SPECIFICATION Device Name : IGBT Module (RoHS compliant product) Type Name Spec. No. Feb. 23 ’07 : : 6MBI35U4A-120-50 MS5F06818 S.Ogawa Feb. 23 ’07 S.Igarashi K.Yamada T.Miyasaka MS5F06818 a 1 14 H04-004-07b R e v i s e d Date Classification Ind. R e c o r d s Content Revision Drawn Issued date Feb -23-’07 Enactment May.-15-’07 Applied date a Revised Electrical characteristics. (P4/14) H.Endo Checked Checked Approved S.Igarashi K.Yamada T.Miyasaka S.Igarashi K.Yamada MS5F06818 T.Miyasaka a 2 14 H04-004-06b 6MBI35U4A-120-50 (RoHS compliant product) 1. Outline Drawing ( Unit : mm ) 2. Equivalent circuit [ Thermistor ] [ Inverter ] 15,1 6 25,2 6 1 2 5 6 U 23,24 3 4 27,2 8 18 9 10 V 21,22 7 8 17 W 19,20 11 12 13,1 4 MS5F06818 a 3 14 H04-004-03a 3.Absolute Maximum Ratings ( at Tc= 25°C unless other wise specified ) Items Symbols Inverter Collector-Emitter voltage Gate-Emitter voltage Units 1200 ±20 V V Ic Continuous Tc=25°C Tc=80°C 50 35 Icp 1ms Tc=25°C Tc=80°C 100 70 -Ic -Ic pulse 1ms Collector Power Dissipation Junction temperature Pc Tj Storage temperature Isolation between terminal and copper base (*1) voltage between thermistor and others (*2) Mounting Maximum Ratings VCES VGES Collector current Screw Torque Conditions 35 70 1 device 205 150 Tstg Viso (*3) A W °C -40 ~ +125 AC : 1min. - 2500 VAC 3.5 Nm (*1) All terminals should be connected together when isolation test will be done. (*2) Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. (*3) Recommendable Value : 2.5~3.5 Nm (M5) 4. Electrical char acteristics ( at Tj= 25°C unless other wise specified) Items Zero gate voltage Collector current ICES Gate-Emitter leakage current IGES Gate-Emitter threshold voltage Inverter Collector-Emitter saturation voltage Conditions min. VGE = 0V VCE = 1200V VCE = 0V VGE=±20V Char acter istics typ. max. - 1.0 mA - - 200 nA 5.5 6.5 7.1 V a VGE(th) VCE = 20V Ic = 35mA VCE(sat) (terminal) VGE=15V Tj= 25°C Tj=125°C - 2.05 2.25 2.20 - VCE(sat) (chip) Ic = 35A Tj= 25°C Tj=125°C - 1.90 2.10 2.05 - Cies VCE=10V,VGE=0V,f=1MHz - 2.65 - Turn-on time ton tr Vcc = 600V Ic = 35A - 0.32 0.18 1.20 0.60 tr (i) toff VGE=±15V Rg = 33 Ω - 0.03 0.39 1.00 Tj= 25°C - 0.14 1.75 0.30 2.05 Tj=125°C - 1.85 - Tj= 25°C Tj=125°C - 1.60 1.70 1.85 - - 5000 0.35 - 465 3305 495 3375 520 3450 Forward on voltage tf VF (terminal) VGE=0V VF (chip) IF = 35A Reverse recovery time trr Resistance R B value B IF = 35A T = 25°C T =100°C T = 25/50°C Units - Input capacitance Turn-off time Thermistor Symbols MS5F06818 V nF μs V μs Ω K a 4 14 H04-004-03a 5. Ther mal r esistance char acter istics Items Symbols Thermal resistance(1device) Contact Thermal resistance (1device) (*4) Char acter istics min. typ. max. Conditions Rth(j-c) Inverter IGBT Inverter FWD - - 0.60 0.88 Rth(c-f) with Thermal Compound - 0.05 - Units °C/W (*4) This is the value which is defined mounting on the additional cooling fin with thermal compound. 6. Indication on module Display on the module label - Logo of production - Type neme: 6MBI35U4A-120-50 - IC, VCES rating: 35A 1200V - Lot No (5 digits) - Place of manufacturing (code) - Bar code 7. Applicable categor y This specification is applied to Power Integrated Module named 6MBI35U4A-120-50. 