FPD1500DFN Datasheet v2.1 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES (1850MHZ): • • • • • • 27 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 45% Power-Added Efficiency RoHS compliant (Directive 2002/95/EC) GENERAL DESCRIPTION: TYPICAL APPLICATIONS: The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 750 µm Schottky barrier Gate, defined by high-resolution stepperbased photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels. • • • Drivers or output stages in PCS/Cellular base station transmitter amplifiers High intercept-point LNAs WLL and WLAN systems, and other types of wireless infrastructure systems. ELECTRICAL SPECIFICATIONS: PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Power at 1dB Gain Compression P1dB VDS = 5 V; IDS = 50% IDSS 27 dBm Small-Signal Gain SSG VDS = 5 V; IDS = 50% IDSS 18 dB Power-Added Efficiency PAE VDS = 5 V; IDS = 50% IDSS; 45 % 1.2 dB Matched for optimal power 40 dBm Matched for best IP3 42 POUT = P1dB Noise Figure NF VDS = 5 V; IDS = 50% IDSS Output Third-Order Intercept Point IP3 VDS = 5V; IDS = 50% IDSS (from 15 to 5 dB below P1dB) Saturated Drain-Source Current IDSS VDS = 1.3 V; VGS = 0 V 375 465 550 mA Maximum Drain-Source Current IMAX VDS = 1.3 V; VGS ≅ +1 V 750 mA Transconductance GM VDS = 1.3 V; VGS = 0 V 400 mS Gate-Source Leakage Current IGSO VGS = -5 V 1 15 μA Pinch-Off Voltage |VP| VDS = 1.3 V; IDS = 1.5 mA 0.7 0.9 1.3 V Gate-Source Breakdown Voltage |VBDGS| IGS = 1.5 mA 12 16 V Gate-Drain Breakdown Voltage |VBDGD| IGD = 1.5 mA 12 16 V Note: TAMBIENT = 22°; RF specification measured at f = 1850 MHz using CW signal (except as noted) 1 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD1500DFN Datasheet v2.1 1 ABSOLUTE MAXIMUM RATING : PARAMETER SYMBOL TEST CONDITIONS ABSOLUTE MAXIMUM Drain-Source Voltage VDS -3V < VGS < +0V 8V Gate-Source Voltage VGS 0V < VDS < +8V -3V Drain-Source Current IDS For VDS > 2V IDss Gate Current IG Forward or reverse current 15mA RF Input Power PIN Under any acceptable bias state 350mW Channel Operating Temperature TCH Under any acceptable bias state 175°C Storage Temperature TSTG Non-Operating Storage -40°C to 150°C Total Power Dissipation PTOT See De-Rating Note below 2.2W Comp. Under any bias conditions 5dB 2 Gain Compression 3 Simultaneous Combination of Limits 2 or more Max. Limits Notes: 1 TAmbient = 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause permanent damage to the device 2 Max. RF Input Limit must be further limited if input VSWR > 2.5:1 3 Users should avoid exceeding 80% of 2 or more Limits simultaneously 4 Total Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power Total Power Dissipation to be de-rated as follows above 22°C: PTOT= 2.2 - (0.0167W/°C) x TPACK where TPACK= source tab lead temperature above 22°C (coefficient of de-rating formula is the Thermal Conductivity) Example: For a 65°C carrier temperature: PTOT = 2.2W – (0.0167 x (65 – 22)) = 1.48mW 5 The use of a filled via-hole directly beneath the exposed heatsink tab on the bottom of the package is strongly recommended to provide for adequate thermal management. Ideally the