FPD750SOT343 Datasheet v3.0 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: ROHS: FEATURES (1850MHZ): • • • • • 9 0.5 dB N.F.min. 20 dBm Output Power (P1dB) 16.5 dB Small-Signal Gain (SSG) 37 dBm Output IP3 RoHS compliant (Directive 2002/95/EC) GENERAL DESCRIPTION: The FPD750SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 750 µm Schottky barrier Gate. The Filtronic 0.25µm process ensures class-leading noise performance. The use of a small footprint plastic package allows for cost effective system implementation. TYPICAL APPLICATIONS: • • • 802.11a,b,g and WiMax LNAs PCS/Cellular High Linearity LNAs Other types of wireless infrastructure systems. TYPICAL PERFORMANCE1: RF PARAMETER SYMBOL CONDITIONS 0.9GHZ 1.85GHZ 2.6GHZ 3.5GHZ UNITS Power at 1dB Gain Compression OP1dB VDS = 3.3 V; IDS = 40mA 20 19 20 20.5 dBm Small Signal Gain SSG VDS = 3.3 V; IDS = 40mA 22 16.5 14 11 dB Power-Added Efficiency PAE VDS = 3.3 V; IDS = 40mA 50 45 45 50 % POUT = P1dB Maximum Stable Gain (|S21/S12|) MSG VDS = 3.3 V; IDS = 40mA 24 20 18 16 dB Noise Figure N.F. VDS = 3.3 V; IDS = 40mA 0.5 0.6 0.7 0.8 dB Output Third-Order Intercept Point OIP3 VDS = 3.3V; IDS = 40mA 32 31 31 32 VDS = 3.3V; IDS = 80mA 35 37 35 38 POUT = 9 dBm per Tone dBm ELECTRICAL SPECIFICATIONS2: RF/DC PARAMETER SYMBOL CONDITIONS MIN TYP MAX Frequency f Power at 1dB Gain Compression P1dB VDS = 3.3 V; IDS = 40mA 17 dBm Small Signal Gain SSG VDS = 3.3 V; IDS = 40mA 16 dB Saturated Drain-Source Current IDSS VDS = 1.3 V; VGS = 0 V 185 Transconductance GM VDS = 1.3 V; VGS = 0 V Pinch-Off Voltage |VP| VDS = 1.3 V; IDS = 0.75 mA 0.7 1.0 Gate-Source Breakdown Voltage |VBDGS| IGS = 0.75 mA 13 16 V Gate-Drain Breakdown Voltage |VBDGD| IGD = 0.75 mA 13 18 V Thermal Resistivity (see Notes) θJC VDS > 3V 143 °C/W 2.0 230 UNITS GHz 280 200 mA mS 1.3 V Note: 1. Based on measured data taken on applications circuits. 2. All devices are 100% RF and DC tested at 2GHz with ZS = ZL = 50 Ohms 3. TAMBIENT = 22°C 1 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD750SOT343 Datasheet v3.0 1 ABSOLUTE MAXIMUM RATING : PARAMETER SYMBOL TEST CONDITIONS ABSOLUTE MAXIMUM Drain-Source Voltage VDS -3V < VGS < -0.5V 6V Gate-Source Voltage VGS 0V < VDS < +6V -3V Drain-Source Current IDS For VDS < 2V IDss Gate Current IG Forward or reverse current 7.5mA PIN VDS = 3.3V 22dBm Channel Operating Temperature TCH Under any acceptable bias state 175°C Storage Temperature TSTG Non-Operating Storage -55°C to 150°C PTOT See De-Rating Note below 1.1W Comp. Under any bias conditions 5dB 2 or more Max. Limits 80% RF Input Power 2 Total Power Dissipation 4 Gain Compression Simultaneous Combination of Limits 3 Notes: 1 TAmbient = 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause permanent damage to the device 2 Max. RF Input Limit must be further limited if input VSWR > 2.5:1 3 Users