8. Stor age and tr anspor tation notes • The module should be stored at a standard temperature of 5 to 35oC and humidity of 45 to 75% . Be careful to solderability of the terminals if the module has passed over one year from manufacturing date, under the above storage condition. • Store modules in a place with few temperature changes in order to avoid condensation on the module surface. • Avoid exposure to corrosive gases and dust. • Avoid excessive external force on the module. • Store modules with unprocessed terminals. • Do not drop or otherwise shock the modules when transporting. ～ ～ 9. Definitions of switching time 90% 0V 0V V GE L trr Irr Ic 90% 10% 10% ～ ～ 0V 0A V CE Ic 90% Vcc RG ～ ～ VCE 10% VCE tr(i) V GE Ic tr tf toff ton 10. Packing and Labeling Display on the packing box - Logo of production - Type name - Lot No - Products quantity in a packing box MS5F06818 a 5 14 H04-004-03a 11. List of mater ials (Total weight of soldering material(typ.): 4.4g) No. 1 Base Plate Parts 2 Terminal 3 4 5 6 7 8 9 10 Cover Case Isolation substrate IGBT chip Wiring Silicone Gel Adhesive Solder(Under chip) Solder (Under Isolation substrate ) Label FWD chip Ring Thermistor 11 12 13 14 15 Material (main) Ref. Cu Ni plating Ni plating (Internal) Cu Lead free solder plating (External) PPS resin UL 94V-0 PPS resin UL 94V-0 Al2O3 + Cu Silicon Aluminum Silicone resin Silicone resin Sn/Ag base (Not drawn in above) Sn/Ag base (Not drawn in above) Paper Silicon Fe Lead glass (Not drawn in above) Trivalent Chromate treatment 12. RoHS Dir ective Compliance 本IGBTモジュールは富士電機デバイステクロノジーが発行しているRoHSに関する資料MS5F6209 を適用する。日本語版（MS5F6212）は参考資料にする。 The document (MS5F6209) about RoHS that Fuji Electric Device Technology issued is applied to this IGBT Module. The Japanese Edition (MS5F6212) is made into a reference grade. MS5F06818 a 6 14 H04-004-03a 13. Reliability test results Reliability Test Items Mechanical Tests Test categories Test items Test methods and conditions (Aug.-2001 edition) 1 Terminal Strength (Pull test) 2 Mounting Strength Pull force Test time Screw torque Test time 3 Vibration Range of frequency : 10 ~ 500Hz Sweeping time : 15 min. Acceleration : 100m/s2 Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) Maximum acceleration : 5000m/s2 Pulse width : 1.0msec. Direction : Each X,Y,Z axis Test time : 3 times/direction Solder temp. : 245±5 ℃ Immersion time : 5±0.5sec. Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. Solder temp. : 260±5 ℃ Immersion time : 10±1sec. Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. Storage temp. : 125±5 ℃ Test duration : 1000hr. Storage temp. : -40±5 ℃ Test duration : 1000hr. Storage temp. : 85±2 ℃ Relative humidity : 85±5% Test duration : 1000hr. Test temp. : 120±2 ℃ Test humidity : 85±5% Test duration : 96hr. 4 Shock 5 Solderabitlity 6 Resistance to Soldering Heat 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressurized Vapor Environment Tests Reference Number Acceptnorms of ance EIAJ ED-4701 sample number 5 Temperature Cycle Test temp. : : : : : 20N 10±1 sec. 2.5 ~ 3.5 N･m (M5) 10±1 sec. Test Method 401 MethodⅠ Test Method 402 methodⅡ 5 (0:1) 5 (0:1) Test Method 403 Reference 1 Condition code B 5 (0:1) Test Method 404 Condition code B 5 (0:1) Test Method 303 Condition code A 5 (0:1) Test