bottom of the circuit board is affixed to a heatsink or thermal radiator BIASING GUIDELINES: • • • Active bias circuits provide good performance stabilization over variations of operating temperature, but require a larger number of components compared to self-bias or dual-biased. Such circuits should include provisions to ensure that Gate bias is applied before Drain bias, otherwise the pHEMT may be induced to self-oscillate Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage supply for depletion-mode devices. For standard Class A operation, a 50% of IDSS bias point is recommended. A small amount of RF gain expansion prior to the onset of compression is normal for this operating point. Note that pHEMTs, since they are “quasi- E/D mode” devices, exhibit Class AB traits when operated at 50% of IDSS. To achieve a larger separation between P1dB and IP3, an operating point in the 25% to 33% of IDSS range is suggested. Such Class AB operation will not degrade the IP3 performance. 2 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD1500DFN Datasheet v2.1 TYPICAL TUNED RF PERFORMANCE: FPD1500DFN Biased @ VD = 5V ID = 50%IDSS FPD1500DFN Biased @ VD = 5V, ID = 50%IDSS 35 1.5 MSG 10 0.75 0.5 0.25 5 0 10.4 11.4 12 0.5 18.0 17.0 SSG (dB) P1dB (dBm) 4.5 5 5.5 6 1.60 1.30 1.00 0.70 N.F. (dB) 0.40 90 80 70 60 50 40 30 20 0 10 15.0 -10 2.5 3 3.5 4 Frequency (GHz) 90 19.0 -20 2 1.90 -20 20.0 Noise Figure (dB) 32.0 31.0 30.0 29.0 28.0 27.0 26.0 25.0 24.0 23.0 22.0 P1dB (dBm) 21.0 SSG (dB) 1.5 Biased @ 5V, 33%IDSS Data taken on Eval board @ 1.85GHz Biased @ 5V, 50%IDSS Data taken on Eval Board at 1.85GHz 16.0 1 80 9.4 60 8.4 50 5.4 6.4 7.4 Frequency (GHz) 40 4.4 30 3.4 20 2.4 10 1.4 70 0 0.4 0 15 1 -10 & 20 1.25 S21 Noise Fugure (dB) MSG 25 Mag S21 30 Temperature (C) Temperature (C) BIAS RESPONSE: Gain & P1dB vs Vd Taken @ IDS = 50% IDSS Gain & P1dB vs % IDSS Taken @ VD = 5V 18.0 32.0 18.0 30.0 17.0 28.0 30.0 15.0 20.0 18.0 SSG (dB) P1dB (dBm) 12.0 45% 35% 20.0 15% 8.00 7.50 7.00 6.50 6.00 5.50 5.00 4.50 4.00 22.0 12.0 10.0 3.50 SSG (dB) P1dB (dBm) 13.0 14.0 12.0 3.00 24.0 14.0 16.0 13.0 2.50 26.0 15.0 25% 14.0 16.0 65% 22.0 P1dB (dBm) 24.0 2.00 SSG (dB) 16.0 SSG (dB) 26.0 P1dB (dBm) 28.0 55% 17.0 %IDSS Vd (V) 3 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD1500DFN Datasheet v2.1 TYPICAL OUTPUT PLANE CONTOURS (VDS = 5V, IDS = 50%IDSS): Swp Max 114 2. 0 0. 6 0.8 1.0 FPD1500DFN POWER CONTUORS 900MHz 0. 0 3. 4 4.0 5 .0 0.2 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0 0.2 10.0 28dBm 27dBm -10 .0 21dBm 26dBm 25dBm 24dBm 23dBm -4 . 0 -3 .0 .4 Swp Min 1 -1.0 -0.8 -0. 6 .0 -2 -0 22dBm - 5. 0 - 0.2 Swp Max 159 2. 0 0.6 0.8 1.0 FPD1500DFN POWER CONTUORS 1850MHz 0. 4 3 .0 4. 0 5.0 0.2 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 0 10.0 10.0 28dBm 27dBm -10.0 26dBm 21dBm 25dBm 24dBm 22dBm -5.0 - 4. - 0.2 0 23dBm -3 .0 -1.0 -0.8 -0. 