G5105 Global Mixed-mode Technology Inc. Low-Noise Step-up DC-DC Converter Features General Description The G5105 boost converter in corporate high-performance, voltage-mode, fixed-frequency (at 1MHz), pulse width modulation (PWM) circuitry with a built-in 0.6Ω n-channel MOSFET to provide a highly efficient regulator. 90% Efficiency Adjustable Output from VIN to 20V 0.8A, 0.6Ω, 24V Power MOSFET 2.5V to 5.5V Input Range Fast 1MHz Switching Frequency SOT-23-6 and TSOT-23-6 Package High switching frequency allows easy filtering and faster loop performance. An external compensation pin provides the user flexibility in determining loop dynamics, allowing the use of small, low ESR ceramic output capacitors. The device can produce an output voltage as high as 20V. Applications Small/Medium Size LCD Displays Organic LED Bias Portable Applications Hand-Held Devices The G5105 is available in a space-saving SOT-23-6 and TSOT-23-6 package. Ordering Information ORDER NUMBER MARKING TEMP. RANGE PACKAGE (Pb free) G5105TBU G5105TPU 5105xx 5105x -40°C ~ +85°C -40°C ~ +85°C SOT-23-6 TSOT-23-6 Note:TB : SOT-23-6 TP: TSOT-23-6 U: Tape & Reel Pin Configuration Typical Application Circuit SW 1 6 VCC VCC C1 10µF 5 COMP 2 VOUT 15V, 40mA 4.7µH SHDN GND D1 L1 VIN 2.5V to 5.5V G5105 GND SW CF 47pF R1 560k FB COMP R2 51kΩ RC 3.6kΩ FB 4 SHDN 3 C2 10µF CC 10nF SOT-23-6/TSOT-23-6 TEL: 886-3-5788833 http://www.gmt.com.tw Ver: 0.6 Preliminary May 10, 2006 1 G5105 Global Mixed-mode Technology Inc. Absolute Maximum Ratings Junction Temperature . . . . . . . . . . . . . . . . . . . . .125°C Storage Temperature. . . . . . . . . . . . . . -65°C to 150°C Reflow Temperature (soldering, 10sec) . . . . . . 260°C VCC, SHDN to GND. . . . . . . . . . . . . . . . .-0.3V to +7V FB, COMP to GND . . . . . . . . . . . . . . . . . . -0.3V to VCC SW to GND . . . . . . . . . . . . . . . . . . . . .. . .-0.3V to +24V Operating Temperature . . . . . . . . . . . . . .-40°C to 85°C Stress beyond those listed under “Absolute Maximum Rating” may cause permanent damage to the device. Electrical Characteristics (VCC=V SHDN =3.6V, TA=25°C) PARAMETER CONDITIONS Input Voltage Range Input Voltage UVLO MIN TYP MAX UNITS 2.5 --- 5.5 V 1.7 2.0 2.3 V VFB = 1.5V (no switching) --- 100 200 µA VFB = 0V (switching) V SHDN = 0V --- --- 2 mA --- 0.1 1 µA 1.25 1.28 1.31 V Error Amp Transconductance ----- 100 0.76 ----- ppm/°C mmho Error Amp Voltage Gain --- 100 --- V/V --- 5 10 % 0.7 1 1.3 MHz % Quiescent Current FB Comparator Trip Point Initial Accuracy Temperature Coefficient Output Over Voltage Protection Switching Frequency VFB = 0.2V Maximum Duty 85 --- --- Switch RDS(ON) ISW = 150mA --- 0.6 1 Ω Switch Leakage Current VSW = 20V --- 0.1 10 µA Switch Current Limit 0.7 0.95 1.3 A SHDN Pin Voltage High 2 --- --- V SHDN Pin Voltage Low --- --- 0.8 V TEL: 886-3-5788833 http://www.gmt.com.tw Ver: 0.6 Preliminary May 10, 2006 2 G5105 Global Mixed-mode Technology Inc. Typical Performance Characteristics (VCC= +3.6V, V SHDN = +3.6V, L=10µH, TA=25°C, unless otherwise