should avoid exceeding 80% of 2 or more Limits simultaneously 4 Total Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power Total Power Dissipation to be de-rated as follows above 22°C: PTOT= 1.1 - (1/Θjc) x TPACK where TPACK= source tab lead temperature above 22°C & Θjc = 143ºC/W BIASING GUIDELINES: • Active bias circuits provide good performance stabilization over variations of operating temperature, but require a larger number of components compared to self-bias or dual-biased. Such circuits should include provisions to ensure that Gate bias is applied before Drain bias, otherwise the pHEMT may be induced to self-oscillate. Contact your Sales Representative for additional information. Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage supply for depletion-mode devices. For standard Class A operation, a 50% of IDSS bias point is recommended. A small amount of RF gain expansion prior to the onset of compression is normal for this operating point. Class A/B bias of 25-33% offers an optimised solution for NF and OIP3. • • DC IV Curves FPD750SOT89 0.30 Drain-Source Current (A) 0.25 0.20 VG=-1.50 VG=-1.25V VG=-1.00V VG=-0.75V VG=-0.50V VG=-0.25V VG=0V 0.15 0.10 Note: The recommended method for measuring IDSS, or any particular IDS, is to set the Drain-Source voltage (VDS) at 1.3V. This measurement point avoids the onset of spurious self-oscillation which would normally distort the current measurement (this effect has been filtered from the I-V curves presented above). Setting the VDS > 1.3V will generally cause errors in the current measurements, even in stabilized circuits. 0.05 0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Drain-Source Voltage (V) 2 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD750SOT343 Datasheet v3.0 TYPICAL FREQUENCY REPONSE: MSG & S21 vs Frequency Biased @ 3.3V, 40mA 28 N.F.min vs Frequency Biased @ 3.3V 1.20 S21 1.00 N.F.min (dB) 20 16 Mag S21 & MSG (dB) MSG 24 12 8 0.80 0.60 0.40 4 0.20 0 0.00 ID = 80mA 9.5 10.5 6.0 8.5 5.4 7.5 4.8 6.5 4.2 5.5 3.6 4.5 Frequency (GHz) 3.0 3.5 2.4 2.5 1.8 1.5 1.2 0.5 0.6 ID = 40mA Frequency (GHz) NOTE: Typical Gain and Noise figure variation against frequency is shown above. The devices were biased nominally at VDS = 3.3V, IDS = 40mA. The test devices were tuned for minimum noise figure and maximum gain using tuners at the device input and output ports. 1.85 GHZ: Power Transfer Characteristic VDS = 3.3V IDS = 80mA at f = 1.85GHz 23.0 7.00 23.0 21.0 6.00 21.0 19.0 5.00 19.0 5.00 17.0 4.00 17.0 4.00 15.0 3.00 15.0 3.00 13.0 2.00 13.0 2.00 11.0 1.00 11.0 1.00 9.0 0.00 9.0 0.00 7.0 -10.0 -8.0 -6.0 Comp Point -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Output Power (dBm) Pout (dBm) Gain Compression (dB) Output Power (dBm) Power Transfer Characteristic VDS = 3.3V IDS = 40mA at f = 1.85GHz 7.0 -10.0 -1.00 10.0 7.00 Pout (dBm) -8.0 -6.0 6.00 Comp Point -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 10.0 Input Power (dBm) Input Power (dBm) NOTE: Typical power transfer curves at two bias conditions are shown above. The data is taken with the device mounted on evaluation board tuned at 1.85GHz for low noise and gain as shown in the reference design given on page 6. 