Method 302 Condition code A 5 (0:1) Test Method 201 5 (0:1) Test Method 202 5 (0:1) Test Method 103 Test code C 5 (0:1) Test Method 103 Test code E 5 (0:1) Test Method 105 5 (0:1) Test Method 307 method Ⅰ Condition code A 5 (0:1) Low temp. -40±5 ℃ High temp. 125 ±5 ℃ Number of cycles RT 5 ~ 35 ℃ : High ~ RT ~ Low ~ RT 1hr. 0.5hr. 1hr. 0.5hr. : 100 cycles Test temp. : Dwell time 6 Thermal Shock High temp. 100 +0 -5 +5 -0 ℃ Low temp. 0 ℃ Used liquid : Water with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles MS5F06818 a 7 14 H04-004-03a Reliability Test Items Test categories Test items Test methods and conditions (Aug.-2001 edition) 1 High temperature Reverse Bias Test temp. Bias Voltage Bias Method Endurance Endurance Tests Tests Reference Number Acceptnorms of ance EIAJ ED-4701 sample number Test duration 2 High temperature Bias (for gate) Test temp. Test duration : Ta = 125±5 ℃ (Tj ≦ 150 ℃) : VC = VGE = +20V or -20V : Applied DC voltage to G-E VCE = 0V : 1000hr. Test temp. Relative humidity Bias Voltage Bias Method : : : : Test duration ON time OFF time Test temp. : : : : Number of cycles : Bias Voltage Bias Method 3 Temperature Humidity Bias 4 Intermitted Operating Life (Power cycle) ( for IGBT ) Test Method 101 5 (0:1) Test Method 101 5 (0:1) Test Method 102 Condition code C 5 (0:1) Test Method 106 5 (0:1) : Ta = 125±5 ℃ (Tj ≦ 150 ℃) : VC = 0.8×VCES : Applied DC voltage to C-E VGE = 0V : 1000hr. o 85±2 C 85±5% VC = 0.8×VCES Applied DC voltage to C-E VGE = 0V 1000hr. 2 sec. 18 sec. Tj=100±5 deg Tj ≦ 150 ℃, Ta=25±5 ℃ 15000 cycles Failure Criteria Item Characteristic Symbol Electrical Leakage current ICES characteristic ±IGES Gate threshold voltage VGE(th) Saturation voltage VCE(sat) Forward voltage VF Thermal IGBT VGE resistance or VCE FWD VF Visual inspection Isolation voltage Visual inspection Peeling Plating and the others Failure criteria Unit Lower limit Upper limit LSL×0.8 - USL×2 USL×2 USL×1.2 USL×1.2 USL×1.2 USL×1.2 mA A mA V V mV - USL×1.2 mV Viso Broken insulation - - The visual sample - Note LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement. MS5F06818 a 8 14 H04-004-03a Reliability Test Results Test categories Test items (Aug.-2001 edition) 1 Terminal Strength (Pull test) 2 Mounting Strength Mechanical Tests Reference norms EIAJ ED-4701 Test Method 401 Number Number of test of failure sample sample 5 0 5 0 5 0 5 0 5 0 5 0 MethodⅠ Test Method 402 methodⅡ 3 Vibration Test Method 403 Condition code B 4 Shock Test Method 404 Condition code B 5 Solderabitlity Test Method 303 Condition code A 6 Resistance to Soldering Heat Test Method 302 Environment Tests Condition code A 1 High Temperature Storage Test Method 201 5 0 2 Low Temperature Storage Test Method 202 5 0 3 Temperature Humidity Test Method 103 5 0 5 0 Storage Test code C 4 Unsaturated Pressurized Vapor Test Method 103 5 Temperature Cycle Test Method 105 5 0 6 Thermal Shock Test Method 307 5 0 Test code E method Ⅰ Endurance Tests Condition code A 1 High temperature Reverse Bias Test Method 101 5 0 2 High temperature Bias Test Method 101 5 0 Test Method 102 5 0 5 0 ( for gate ) 3 Temperature Humidity Bias Condition code C 4 Intermitted Operating Life Test Method 106 (Power cycling) ( for IGBT ) MS5F06818 a 