6 .0 -2 .4 -0 Swp Min 1 4 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD1500DFN Datasheet v2.1 TYPICAL I-V CHARACTERISTICS: DC IV Curves FPD750SOT89 0.30 Drain-Source Current (A) 0.25 0.20 VG=-1.50 VG=-1.25V VG=-1.00V VG=-0.75V VG=-0.50V VG=-0.25V VG=0V 0.15 0.10 Recommendation: Traditionally a device’s IDSS rating (IDS at VGS = 0V) was used as a predictor of RF power, and for MESFETs there is a correlation between IDSS and P1dB (power at 1dB gain compression). For pHEMTs it can be shown that there is no meaningful statistical correlation between IDSS and P1dB; specifically a linear regression analysis shows r2 < 0.7, and the regression fails the F-statistic test. IDSS is sometimes useful as a guide to circuit tuning, since the S22 does vary with the quiescent operating point IDS. 0.05 0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Note: The recommended method for measuring IDSS, or any particular IDS, is to set the Drain-Source voltage (VDS) at 1.3V. This measurement point avoids the onset of spurious self-oscillation which would normally distort the current measurement (this effect has been filtered from the I-V curves presented above). Setting the VDS > 1.3V will generally cause errors in the current measurements, even in stabilized circuits. 6.0 Drain-Source Voltage (V) 5 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD1500DFN Datasheet v2.1 NOISE PARAMETERS: Bias 3V, 50%IDSS Bias 5V, 25%IDSS Γopt Freq (GHz) Mag Angle 0.900 1.800 2.000 2.200 2.400 2.600 2.800 3.000 3.500 4.000 4.500 5.000 5.500 6.000 0.345 0.384 0.401 0.448 0.463 0.483 0.482 0.503 0.487 0.513 0.506 0.521 0.563 0.570 18.350 86.350 97.050 116.200 129.200 137.900 146.800 149.850 160.750 172.500 177.500 -172.250 -160.450 -153.650 Γopt Freq Rn/50 0.029 0.043 0.039 0.032 0.031 0.034 0.022 0.022 0.023 0.020 0.035 0.027 0.031 0.041 Rn/50 (GHz) Mag Angle 0.900 1.800 2.000 2.200 2.400 2.600 2.800 3.000 3.500 4.000 4.500 5.000 5.500 6.000 0.367 0.416 0.445 0.454 0.450 0.502 0.467 0.475 0.478 0.495 0.490 0.497 0.544 0.558 27.250 75.400 80.800 103.150 125.500 129.550 135.950 142.050 151.550 163.200 168.500 179.700 -168.300 -161.200 0.030 0.046 0.042 0.035 0.034 0.028 0.023 0.023 0.024 0.020 0.034 0.024 0.023 0.028 Bias 5V, 50%IDSS Γopt Freq Rn/50 (GHz) Mag Angle 0.900 1.800 2.000 2.200 2.400 2.600 2.800 3.000 3.500 4.000 4.500 5.000 5.500 6.000 0.181 0.283 0.346 0.400 0.426 0.450 0.445 0.485 0.470 0.492 0.500 0.509 0.554 0.568 73.550 91.250 100.550 119.700 131.450 136.800 148.400 156.550 163.800 175.300 -178.800 -169.350 -158.100 -150.900 0.038 0.051 0.047 0.038 0.036 0.039 0.028 0.026 0.029 0.026 0.042 0.036 0.042 0.054 6 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD1500DFN Datasheet v2.1 S-PARAMETERS: Biased @ 5V, 50%IDSS FREQ[GHz] S11m S11a S21m S21a S12m S12a S22m S22a 0.500 1.000 1.500 2.000 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 6.500 7.000 7.500 8.000 8.500 9.000 9.500 10.000 10.500 11.000 11.500 12.000 0.841 0.770 0.770 0.760 0.775 0.773 0.768 0.765 0.759 0.753 0.751 0.761 0.766 0.769 0.760 0.756 0.759 0.771 0.768 0.775 0.803 0.800 0.808 0.817 -91.2 -134.6 -157.8 -173.0 176.0 168.8 163.2 158.2 152.8 145.2 138.5 131.1 124.7 118.9 113.7 108.6 103.5 97.8 93.1 87.6 82.4 76.0 69.5 63.9 19.661 12.134 8.561 6.590 5.303 4.514 3.898 3.471 3.160 2.878 2.625 2.407 2.204 2.018 1.845 1.717 1.643 1.573 