SPECIFICATION Device Name : IGBT Module Type Name : 2MBI400TB-060 Spec. No. : MS5F 5293 Fuji Electric Co.,Ltd. Matsumoto Factory Oct. 22 '02 Y.Kobayashi Oct. 23 '02 T.Miyasaka K.Yamada T.Fujihira MS5F 5293 1 14 a b c H04-004-07 Revised Records Date Classification Oct.-23-'02 enactment Nov.-29-'02 Revision a Jan.-31-'03 Revision b Ind. Content Applied date Drawn T.Miyasaka Issued date Revised Reliability test condition (P7/14) K.Yamada Y.Kobayashi Revised characteristics curve up to 800A Checked Y.Kobayashi (P11/14, 12/14) T.Miyasaka K.Yamada T.Miyasaka K.Yamada Approved T.Fujihira T.Fujihira T.Fujihira Revised ton,tr,toff,tf Apr.-07-'04 Revision c (P4/14) Revised Rth curve Y.Kobayashi (P12/14) MS5F 5293 T.Miyasaka Y.Seki K.Yamada 2 14 a b c H04-004-06 2MBI400TB-060 1. Outline Drawing ( Unit : mm ) 2. Equivalent circuit MS5F 5293 3 14 a b c H04-004-03 3. Absolute Maximum Ratings ( at Tc= 25℃ unless otherwise specified ） Items Symbols Maximum Ratings 600 Conditions Collector-Emitter voltage VCES Gate-Emitter voltage VGES ±20 Ic Duty=100 % 400 Ic pulse IF 1ms 800 Duty=56 % 1ms 400 IF pulse Collector Power Dissipation Pc 1 device 1270 W Junction temperature Tj 150 ℃ Storage temperature Tstg -40~ +125 ℃ Collector current (*1) Ic=1mA Units Viso V V A 800 2500 V Mounting(*2) 3.5 Nm Terminals (*2) 3.5 Isolation voltage Screw Torque AC : 1min. (*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : Mounting 2.5~3.5 N m (M5) Terminal 2.5~3.5Nm (M5) 4. Electrical characteristics ( at Tj= 25℃ unless otherwise specified) Characteristics Items Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Symbols Conditions Max. Units V GE = 0 V, V CE = 600 V - - 2.0 mA IGES V CE = 0 V, V GE = ±20 V - - 400 nA V GE(th) V CE = 20 V, Ic = 400 mA 6.2 6.7 7.7 V - 1.9 2.2 30000 2.5 - V - 5200 - pF - 4500 - 0.4 1.2 0.2 0.6 VCE(sat) V GE = Ic = Cies VGE = Coes V CE = Reverse transfer capacitance Cres f= 15 V 400 A 0V Chip Terminal 10 V 1 MHz Vcc = 300 V - c Ic = 400 A - c tr(i) V GE = ±15 V - toff RG = 6.8 - c 0.55 1.2 - c 0.05 0.45 ton tr Turn-off time typ. ICES Output capacitance Turn-on time min. tf Forward on voltage Reverse recovery time VF trr IF = IF = 0.1 - μs Chip - 1.75 - Terminal - 1.9 2.5 - - 0.3 μs 200 - - mJ Max. Units 400 A 400 A V Allowabe avalanche energy during short circuit cutting off PAV Ic > 800A, Tj = 125℃ (Non-repetitive) 5. Thermal resistance characteristics Characteristics Items Symbols Conditions Thermal resistance (1 device) Rth(j-c) IGBT FWD Contact Thermal resistance Rth(c-f) With thermal compound min. typ. - - - 0.025 ※ 0.098 0.19 ℃/Ｗ - * This is the value which is defined mounting on the additional cooling fin with thermal compound. MS5F 5293 4 14 a b c H04-004-03 6. Indication on module 2MBI400TB-060 400A 600V Place of manufucturing Lot No. 7. Applicable category This specification is applied to IGBT Module named 2MBI400TB-060 8. Storage and transportation notes ・ The module should be stored at a standard temperature of 5 to 35Ｃ and humidity of 45 to 75% . ・ Store modules in a place with few temperature changes in order to avoid condensation on the module surface. ・ Avoid exposure to corrosive gases and dust. ・ Avoid excessive external force on the module. ・ Store modules with unprocessed terminals. ・ Do not drop or otherwise shock the modules when tranporting. ～ ～ 9. Definitions of switching time 90% 0V 0V V GE L trr Irr Ic 90% 10% 10% ～ ～ 0V 0A V CE Ic 90% Vcc RG ～ ～ VCE 10% VCE tr(i) V GE Ic tr tf toff ton MS5F 5293 5 14 a b c H04-004-03 10. Definition of the allowable avalance energy during short circuit cutfing of. -VCEP PAV= IC 1 2 ×VCEP×ICP×tf(SC) -ICP VCE tf(SC) 11. UL recognition This products is recognized by Underwriters Laboratories Inc., the file No. is E82988. 