3 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com -1.00 12.0 Gain Compression (dB) TYPICAL RF PERFORMANCE @ FPD750SOT343 Datasheet v3.0 TYPICAL RF PERFORMANCE @ 1.85 GHZ: Typical Intermodulation Performance VDS = 3.3V IDS = 80mA at f = 1.85GHz Typical Intermodulation Performance VDS = 3.3V IDS = 40mA at f = 1.85GHz -30 12 3rds (dBc) 8 -50 6 -56 -54 4 -62 -60 2 8 -42 6 -48 4 -11.3 -10.3 -9.3 -8.3 -7.3 -6.3 -5.3 -4.3 3rds (dBc) -44 -36 -12.3 -38 Pout (dBm) 10 10 2 -32 -3.3 -68 -12.8 -11.8 -10.8 -9.8 Input Power (dBm) -8.8 -7.8 -6.8 -5.8 -4.9 Input Power (dBm) NOTE: Typical intermodulation performance is shown above. The data is taken with the device mounted on evaluation board tuned at 1.85GHz for low noise and gain as shown in the reference design given on page 6. The FPD750SOT343 has enhanced Intermodulation performance with an OIP3 value of up to P1dB+16dBm. This effect can be seen when the device is biased at ID=80mA by the bough in the 3rd order product plot line . NOISE PARAMETERS: Biased at VDS=3.3V, IDS=40mA Freq. (GHz) 0.60 0.90 1.20 1.50 1.80 2.10 2.40 2.70 3.00 3.30 3.60 3.90 4.20 4.50 4.80 5.10 5.40 5.70 6.00 N.F.min (dB) 0.37 0.40 0.43 0.46 0.49 0.52 0.55 0.58 0.61 0.64 0.67 0.70 0.73 0.76 0.78 0.81 0.84 0.87 0.90 Γopt Mag 0.770 0.689 0.614 0.546 0.485 0.431 0.383 0.342 0.307 0.280 0.258 0.244 0.236 0.236 0.242 0.254 0.273 0.299 0.332 Angle 12.2 21.2 30.6 40.4 50.6 61.1 72.1 83.4 95.1 107.2 119.8 132.7 146.0 159.6 173.7 -171.9 -157.0 -141.8 -126.1 Biased at VDS=3.3V, IDS=80mA Freq. (GHz) 0.60 0.90 1.20 1.50 1.80 2.10 2.40 2.70 3.00 3.30 3.60 3.90 4.20 4.50 4.80 5.10 5.40 5.70 6.00 Rn/50 0.108 0.100 0.092 0.084 0.077 0.069 0.063 0.057 0.053 0.049 0.046 0.043 0.042 0.040 0.040 0.041 0.044 0.050 0.061 N.F.min (dB) 0.39 0.42 0.46 0.50 0.53 0.57 0.60 0.64 0.68 0.71 0.75 0.79 0.83 0.86 0.90 0.94 0.97 1.01 1.05 Γopt Mag. 0.732 0.644 0.564 0.492 0.428 0.372 0.324 0.283 0.251 0.227 0.210 0.202 0.201 0.208 0.223 0.247 0.277 0.317 0.364 Angle 11.5 22.1 33.0 44.2 55.9 67.9 80.2 93.0 106.2 119.7 133.6 147.9 162.5 177.5 -167.1 -151.4 -135.2 -118.7 -101.8 Rn/50 0.129 0.115 0.102 0.090 0.079 0.070 0.063 0.057 0.053 0.050 0.049 0.048 0.048 0.049 0.051 0.056 0.065 0.080 0.106 4 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com -3.9 3rd Order IM Products (dBc) Output Power (dBm) Pout (dBm) 14 Output Power (dBm) 12 -24 3rd Order IM Products (dBc) 14 FPD750SOT343 Datasheet v3.0 REFERENCE DESIGN (0.9GHZ): FREQUENCY GHZ 0.9 Gain P1dB OIP31 N.F. S11 S22 Vd Vg Id