1.510 1.453 1.419 1.328 1.275 1.208 126.2 102.2 87.3 77.3 68.3 61.0 53.4 46.6 39.0 32.1 24.9 17.7 10.3 3.7 -2.6 -7.8 -13.6 -19.1 -25.8 -32.5 -39.8 -47.2 -53.2 -59.7 0.023 0.031 0.037 0.040 0.045 0.051 0.056 0.064 0.069 0.076 0.084 0.089 0.092 0.097 0.100 0.105 0.113 0.121 0.136 0.145 0.155 0.164 0.170 0.177 51.0 41.1 38.0 35.6 38.0 35.7 35.0 32.2 32.4 29.2 24.8 20.4 14.8 10.3 6.7 6.2 3.1 -1.7 -5.3 -12.3 -17.9 -22.5 -27.9 -32.2 0.294 0.308 0.317 0.324 0.339 0.345 0.349 0.355 0.365 0.372 0.377 0.380 0.385 0.388 0.392 0.396 0.408 0.418 0.428 0.451 0.465 0.475 0.489 0.502 -137.3 -159.7 -168.0 -175.2 179.6 173.0 166.4 159.1 154.0 148.1 145.1 140.3 135.0 129.1 123.8 120.8 117.8 114.3 110.0 104.3 97.9 91.1 86.5 79.2 7 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD1500DFN Datasheet v2.1 REFERENCE DESIGN (5.3 – 5.9GHZ) Vd -Vg 1.0uF 1.0uF FPD1500DFN EVAL Board Schematic 15pF 15pF 20 Ohm Z16 Z10 Z15 Z9 1 RF IN (50 Ohm) Z5 Z1 15pF Z0 2 4 1 3 Z2 Z1 Z3 2 4 1 3 Z4 Z14 Z8 Z6 2 4 1 Z12 3 Z7 Z11 Desc. Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z16 Z11, Z12 Z13 Z14 Z15 Z17 Z18 Z19 15pF 3 Z13 Z17 Z18 Z19 RF OUT (50 Ohm) Z14 Z8 Z5 2 4 Value 0.045" x 0.050" Microstrip 0.020" x 0.500" Microstrip W1=0.020" W2=0.020" W3=0.020" W4=0.020" Microstrip Cross 0.020" x 0.030" Microstrip W1=0.020" W2=0.052" W3=0.020" W4=0.052" Microstrip Cross 0.052" x 0.94" Microstrip 0.020" x 0.285" Microstrip W1=0.020" W2=0.054" W3=0.020" W4=0.054" Microstrip Cross 0.054" x 0.166" Microstrip 0.015" x 0.166" Microstrip 0.310" x 90° Microstrip Radial Stub 0.350" x 90° Microstrip Radial Stub 0.012" x 0.037" Microstrip W1=0.020" W2=0.040" W3=0.020" W4=0.040" Microstrip Cross 0.040" x 0.175" Microstrip 0.015" x 0.157" Microstrip 0.020" x 0.180" Microstrip 0.060" x 0.050" Microstrip 0.042" x 0.220" Microstrip PARAMETER UNIT PERFORMANCE Frequency GHz 5.3 to 5.9 Gain dB 10.5 P1dB dBm 27 N.F. dB 1.5 OIP3 dBm 40 S11 dB -10 S22 dB -9 Vd V 5 Vg V -0.4 to -0.7 Id mA 200 8 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD1500DFN Datasheet v2.1 EVALUATION BOARD: PCB FOOTPRINT: 9 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD1500DFN Datasheet v2.1 PACKAGE OUTLINE: (dimensions in millimeters – mm) PREFERRED ASSEMBLY INSTRUCTIONS: DISCLAIMERS: Please contact Filtronic Compound Semiconductors Ltd for further details. This product is not designed for use in any space based or life sustaining/supporting equipment. HANDLING PRECAUTIONS: ORDERING INFORMATION: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V) as defined in JEDEC Standard No. 22-A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. PART NUMBER DESCRIPTION FPD1500DFN Packaged pHEMT EB1500DFN-BB Packaged pHEMT eval board – 900MHz EB1500DFN-BA Packaged pHEMT eval board – 1.85GHz EB1500DFN-BC Packaged pHEMT eval board – 2.0GHz EB1500DFN-BE Packaged pHEMT eval board – 2.4GHz EB1500DFN-AJ Packaged pHEMT eval board – 5.3 to 5.75GHz APPLICATION NOTES & DESIGN DATA: Application Notes and design data including Sparameters are available; please contact Filtronic Compound Semiconductors Ltd. 10 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com