1214 - 300 300 Watts - 50 Volts, 100µs, 10% Radar 1200 - 1400 MHz GENERAL DESCRIPTION The 1214-300 is an internally matched, COMMON BASE transistor capable of providing 300 Watts of pulsed RF output power at one hundred microseconds pulse width, ten percent duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed transistor is specifically designed for L-Band radar applications. It utilizes gold metalization and diffused emitter ballasting to provide high reliability and supreme ruggedness. CASE OUTLINE 55KT, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 1458 Watts 65 Volts 3.5 Volts 17 Amps - 65 to + 200 oC + 200 oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL CHARACTERISTICS Pout Pin Pg ηc VSWR1 Power Out ( Note 2) Power Input Power Gain Collector Efficiency Load Mismatch Tolerance BVces BVebo Hfe θjc1 Collector to Emitter Breakdown Emitter to Base Breakdown DC Current Gain Thermal Resistance TEST CONDITIONS F = 1200-1400 MHz Vcc = 50 Volts Pulse Width = 100 µs Duty = 10 % F = 1400MHz, Po =270W Ic = 50 mA Ie = 25 mA Vce = 5 V, Ic = 5 mA Rated Pulse Condition MIN TYP MAX 270 42.7 8.0 45 UNITS Watts Watts dB % 3:1 65 3.0 10 Volts Volts 45 0.25 o C/W Note 1: Pulse condition of 100µsec, 10%. Note 2: Product Selected to 300 Watt minimum is available, please contact the factory for details. Issue December, 1994 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 1214-300 August 1996