dB dBm dBm dB dB dB V V mA 22 20 32 0.5 -5 -10 3.3 -0.4 to -0.6 40 1. OIP3 measured at Pout of 9dBm per tone Measured Gain and Return Loss BOARD LAYOUT: Vg Vd 15pF 0.01uF 15pF + 1.0uF + 20O Lg 33pF 0.01uF Ld L1 L2 33pF 0.63" Q1 1.45" Component Values Component Value Description Lg 56nH LL1608 Toko chip inductor Ld 56nH LL1608 Toko chip inductor L1 15nH LL1608 Toko chip inductor L2 4.7nH LL1608 Toko chip inductor Eval board material - 31mil thick FR4 with 1/2 Ounce Cu on both sides FPD750SOT343 EVAL Board -Vg Schematic 0.01uF @ 900MHz 15pF Vd 1.0uF 0.01uF 15pF 20 Ohm 33pF 56 nH L1 56 nH L2 RF OUT RF IN D.C. Blocking capacitors are ATC series 600S. A tantalum 1.0µF is used at the drain terminal. All other capacitors are 0603 and 0805 standard chip capacitors. A 0603 size 20 Ohm Chip resistor from Vishay is used on the gate D.C. bias line for stability. 5 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] 33pF Website: www.filtronic.com FPD750SOT343 Datasheet v3.0 REFERENCE DESIGN (1.85GHZ): FREQUENCY GHZ 1.85 Gain P1dB OIP31 N.F. S11 S22 Vd Vg Id dB dBm dBm dB dB dB V V mA 16.5 19 31 0.6 -6 -10 3.3 -0.4 to -0.6 40 1.OIP3 measured at Pout of 9dBm per tone Measured Gain and Return Loss BOARD LAYOUT: Vg Vd 15pF 15pF 0.01uF 0.01uF + 1.0uF + 20O Lg 33pF Ld L1 L2 33pF 0.63" Q1 C2 1.45" Component Values Component Value Description Lg 22nH LL1608 Toko chip inductor Ld 22nH LL1608 Toko chip inductor L1 2.2nH LL1005 Toko chip inductor L2 1.8nH LL1005 Toko chip inductor C2 1.0pF FPD750SOT343 EVAL Board -Vg Schematic 0.01uF @ 1.85GHz 15pF Vd 1.0uF 0.01uF 15pF 20 Ohm 33pF ATC 600S Chip Capacitor 22 nH L1 RF IN 22 nH L2 33pF C2 RF OUT Eval board material - 31mil thick FR4 with 1/2 Ounce Cu on both sides D.C. Blocking capacitors are ATC series 600S. A tantalum 1.0µF is used at the drain terminal. All other capacitors are 0603 and 0805 standard chip capacitors. A 0603 size 20 Ohm Chip resistor from Vishay is used on the gate D.C. bias line for stability. 6 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD750SOT343 Datasheet v3.0 REFERENCE DESIGN (2.6GHZ): FREQUENCY GHZ 2.5 Gain P1dB OIP31 N.F. S11 S22 Vd Vg Id dB dBm dBm dB dB dB V V mA 14.2 20 30.5 0.8 -20 -7 2.6 2.7 14 13.5 21 21 31 31 0.7 0.75 -25 -20 -8 -10 3.3 -0.4 to -0.6 40 1. OIP3 measured at Pout of 9dBm per tone Measured Gain and Return Loss BOARD LAYOUT: Vg Vd 15pF 0.01uF 15pF 20O Lg 33pF + 1.0uF + 0.01uF Ld L1 C2 33pF 0.63" Q1 C1 L2 1.45" Component Values Component FPD750SOT343 EVAL Board -Vg Schematic 0.01uF Value Description Lg 18nH LL1608 Toko chip inductor Ld 18nH LL1608 Toko chip inductor L1 1.2nH LL1005 Toko chip inductor L2 2.7nH LL1005 Toko chip inductor C1 1.0pF ATC 600S Chip Capacitor C2 1.8pF ATC 600S Chip Capacitor 2.6GHz Vd 1.0uF 0.01uF 15pF 15pF 20 Ohm 33pF RF IN 18nH L1 18nH C2 33pF RF OUT C1 L2 Eval board material - 31mil thick FR4 with 1/2 Ounce Cu on both sides D.C. Blocking capacitors are ATC series 600S. A tantalum 1.0µF is used at the drain terminal. All other capacitors are 0603 and 0805 standard chip capacitors. A 0603 size 20 Ohm Chip resistor from Vishay is used on the gate D.C. bias line for stability. 