1214-30 30 Watts, 28 Volts, Pulsed Radar 1200 - 1400 MHz GENERAL DESCRIPTION The 1214-30 is an internally matched, COMMON BASE transistor capable of providing 30 Watts of pulsed RF output power at two milliseconds pulse width, twenty percent duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed transistor is specifically designed for long pulse radar applications. It utilizes gold metalization and diffused emitter ballasting to provide high reliability and supreme ruggedness. CASE OUTLINE 55AW, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC 88 Watts Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current 50 Volts 3.5 Volts 4.0 Amps Maximum Temperatures Storage Temperature Operating Junction Temperature - 65 to + 200oC + 200oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL CHARACTERISTICS TEST CONDITIONS MIN Pout Pin Pg Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance F = 1200-1400 MHz Vcc = 28 Volts Pulse Width = 2 ms Duty = 20% Rated Conditions 30 ηc VSWR BVces BVebo Hfe Cob θjc Collector to Emitter Breakdown Emitter to Base Breakdown DC Current Gain Output Capacitance* Thermal Resistance Ic = 50 mA Ie = 5 mA Vce=5 V, Ic =500mA F=1 MHz, Vcb=28V Rated Pulse Condition TYP MAX 6.0 7.0 48 UNITS Watts Watts dB % 3:1 50 3.5 20 Volts Volts 2.0 o pF C/W * Not measureable due to internal prematch network IssueA July 1997 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 1214-30 Typical Impedances August 1996