FMA3016-QFN 3.5GHz High Power Amplifier for WiMAX applications FEATURES: • • • • • • Preliminary Datasheet v3.1 FMA3016-QFN EVALUATION BOARD: 3.5GHz WiMAX power amplifier 17dB gain 2.5% EVM with 30dBm transmit power 10% PAE with 30dBm transmit power 10W Psat 20 lead air-cavity QFN with Cu lead frame GENERAL DESCRIPTION: FMA3016-QFN is a high power packaged MMIC amplifier for 3.5GHz WiMAX applications. This device exhibits 17dB of gain, has a Psat of greater than 10W and 2.5% EVM with 10% PAE at 30dB transmit power with a 64 QAM OFDM signal. The part is packaged in a 20 lead air-cavity QFN (8x6x1.4mm) with a copper lead frame for enhanced thermal performance. TYPICAL APPLICATIONS: • • WiMAX 802.16 Broadband wireless ELECTRICAL SPECIFICATIONS: PARAMETER CONDITIONS Frequency Range MIN Gain Gain variation over temperature TYP 3.4 MAX UNITS 3.6 GHz 17 -40 to +85 deg C Base Plate Temperature dB ± 1.5 dB Input Return Loss 12 dB Output Return Loss 10 dB EVM @30dBm transmit power OFDM signal PAE @30dBm transmit power OFDM signal Output power at P1dB 2.5 9 % 10 % CW conditions 38 dBm Output IP3 CW conditions 50 dBm ACP @30dBm Pout 7MHz BW, Adjacent Channel Power measured in a 1MHz BW, offset by 7.5MHz from the centre frequency -52 dBc 10 dB Noise Figure Stability Unconditional across all frequencies with appropriate decoupling networks VD1, VD2 VG1, VG2 Class AB to obtain optimum linearity 8 10 V -1.2 -0.5 V IDS 1.2 A 1 Tel: +44 (0) 1325 301111 Preliminary Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMA3016-QFN Preliminary Datasheet v2.1 ABSOLUTE MAXIMUM RATINGS: PACKAGE PIN OUT PARAMETER SYMBOL ABSOLUTE MAXIMUM Max Input Power Pin +32dBm Drain Bias Voltage Storage Temp +15V Tstor -55°C to +150°C Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device. PACKAGE LAYOUT: THERMAL INFORMATION Parameter Test Conditions Tch RθJC (°C) (°C/W) Vd = 8 V RθJC Thermal Resistance 140 6 (Channel to backside of package) ID = 1.2 A Pdiss = 9.6 W 2 Tel: +44 (0) 1325 301111 Preliminary Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMA3016-QFN Preliminary Datasheet v2.1 TYPICAL MEASURED PERFORMANCE ON-W AFER: Note: Measurement Conditions VD1, VD2= 10V & ID=700mA, TAMBIENT = 25°C Input Return Loss Gain 0 20 S11 -5 15 3.4 GHz 17.63 dB -10 10 S21 3.6 GHz -18.7 dB 3.4 GHz -18.13 dB -15 3.6 GHz 18.11 dB 5 -20 -25 0 3 3.2 3.4 3.6 Frequency (GHz) 3.8 4 3 3.2 3.4 3.6 Frequency (GHz) Reverse Isolation 3.8 4 3.8 4 Output Return Loss -40 0 -60 -5 S22 S12 -80 -10 -100 -120 0.045 -15 3.4 GHz -12.74 dB 3.6 GHz -11.44 dB -20 5.04 10 Frequency (GHz) 15 20 3 3.2 3.4 3.6 Frequency (GHz) 3 Tel: +44 (0) 1325 301111 Preliminary Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMA3016-QFN Preliminary Datasheet v2.1 TYPICAL MEASURED PERFORMANCE EVALUATION BOARD: NOTE: MEASUREMENT CONDITIONS VD1, VD2= 8V, TAMBIENT = 25°C EVM and Current Over Output Power 800 1.90 700 1.80 1.70 1.60 500 1.50 400 1.40 300 EVM (%) Current (mA) 600 Id1 (mA) Id2 (mA) EVM (%) 1.30 200 1.20 100 1.10 0 1.00 0 5 10 15 20 25 30 35 Output Power 5 4.5 Board1 Board2 4 Board3 3.5 EVM (%) 3 2.5 2 1.5 1 0.5 0 3.3 3.35 3.4 3.45 3.5 3.55 3.6 3.65 3.7 Frequency (GHz) 4 Tel: +44 (0) 1325 301111 Preliminary Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMA3016-QFN Preliminary Datasheet v2.1 EVALUATION BOARD COMPONENT LAYOUT: VG1 VD1VG2 VD2 Vg1 Vd1 10uF 100pF PORT P=1 Z=50 O hm 100pF Vd2 10uF 10uF 100pF 100pF 100pF ML IN ID=TL 2 W=Cap _In ter u m L= 150 0 um MSUB= "M SUB1" M LI N ID =T L1 W =Ca p_ Int er um L =1 500 u m M SUB=" M SUB1" 100pF 100pF 10uF 10uF Vd1 VD1 VG2 Vg2 10uF PORT P=2 Z= 50 Oh m 100pF 10uF Vg2 Vd2 VD2 BILL OF MATERIALS: LABEL COMPONENT Board Preferred evaluation board material is 30-mil thick ROGERS RT4350. All RF tracks should be 50-ohm characteristic material P6, P7 SMA RF edge connector P1, P2, P3, P4, P5 DC connector C1, C2, C3, C4, C5, C6, C7, C8, C9, Capacitor, 10uF, 0603 C10,C11, C12,C13, C14,C15, C16,C17, C18, C19 Capacitor, 100pF, 0603 Q1 FMA3016-QFN 5 Tel: +44 (0) 1325 301111 Preliminary Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMA3016-QFN Preliminary Datasheet v2.1 PREFERRED ASSEMBLY INSTRUCTIONS: Please contact Filtronic Compound Semiconductors for further details. PART NUMBER DESCRIPTION Packaged MMIC FMA3016-QFN HANDLING PRECAUTIONS: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (250500 V) as defined in JEDEC Standard No. 22A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. DISCLAIMERS: This product is not designed for use in any space based or life sustaining/supporting equipment. 6 Tel: +44 (0) 1325 301111 Preliminary Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com