7 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD750SOT343 Datasheet v3.0 REFERENCE DESIGN (3.5GHZ): FREQUENCY GHZ 3.5 Gain P1dB OIP31 N.F. S11 S22 Vd Vg Id dB dBm dBm dB dB dB V V mA 11 20.5 32 0.75 -11 -11 3.3 -0.4 to -0.6 40 1. OIP3 measured at Pout of 9dBm per tone Measured Gain and Return Loss BOARD LAYOUT: Vg Vd 15pF 0.01uF 20O 0.01uF 15pF Lg L1 10pF C1 + 1.0uF + Ld C2 Q1 10pF 0.63" L2 1.45" Component Values Component Value Description Lg 18nH LL1608 Toko chip inductor Ld 18nH LL1608 Toko chip inductor L1 1.0nH 0402CS Coil Cr. inductor L2 2.7nH 0402CS Coil Cr. inductor C1 0.3pF ATC 600S Chip Capacitor ATC 600S Chip Capacitor C2 0.8pF Eval board material - 31mil thick Rogers 4003 with 1/2 Ounce Cu on both sides. FPD750SOT343 EVAL Board -Vg Schematic 0.01uF @ 3.5GHz 15pF Vd 1.0uF 0.01uF 15pF 20 Ohm 10pF RF IN 18 nH L1 18 nH C2 10pF RF OUT C1 L2 D.C. Blocking capacitors are ATC series 600S. A tantalum 1.0µF is used at the drain terminal. All other capacitors are 0603 and 0805 standard chip capacitors. A 0603 size 20 Ohm Chip resistor from Vishay is used on the gate D.C. bias line for stability. 8 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD750SOT343 Datasheet v3.0 S-PARAMETERS (BIASED @ 3.3V, 40mA) Freq (GHz) 0.60 0.90 1.20 1.50 1.80 2.10 2.40 2.70 3.00 3.30 3.60 3.90 4.20 4.50 4.80 5.10 5.40 5.70 6.00 S11 Mag. 0.875 0.788 0.707 0.641 0.590 0.557 0.532 0.515 0.501 0.491 0.484 0.484 0.483 0.489 0.494 0.503 0.515 0.528 0.545 Ang. -51.0 -72.8 -92.2 -109.4 -124.7 -138.4 -151.0 -162.2 -172.8 178.2 169.6 161.3 153.4 145.3 136.9 128.7 120.5 112.3 104.4 S21 Mag. 12.561 11.024 9.608 8.377 7.354 6.547 5.881 5.341 4.886 4.519 4.202 3.950 3.728 3.525 3.340 3.173 3.020 2.874 2.725 S12 Ang. 139.4 123.3 110.0 98.5 88.5 79.6 71.5 64.0 56.9 50.2 43.6 37.2 30.7 24.1 17.5 11.1 4.5 -2.2 -8.8 Mag. 0.034 0.046 0.057 0.065 0.072 0.079 0.086 0.092 0.099 0.105 0.112 0.118 0.125 0.131 0.137 0.143 0.148 0.153 0.156 S22 Ang. 67.2 59.0 53.0 48.1 44.2 40.6 37.5 34.3 31.2 28.2 24.9 21.5 17.9 14.0 9.8 5.6 1.2 -3.4 -8.0 Mag. 0.294 0.248 0.216 0.186 0.162 0.150 0.138 0.132 0.126 0.119 0.116 0.110 0.107 0.110 0.115 0.125 0.141 0.161 0.185 Ang. 69.0 62.1 57.1 53.2 49.8 46.5 43.5 40.5 37.3 34.3 30.9 27.5 23.9 19.9 15.7 11.5 7.0 2.3 -2.3 Mag. 0.256 0.210 0.180 0.151 0.128 0.115 0.104 0.097 0.090 0.083 0.079 0.073 0.068 0.069 0.071 0.079 0.094 0.113 0.138 Ang. -40.8 -59.5 -76.2 -91.7 -106.8 -121.3 -133.8 -145.4 -155.7 -164.8 -175.0 176.0 165.7 153.9 142.7 129.9 119.8 110.4 101.6 S-PARAMETERS (BIASED @ 3.3V, 80mA) Freq (GHz) 0.60 0.90 1.20 1.50 1.80 