9 14 H04-004-03a [ Inverter ] [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C / chip 80 80 15V VGE=20V 15V 12V 60 Collector current : Ic [A] Collector current : Ic [A] VGE=20V 10V 40 20 12V 60 10V 40 20 8V 8V 0 0 0 1 2 3 4 5 0 1 2 [ Inverter ] 5 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) VGE=15V / chip Tj=25°C / chip 10 Tj=25°C Collector - Emitter voltage : VCE [ V ] 80 Collector current : Ic [A] 4 [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj=125°C 60 40 20 8 6 4 Ic=70A Ic=35A Ic=17.5A 2 0 0 0 1 2 3 4 5 5 Collector-Emitter voltage : VCE [V] 15 20 [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) [ Inverter ] Dynamic Gate charge (typ.) VGE=0V, f= 1MHz, Tj= 25°C Vcc=600V， Ic=35A，Tj= 25°C Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Cies 1.0 Cres Coes 0.1 0 10 10 20 Collector-Emitter voltage : VCE [V] 25 Gate-Emitter voltage : VGE [V] 10.0 Capacitance : Cies, Coes, Cres [ nF ] 3 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] 30 VGE VCE 0 0 50 100 150 200 Gate charge : Qg [nC] MS5F06818 a 10 14 H04-004-03a [ Inverter ] [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=33Ω, Tj= 25°C Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=33Ω, Tj=125°C 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 1000 toff ton tr 100 tf tf ton 100 10 20 40 60 0 20 40 60 Collector current : Ic [A] Collector current : Ic [A] [ Inverter ] [ Inverter ] Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.) Vcc=600V, Ic=35A, VGE=±15V, Tj= 25°C Vcc=600V, VGE=±15V, Rg=33Ω Switching loss : Eon, Eoff, Err [mJ/pulse ] 10000 Switching time : ton, tr, toff, tf [ nsec ] tr 10 0 ton toff 1000 tr 100 tf 10 10.0 6 5 Eon(125°C) Eoff(125°C) Err(125°C) Eon(25°C) 4 3 Eoff(25°C) Err(25°C) 2 1 0 100.0 1000.0 0 10 20 30 40 50 60 70 Gate resistance : Rg [Ω] Collector current : Ic [A] [ Inverter ] Switching loss vs. Gate resistance (typ.) [ Inverter ] Reverse bias safe operating area (max.) Vcc=600V, Ic=35A, VGE=±15V, Tj= 125°C +VGE=15V,-VGE <= 15V, RG >= 33Ω ,Tj <= 125°C 15 80 10 Collector current : Ic [A] Switching loss : Eon, Eoff, Err [mJ/pulse ] toff 1000 Eon 5 Eoff 60 40 20 Err 0 10.0 0 100.0 Gate resistance : Rg [Ω] 1000.0 0 400 800 1200 Collector-Emitter voltage : VCE [V] MS5F06818 a 11 14 H04-004-03a [ Inverter ] [ Inverter ] Forward current vs. Forward on voltage (typ.) chip Reverse recovery characteristics (typ.) Vcc=600V, VGE=±15V, Rg=33Ω 1000 Tj=125°C 60 40 20 0 trr (125°C) 100 trr (25°C) Irr (125°C) Irr (25°C) 10 0 1 2 3 0 Forward on voltage : VF [V] 10 20 30 40 50 60 Forward current : IF [A] Transient thermal resistance (max.) 10.000 FW D[Inverter] 1.000 IGBT[Inverter] 0.100 0.010 0.001 0.010 0.100 1.000 Pulse width : Pw [sec] [ Thermistor ] Temperature characteristic (typ.) 100 Resistance : R [kΩ] Thermal resistanse : Rth(j-c) [ °C/W ] Forward current : IF [A] Tj=25°C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 80 10 1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Temperature [°C ] MS5F06818 a 12 14 H04-004-03a Warnings - This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. If Printed Circuit Board is not suitable, the main pin terminals may have higher temperature than Tstg. Also the pin terminals shall be used within Tstg. 