space based or life sustaining/supporting
equipment.
ORDERING INFORMATION:
PART NUMBER
DESCRIPTION
FMA3018QFN-EB
Packaged Balanced MMIC LNA
Evaluation Board
4
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com