FILTRONIC FMA3016-QFN

FMA3016-QFN
3.5GHz High Power Amplifier for WiMAX applications
FEATURES:
•
•
•
•
•
•
Preliminary Datasheet v3.1
FMA3016-QFN EVALUATION BOARD:
3.5GHz WiMAX power amplifier
17dB gain
2.5% EVM with 30dBm transmit power
10% PAE with 30dBm transmit power
10W Psat
20 lead air-cavity QFN with Cu lead
frame
GENERAL DESCRIPTION:
FMA3016-QFN is a high power packaged
MMIC amplifier for 3.5GHz WiMAX
applications. This device exhibits 17dB of
gain, has a Psat of greater than 10W and
2.5% EVM with 10% PAE at 30dB transmit
power with a 64 QAM OFDM signal. The
part is packaged in a 20 lead air-cavity QFN
(8x6x1.4mm) with a copper lead frame for
enhanced thermal performance.
TYPICAL APPLICATIONS:
•
•
WiMAX
802.16 Broadband wireless
ELECTRICAL SPECIFICATIONS:
PARAMETER
CONDITIONS
Frequency Range
MIN
Gain
Gain variation over
temperature
TYP
3.4
MAX
UNITS
3.6
GHz
17
-40 to +85 deg C
Base Plate Temperature
dB
± 1.5
dB
Input Return Loss
12
dB
Output Return Loss
10
dB
EVM @30dBm transmit
power
OFDM signal
PAE @30dBm transmit
power
OFDM signal
Output power at P1dB
2.5
9
%
10
%
CW conditions
38
dBm
Output IP3
CW conditions
50
dBm
ACP @30dBm Pout
7MHz BW, Adjacent Channel Power measured
in a 1MHz BW, offset by 7.5MHz from the
centre frequency
-52
dBc
10
dB
Noise Figure
Stability
Unconditional across all frequencies with
appropriate decoupling networks
VD1, VD2
VG1, VG2
Class AB to obtain optimum linearity
8
10
V
-1.2
-0.5
V
IDS
1.2
A
1
Tel: +44 (0) 1325 301111
Preliminary Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMA3016-QFN
Preliminary Datasheet v2.1
ABSOLUTE MAXIMUM RATINGS:
PACKAGE PIN OUT
PARAMETER
SYMBOL
ABSOLUTE
MAXIMUM
Max Input
Power
Pin
+32dBm
Drain Bias
Voltage
Storage Temp
+15V
Tstor
-55°C to +150°C
Note: Exceeding any one of these absolute
maximum ratings may cause permanent
damage to the device.
PACKAGE LAYOUT:
THERMAL INFORMATION
Parameter
Test Conditions Tch RθJC
(°C) (°C/W)
Vd = 8 V
RθJC Thermal Resistance
140
6
(Channel to backside of package) ID = 1.2 A
Pdiss = 9.6 W
2
Tel: +44 (0) 1325 301111
Preliminary Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMA3016-QFN
Preliminary Datasheet v2.1
TYPICAL MEASURED PERFORMANCE ON-W AFER:
Note: Measurement Conditions VD1, VD2= 10V & ID=700mA, TAMBIENT = 25°C
Input Return Loss
Gain
0
20
S11
-5
15
3.4 GHz
17.63 dB
-10
10
S21
3.6 GHz
-18.7 dB
3.4 GHz
-18.13 dB
-15
3.6 GHz
18.11 dB
5
-20
-25
0
3
3.2
3.4
3.6
Frequency (GHz)
3.8
4
3
3.2
3.4
3.6
Frequency (GHz)
Reverse Isolation
3.8
4
3.8
4
Output Return Loss
-40
0
-60
-5
S22
S12
-80
-10
-100
-120
0.045
-15
3.4 GHz
-12.74 dB
3.6 GHz
-11.44 dB
-20
5.04
10
Frequency (GHz)
15
20
3
3.2
3.4
3.6
Frequency (GHz)
3
Tel: +44 (0) 1325 301111
Preliminary Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMA3016-QFN
Preliminary Datasheet v2.1
TYPICAL MEASURED PERFORMANCE EVALUATION BOARD:
NOTE: MEASUREMENT CONDITIONS VD1, VD2= 8V, TAMBIENT = 25°C
EVM and Current Over Output Power
800
1.90
700
1.80
1.70
1.60
500
1.50
400
1.40
300
EVM (%)
Current (mA)
600
Id1 (mA)
Id2 (mA)
EVM (%)
1.30
200
1.20
100
1.10
0
1.00
0
5
10
15
20
25
30
35
Output Power
5
4.5
Board1
Board2
4
Board3
3.5
EVM (%)
3
2.5
2
1.5
1
0.5
0
3.3
3.35
3.4
3.45
3.5
3.55
3.6
3.65
3.7
Frequency (GHz)
4
Tel: +44 (0) 1325 301111
Preliminary Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMA3016-QFN
Preliminary Datasheet v2.1
EVALUATION BOARD COMPONENT LAYOUT:
VG1
VD1VG2
VD2
Vg1
Vd1
10uF
100pF
PORT
P=1
Z=50 O hm
100pF
Vd2
10uF
10uF
100pF
100pF
100pF
ML IN
ID=TL 2
W=Cap _In ter u m
L= 150 0 um
MSUB= "M SUB1"
M LI N
ID =T L1
W =Ca p_ Int er um
L =1 500 u m
M SUB=" M SUB1"
100pF
100pF
10uF
10uF
Vd1
VD1 VG2
Vg2
10uF
PORT
P=2
Z= 50 Oh m
100pF
10uF
Vg2
Vd2
VD2
BILL OF MATERIALS:
LABEL
COMPONENT
Board
Preferred evaluation board material is 30-mil thick ROGERS RT4350. All RF tracks should be 50-ohm
characteristic material
P6, P7
SMA RF edge connector
P1, P2,
P3, P4,
P5
DC connector
C1, C2,
C3, C4,
C5, C6,
C7, C8,
C9,
Capacitor, 10uF, 0603
C10,C11,
C12,C13,
C14,C15,
C16,C17,
C18, C19
Capacitor, 100pF, 0603
Q1
FMA3016-QFN
5
Tel: +44 (0) 1325 301111
Preliminary Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMA3016-QFN
Preliminary Datasheet v2.1
PREFERRED ASSEMBLY INSTRUCTIONS:
Please
contact
Filtronic
Compound
Semiconductors for further details.
PART NUMBER
DESCRIPTION
Packaged MMIC
FMA3016-QFN
HANDLING
PRECAUTIONS:
To avoid damage to the devices care should
be exercised during handling.
Proper
Electrostatic Discharge (ESD) precautions
should be observed at all stages of storage,
handling, assembly, and testing.
These
devices should be treated as Class 1A (250500 V) as defined in JEDEC Standard No. 22A114. Further information on ESD control
measures can be found in MIL-STD-1686 and
MIL-HDBK-263.
DISCLAIMERS:
This product is not designed for use in any
space based or life sustaining/supporting
equipment.
6
Tel: +44 (0) 1325 301111
Preliminary Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com