製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。絶対最大定格を超えて使用すると、素子が破壊する 場合があります。また、使用するプリント板が不適切な場合、主端子ピンの温度がTstg以上になることがあります。主端子ピン もTstg範囲内でご使用下さい。 - Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction, such as fire, its spreading, or explosion. 万一の不慮の事故で素子が破壊した場合を考慮し、商用電源と本製品の間に適切な容量のヒューズ又はブレーカーを必ず 付けて火災，爆発，延焼等の２次破壊を防いでください。 - Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. 製品の使用環境を十分に把握し、製品の信頼性寿命が満足できるか検討の上、本製品を適用して下さい。製品の信頼性寿命 を超えて使用した場合、装置の目標寿命より前に素子が破壊する場合があります。 - If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. 酸・有機物・腐食性ガス（硫化水素，亜硫酸ガス等）を含む環境下で使用された場合、製品機能・外観等の保証はできません。 - Use this product within the power cycle curve (Technical Rep.No. : MT5F12959). Power cycle capability is classified to delta-Tj mode which is stated as above and delta-Tc mode. Delta-Tc mode is due to rise and down of case temperature (Tc), and depends on cooling design of equipment which use this product. In application which has such frequent rise and down of Tc, well consideration of product life time is necessary. 本製品は、パワーサイクル寿命カーブ以下で使用下さい(技術資料No.: MT5F12959)。パワーサイクル耐量にはこのΔTjによる 場合の他に、ΔTcによる場合があります。これはケース温度(Tc)の上昇下降による熱ストレスであり、本製品をご使用する際 の放熱設計に依存します。ケース温度の上昇下降が頻繁に起こる場合は、製品寿命に十分留意してご使用下さい。 - Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. 主端子及び制御端子に応力を与えて変形させないで下さい。 端子の変形により、接触不良などを引き起こす場合があります。 - Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the roughness within 10um. Also keep the tightening torque within the limits of this specification. Too large convex of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, too large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will be worse and over heat destruction may occur. 冷却フィンはネジ取り付け位置間で平坦度を100mmで100um以下、表面の粗さは10um以下にして下さい。 過大な凸反り があったりすると本製品が絶縁破壊を起こし、重大事故に発展する場合があります。また、過大な凹反りやゆがみ等があると、 本製品と冷却フインの間に空隙が生じて放熱が悪くなり、熱破壊に繋がることがあります。 - In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the thermal compound amount was not enough or its applying method was not suitable, its spreading will not be enough, then, thermal conductivity will be worse and thermal run away destruction may occur. Confirm spreading state of the thermal compound when its applying to this product. (Spreading state of the thermal compound can be confirmed by removing this product after mounting.) 素子を冷却フィンに取り付ける際には、熱伝導を確保するためのコンパウンド等をご使用ください。又、塗布量が不足したり、 塗布方法が不適だったりすると、コンパウンドが十分に素子全体に広がらず、放熱悪化による熱破壊に繋がる事があります。 コンバウンドを塗布する際には、製品全面にコンパウンドが広がっている事を確認してください。 (実装した後に素子を取りはずすとコンパウンドの広がり具合を確認する事が出来ます。) - It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA specification. This product may be broken if the locus is out of the RBSOA. ターンオフ電圧・電流の動作軌跡がRBSOA仕様内にあることを確認して下さい。RBSOAの範囲を超えて使用すると素子が破壊 する可能性があります。 MS5F06818 a 13 14 H04-004-03a W a rn in g s - If ex cessiv e static e le ctricity is app lied to the con tro l te rm ina ls, th e d ev ices m ay be bro ken. Im plem en t som e coun term ea sures against static e le ctricity. 制 御 端 子 に 過 大 な 静 電 気 が 印 加 さ れ た 場 合 、 素 子 が 破 壊 す る 場 合 が あ りま す 。 取 り 扱 い 時 は 静 電 気 対 策 を 実 施 し て 下 さ い 。 - Nev er ad d the excessiv e m echanical stre ss to the m a in or control term inals whe n the prod uct is app lied to equipm ents. T he m o dule structure m ay be broken. 素 子 を 装 置 に 実 装 す る 際 に 、 主 端 子 や 制 御 端 子 に 過 大 な 応 力 を 与 え な い で 下 さ い 。