2.10 2.40 2.70 3.00 3.30 3.60 3.90 4.20 4.50 4.80 5.10 5.40 5.70 6.00 S11 Mag. 0.852 0.755 0.671 0.605 0.556 0.525 0.502 0.487 0.475 0.465 0.459 0.458 0.459 0.464 0.469 0.479 0.492 0.506 0.524 Ang. -53.8 -76.0 -95.6 -112.6 -127.8 -141.4 -153.7 -164.7 -175.1 176.1 167.8 159.6 152.1 144.2 136.1 128.2 120.1 112.2 104.4 S21 Mag. 14.400 12.398 10.653 9.200 8.027 7.115 6.372 5.773 5.272 4.868 4.522 4.246 4.006 3.787 3.588 3.408 3.246 3.094 2.937 S12 Ang. 137.0 120.7 107.5 96.4 86.7 78.1 70.3 63.0 56.2 49.6 43.2 37.0 30.6 24.2 17.8 11.5 5.1 -1.5 -8.0 Mag. 0.029 0.039 0.048 0.056 0.063 0.071 0.078 0.085 0.091 0.098 0.105 0.112 0.119 0.126 0.132 0.138 0.144 0.149 0.153 S22 Ang. -38.6 -55.1 -69.8 -82.8 -96.3 -109.7 -121.0 -132.3 -141.3 -149.7 -159.5 -167.0 -177.9 169.0 154.1 137.9 125.7 114.4 105.2 9 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD750SOT343 Datasheet v3.0 PACKAGE OUTLINE: (dimensions in millimeters – mm) SOURCE DRAIN GATE SOURCE TAPE DIMENSIONS AND PART ORIENTATION FWYN FWYN ● Leader tape with empty Cavities = 350mm(min.) ● Trailer tape with empty Cavities = 160mm(min.) ● Devices per reel = 3000 10 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD750SOT343 Datasheet v3.0 profile defined within IPC/JEDEC J-STD-020C, Moisture / Reflow sensitivity classification for non-hermetic solid state surface mount devices PCB FOOT PRINT APPLICATION NOTES & DESIGN DATA: Application Notes and design data including Sparameters, noise parameters and device model are available on request. RELIABILITY: A MTTF of 4.2 million hours at a channel temperature of 150°C is achieved for the process used to manufacture this device. Units in inches DISCLAIMERS: This product is not designed for use in any space based or life sustaining/supporting equipment. PREFERRED ASSEMBLY INSTRUCTIONS: ORDERING INFORMATION: This package is compatible with both lead free and leaded solder reflow processes as defined within IPC/JEDEC J-STD-020C. The maximum package temperature should not exceed 260°C. HANDLING PRECAUTIONS: PART NUMBER DESCRIPTION FPD750SOT343 Packaged pHEMT FPD750SOT343E Lead free Packaged pHEMT RoHS Compliant Packaged pHEMT To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. FPD750SOT343CE with enhanced passivation (Recommended for New Designs) ESD/MSL RATING: EB750SOT343-BB 0.9 GHz evaluation board EB750SOT343-BA 1.85 GHz evaluation board EB750SOT343-BC 2.0 GHz evaluation board EB750SOT343-BE 2.4 GHz evaluation board EB750SOT343-BG 2.6 GHz evaluation board EB750SOT343-AH 3.5 GHz evaluation board These devices should be treated as Class 1A (250V - 500V) using the human body model as defined in JEDEC Standard No. 22-A114. The device has a MSL rating of Level 1. To determine this rating, preconditioning was performed to the device per, the Pb-free solder 11 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com