12. Packing and Labeling Packing box Display Display on the packing box - Logo of production - Type name - Lot No. - Products quantity in a packing box * Each modules are packed with electrical protection. MS5F 5293 6 14 a b c H04-004-03 13. Reliability test results Reliability Test Items Test categories Test items Mechanical Tests 1 Terminal Strength (Pull test) 2 Mounting Strength 3 Vibration 4 Shock Environment Tests 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressure Cooker 5 Temperature Cycle Reference Acceptnorms Number ance EIAJ of sample number ED-4701 Test methods and conditions Pull force Test time Screw torque : a 40N : 10±1 sec. : 2.5 ~ 3.5 N･m (M5) A - 111 Method 1 A - 112 Test time : 10±1 sec. Range of frequency : 10 ~ 500Hz Sweeping time : 15 min. Acceleration : a 10G Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) Maximum acceleration : 1000G Pulse width : 0.5msec. Direction : Each X,Y,Z axis Test time : 3 times/direction Storage temp. : 125±5 ℃ Test duration : 1000hr. Storage temp. : -40±5 ℃ Test duration : 1000hr. Storage temp. : 85±3 ℃ Relative humidity : 85±5% Test duration : 1000hr. Test temp. : 121 ℃ 5 (1:0) 5 (1:0) Method 2 A - 121 5 (1:0) A - 122 5 (1:0) B - 111 5 (1:0) B - 112 5 (1:0) B - 121 5 (1:0) B - 123 5 (1:0) B - 131 5 (1:0) B - 141 5 (1:0) 5 Atmospheric pressure : 2.03×10 Pa (Reference value) Test duration : 20hr. Test temp. : +3 -5 Low temp. -40 High temp. 125 +5 -5 ℃ ℃ Number of cycles RT 5 ~ 35 ℃ : High ~ RT ~ Low ~ RT 1hr. 0.5hr. 1hr. 0.5hr. : 100 cycles Test temp. : Dwell time 6 Thermal Shock High temp. 100 +0 -5 ℃ +5 -0 Low temp. 0 ℃ a Used liquid : Water with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles MS5F 5293 7 14 a b c H04-004-03 Reliability Test Items Test categories Test items Test methods and conditions 1 High temperature Reverse Bias +0 Test temp. Bias Voltage Bias Method Test duration 2 High temperature Bias Endurance Tests Reference Acceptnorms Number ance EIAJ of sample number ED-4701 +0 Test duration : Ta = 125 -5 ℃ (Tj ≦ 150 ℃) : VC = VGE = +20V or -20V : Applied DC voltage to G-E VCE = 0V : 1000hr. Test temp. Relative humidity Bias Voltage Bias Method : : : : Test duration ON time OFF time Test temp. : : : : Test temp. Bias Voltage Bias Method 3 Temperature Humidity Bias 4 Intermitted Operating Life (Power cycle) ( for IGBT ) D - 313 5 (1:0) D - 323 5 (1:0) B - 121 5 (1:0) D - 322 5 (1:0) : Ta = 125 -5 ℃ (Tj ≦ 150 ℃) : VC = 0.8×VCES : Applied DC voltage to C-E VGE = 0V : 1000hr. Number of cycles : o 85 +-3 C 85 +-5% VC = 0.8×VCES Applied DC voltage to C-E VGE = 0V 1000hr. 2 sec. 18 sec. Tj=100±5 deg Tj ≦ 150 ℃, Ta=25±5 ℃ 15000 cycles Failure Criteria Item Electrical characteristic Characteristic Leakage current Symbol - USL×2 USL×2 mA A Gate threshold voltage VGE(th) LSL×0.8 USL×1.2 mA Saturation voltage VCE(sat) - USL×1.2 V - USL×1.2 USL×1.2 V mV - USL×1.2 mV resistance VF VGE or FWD Isolation voltage inspection Unit ICES ±IGES Forward voltage Thermal IGBT Visual Failure criteria Lower limit Upper limit Note VCE VF Viso Broken insulation - - The visual sample - Visual inspection Peeling Plating and the others LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement. MS5F 5293 8 14 a b c H04-004-03 Reliability Test Results Test categories Test items Endurance Tests Environment Tests Mechanical Tests 1 Terminal Strength (Pull test) 2 Mounting Strength Reference Number norms of test EIAJ ED-4701 sample A - 111 Number of failure sample 5 0 5 0 Method 1 A - 112 Method 2 3 Vibration A - 121 5 0 4 Shock A - 122 5 0 1 High Temperature Storage B - 111 5 0 2 Low Temperature Storage B - 112 5 0 3 Temperature Humidity B - 121 5 0 B - 123 5 0 5 Temperature Cycle B - 131 5 0 6 Thermal Shock B - 141 5 0 1 High temperature Reverse Bias D - 313 5 0 2 High temperature Bias D - 323 5 0 3 Temperature Humidity Bias B - 121 5 0 4 Intermitted Operating Life D - 322 5 0 Storage 4 Unsaturated Pressure Cooker ( for gate ) (Power cycling) ( for IGBT ) MS5F 5293 9 14 a b c H04-004-03 [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25C (typ.) Collector current : Ic [ A ] 15V 12V VGE= 20V 800 1000 VGE= 20V 15V 800 Collector current : Ic [ A ] 1000 [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125C (typ.) 10V 600 400 200 12V 10V 600 400 200 8V 8V 0 0 0 1000 1 2 3 5 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C (typ.) 12 Tj= 25C Tj= 125C 10 Collector - Emitter voltage : VCE [ V ] 800 Collector current : Ic [ A ] 4 600 400 200 0 8 6 4 Ic=800A 2 Ic=400A Ic=200A 0 0 1 2 3 4 5 10 Collector - Emitter voltage : VCE [ V ] 20 25 [ Inverter ] Dynamic Gate charge (typ.) Vcc=300V, Ic=400A, Tj= 25C [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 50000 15 Gate - Emitter voltage : VGE [ V ] 500 25 400 20 300 15 200 10 100 5 10000 5000 Coes Cres 1000 500 0 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] 30 35 0 200 400 600 800 1000 1200 1400 Gate - Emitter voltage : VGE [ V ] Collector - Emitter voltage : VCE [ V ] Capacitance : Cies, Coes, Cres [ pF ] Cies 0 1600 Gate charge : Qg [ nC ] MS5F 5293 10 14 a b c H04-004-03 b 1000 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=+-15V, Rg=6.8ohm, Tj= 25C b 1000 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=+-15V, Rg= 6.8ohm, Tj= 125C ton toff Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] toff ton tr tf 100 tr 10 0 200 400 600 800 tf 100 10 1000 0 200 Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=400A, VGE=+-15V, Tj= 25C b Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 5000 ton toff 1000 tr 100 400 600 800 1000 Collector current : Ic [ A ] tf [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=300V, VGE=+-15V, Rg=6.8ohm 30 Eoff(125C) Eoff(25C) Eon(125C) 20 Eon(25C) 10 Err(125C) Err(25C) 10 0 1 10 50 0 200 Gate resistance : Rg [ ohm ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=400A, VGE=+-15V, Tj= 125C 70 1000 Eon 600 800 1000 [ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE<=15V, Rg>=6.8ohm, Tj<=125C 900 60 800 50 Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] 400 Collector current : Ic [ A ] Eoff 40 30 20 700 600 500 400 300 200 10 Err 100 0 0 5 10 Gate resistance : Rg [ ohm ] 100 0 200 400 600 800 Collector - Emitter voltage : VCE [ V ] MS5F 5293 11 14 a b c H04-004-03 b [ Inverter ] Forward current vs. Forward on voltage (typ.) b 900 300 [ Inverter ] Reverse recovery characteristics (typ.) Vcc=300V, VGE=+-15V, Rg=6.8ohm 800 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 700 600 500 Tj=25C Tj=125C 400 300 200 trr(125C) Irr(125C) trr(25C) Irr(25C) 100 100 0 30 0 1 2 3 0 Forward on voltage : VF [ V ] c 200 400 600 800 1000 Forward current : IF [ A ] Transient thermal resistance Thermal resistanse : Rth(j-c) [ C/W ] 1 FWD IGBT 0.1 0.01 1E-3 0.001 0.01 0.1 1 Pulse width : Pw [ sec ] MS5F 5293 12 14 a b c H04-004-03 Warnings - This product shall be used within its abusolute maximun rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. 