端 子 構 造 が 破 壊 す る 可 能 性 が あ りま す 。 - In case of insufficien t -V G E, erroneo us tu rn-on of IG BT m ay o ccu r. -V G E sh all be se t enough v a lue to p rev en t this m alfunction . (Recom m en ded v alue : -V GE = -1 5V) 逆 バ イ ア ス ゲ ー ト 電 圧 -VG Eが 不 足 し ま す と 誤 点 弧 を 起 こ す 可 能 性 が あ りま す 。誤 点 弧 を 起 こ さ な い 為 に -V G Eは 十 分 な 値 で 設 定 し て 下 さ い 。 （推 奨 値 : -V G E = -15V) - In case of higher turn-on d v /d t of IG B T , erro neous turn -on of oppo site arm IG B T m ay occur. U se th is p rodu ct in the m ost suita ble driv e conditio ns, such as +V G E , -VG E , RG to prev ent the m a lfunction. タ ー ン オ ン dv/dt が 高 い と 対 抗 ア ー ム の ＩＧ Ｂ Ｔが 誤 点 弧 を 起 こ す 可 能 性 が あ りま す 。 誤 点 弧 を 起 こ さ な い 為 の 最 適 な ド ライ ブ 条 件 （+V G E, -V G E, RG 等 ）で ご 使 用 下 さ い 。 - Th is p roduct m ay be broken by av alanche in case of VC E beyo nd m ax im um ra ting VC ES is ap plie d be tween C-E term inals. U se this produ ct within its absolute m axim um v olta ge. VC ESを 超 え た 電 圧 が 印 加 さ れ た 場 合 、 ア バ ラ ン シ ェ を 起 こ し て 素 子 破 壊 す る 場 合 が あ り ま す 。 VC Eは 必 ず 絶 対 定 格 の 範 囲 内 でご使 用 下 さい 。 - Lowe r + V G E decrease IG B T saturation curren t. + V G E sh all be set m ore or eq ual than 15V in case of m a xim um collector current to be 50A (2 tim es of Ic rating). If + VG E is less tha n 15 V, the prod uct m ay not b e ab le to flow 50A of colle cto r current. ゲ ー ト電 圧 が 低 い と IG B Tの コ レ ク タ 飽 和 電 流 は 下 が りま す 。 定 格 電 流 の 2倍 (50A )ま で 使 用 す る 場 合 は 、 ゲ ー ト 電 圧 を 15V 以 上 に 設 定 し て 下 さ い 。ゲ ー ト電 圧 が 15V未 満 で す と 、コ レ ク タ 飽 和 電 流 は 50Aに 達 し な い 可 能 性 が あ り ま す 。 - Incase of soldering this produ ct at e xcessiv e he at con dition, the package of this prod uct m ay be deteriora ted. P lease handle with care for soldering process. 製 品 を 過 大 な 温 度 で 半 田 付 け し た 場 合 、パ ッ ケ ー ジ の 劣 化 を 引 起 す 可 能 性 が あ り ま す 。 半 田 付 け プ ロ セ ス に 注 意 し て ご 使 用 くだ さ い 。 Cautions - Fuji Electric Dev ice Technology is constantly making ev ery endeav or to improv e the product quality and reliability. Howev er, semiconductor products may rarely happen to fail or malfunction. To prev ent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundant design, spread-fire-prev entiv e design, and malfunction-protective design. 富士電機デバイステクノロジーは絶えず製品の品質と信頼性の向上に努めています。しかし、半導体製品は故障が発生したり、 誤動作する場合があります。富士電機デバイステクノロジー製半導体製品の故障または誤動作が、結果として人身事故・火災 等による財産に対する損害や社会的な損害を起こさないように冗長設計・延焼防止設計・誤動作防止設計など安全確保 のための手段を講じて下さい。 - The application examples described in this specification only explain typical ones that used the Fuji Electric Device Technology products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. 本仕様書に記載してある応用例は、富士電機デバイステクノロジー製品を使用した代表的な応用例を説明するものであり、 本仕様書によって工業所有権、その他権利の実施に対する保障または実施権の許諾を行うものではありません。 - The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. W hen you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems, please apply after confirmation of this product to be satisfied about system construction and required reliability. 本仕様書に記載された製品は、人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを 目的として設計・製造されたものではありません。本仕様書の製品を車両機器、船舶、航空宇宙、医療機器、原子力 制御、海底中継機器あるいはシステムなど、特殊用途へのご利用をご検討の際は、システム構成及び要求品質に 満足することをご確認の上、ご利用下さい。 If there is any unclear matter in this specification, please contact Fuji Electric Dev ice Technology Co.,Ltd. MS5F06818 a 14 14 H04-004-03a