製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。 絶対最大定格を超えて使用すると、素子が破壊する場合があります。 - Conect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction. 万一の不慮の事故で素子が破壊した場合を考慮し、商用電源と本製品の間に適切な容量のヒューズ 又はブレーカーを必ず付けて２次破壊を防いでください。 - Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. 製品の使用環境を十分に把握し、製品の信頼性寿命が満足できるか検討の上、本製品を適用して下さい。 製品の信頼性寿命を超えて使用した場合、装置の目標寿命より前に素子が破壊する場合があります。 - If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. 酸・有機物・腐食性ガス（硫化水素，亜硫酸ガス等）を含む環境下で使用された場合、製品機能・外観などの保証は 致しかねます。 - Use this product within the power cycle curve(Thechnical Rep.No:MT6M4057) 本製品は、パワーサイクル寿命カーブ以下で使用下さい（技術資料No.:MT6M4057） - Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact probrem. 主端子及び制御端子に応力を与えて変形させないで下さい。 端子の変形により、接触不良などを引き起こす場合 があります。 - According to the outline drawing, select proper length of screw for main terminal. Longer screws may break the case. 本製品に使用する主端子用のネジの長さは、外形図に従い正しく選定下さい。 ネジが長いとケースが破損する場合があります。 - Use this product with keeping the cooling fin's flatness between screw holes within 100um and the rouphness within 10um. Also keep the tightening torque within the limits of this specification. Improper handling may cause isolation breakdown and this may lead to a cirtical accident. 冷却フィンはネジ取り付け位置間で平坦度を100um以下、表面の粗さは10um以下にして下さい。 誤った取り扱 いをすると絶縁破壊を起こし、重大事故に発展する場合があります。 - It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA specification. This product may be broken if the locus is out of the RBSOA. ターンオフ電圧・電流の動作軌跡がRBSOA仕様内にあることを確認して下さい。 RBSOAの範囲を超えて使用すると素子が破壊する可能性があります。 - If excessive static electricity is applied to the control terminals, the devices can be broken. Implement some countermeasures against static electricity. 制御端子に過大な静電気が印加された場合、素子が破壊する場合があります。 取り扱い時は静電気対策を実施して下さい。 MS5F 5293 13 14 a b c H04-004-03 Cautions - Fuji Electric is constantly making every endeavor to improve the product quality and reliability. However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injuly or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. 富士電機は耐えず製品の品質と信頼性の向上に努めています。しかし、半導体製品は故障が発生したり、 誤動作する場合があります。富士電機製半導体製品の故障または誤動作が、結果として人身事故・火災 等による財産に対する損害や社会的な損害を起こさないように冗長設計・延焼防止設計・誤動作防止設計 など安全確保のための手段を講じて下さい。 - The application examples described in this specification only explain typical ones that used the Fuji Electric products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. 本仕様書に記載してある応用例は、富士電機製品を使用した代表的な応用例を説明するものであり、本仕様書 によって工業所有権、その他権利の実施に対する保障または実施権の許諾を行うものではありません。 - The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine ralaying equipment or systems, please apply after confirmation of this product to be satisfied about system construction and required reliability. 本仕様書に記載された製品は、人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを 目的として設計・製造されたものではありません。本仕様書の製品を車両機器、船舶、航空宇宙、医療機器、原子力 制御、海底中継機器あるいはシステムなど、特殊用途へのご利用をご検討の際は、システム構成及び要求品質に 満足することをご確認の上、ご利用下さい。 If there is any unclear matter in this specification, please contact Fuji Electric Co.,Ltd. MS5F 5293 14 14 a b c H04-004-03