noted.) IQ_SW vs. Temperature 1.2 1 1 0.8 0.8 IQ_SW (mA) IQ_SW (mA) IQ_SW vs. Input Voltage 1.2 0.6 0.4 0.2 0.6 0.4 0.2 0 2 2.5 3 3.5 4 4.5 5 5.5 0 -40 6 -20 0 Input Voltage (V) 120 120 100 100 80 60 20 20 0 3.5 4 4.5 5 5.5 0 -40 6 -20 0 0.4 0.4 0.3 0.3 0.2 0.2 0.1 0 -0.1 -0.2 60 80 100 0 -0.1 -0.2 -0.3 -0.4 -0.4 -0.5 3.5 4 4.5 Input Voltage (V) 40 0.1 -0.3 3 20 IQ_SHDN vs. Temperature 0.5 IQ_SHDN (µ A) IQ_SHDN (µ A) IQ_SHDN vs. Input Voltage 0.5 2.5 100 Temperature ( °C) Input Voltage (V) 2 80 60 40 3 60 80 40 2.5 40 IQ_NOSW vs. Temperature 140 IQ_NOSW (µA) IQ_NOSW (µA) IQ_NOSW vs. Input Voltage 140 2 20 Temperature ( °C) 5 5.5 -0.5 -40 6 -20 0 20 40 60 80 100 Temperature ( °C) TEL: 886-3-5788833 http://www.gmt.com.tw Ver: 0.6 Preliminary May 10, 2006 3 G5105 Global Mixed-mode Technology Inc. Typical Performance Characteristics (continued) Feedback Voltage vs. Temperature 1.31 1.3 1.3 Feedback Voltage (mV) Feedback Voltage (mV) Feedback Voltage vs. Input Voltage 1.31 1.29 1.28 1.27 1.26 1.25 2 2.5 3 3.5 4 4.5 5 5.5 1.29 1.28 1.27 1.26 1.25 -40 6 -20 0 Input Voltage (V) 1 0.9 1 0.9 0.8 0.7 0.6 0.5 0.4 0.1 0 0.1 0 -40 3.5 4 4.5 5 5.5 6 -20 0 0.9 0.9 0.8 0.8 0.7 0.7 0.6 0.5 0.4 60 80 100 0.5 0.4 0.3 0.2 0.2 0.1 0.1 0 3.5 4 4.5 Input Voltage (V) 40 0.6 0.3 3 20 SW R_on vs. Temperature 1 SW R_on (Ω) SW R_on (Ω) SW R_on vs. Input Voltage 1 2.5 100 Temperature ( °C) Input Voltage (V) 2 80 0.6 0.5 0.4 0.3 0.2 3 60 0.8 0.7 0.3 0.2 2.5 40 Frequency vs. Temperature 1.2 1.1 Frequency (MHz) Frequency (MHz) Frequency vs. Input Voltage 1.2 1.1 2 20 Temperature ( °C) 5 5.5 0 -40 6 -20 0 20 40 60 Temperature ( °C) 80 100 TEL: 886-3-5788833 http://www.gmt.com.tw Ver: 0.6 Preliminary May 10, 2006 4 G5105 Global Mixed-mode Technology Inc. Typical Performance Characteristics (continued) Current Limit vs. Temperature 1000 1000 950 950 900 900 Current Limit (mA) Current Limit (mA) Current Limit vs. Input Voltage 850 800 750 700 650 850 800 750 700 650 600 2 2.5 3 3.5 4 4.5 Input Voltage (V) 5 5.5 600 -40 6 -20 0 20 40 60 Temperature (°C) Stability Waveform Stability Waveform Stability Waveform Stability Waveform 80 100 TEL: 886-3-5788833 http://www.gmt.com.tw Ver: 0.6 Preliminary May 10, 2006 5 G5105 Global Mixed-mode Technology Inc. Typical Performance Characteristics (continued) Stability Waveform Stability Waveform Load Transient Load Transient Efficiency vs. Load Current 100 90 90 80 80 V IN=2.5V 70 70 Efficiency (%) Efficiency (%) Efficiency vs. Load Current 100 V IN=3.6V 60 50 V IN=5.0V 40 30 20 V IN=3.6V 50 30 V IN=3.0V V OUT =20V 10 0 V IN=5.0V 40 20 V OUT =7.5V 10 60 0 0.1 1 10 100 Load Current (mA) 1000 0.1 1 10 100 Load Current (mA) 1000 TEL: 886-3-5788833 http://www.gmt.com.tw Ver: 0.6 Preliminary May 10, 2006 6 Global Mixed-mode Technology Inc. G5105 Recommended Minimum Footprint SOT-23-6/TSOT-23-6 TEL: 886-3-5788833 http://www.gmt.com.tw Ver: 0.6 Preliminary May 10, 2006 7 G5105 Global Mixed-mode Technology Inc. Pin Description PIN NAME 1 2 SW GND FUNCTION 3 4 FB SHDN Feedback Pin. Active Low Shutdown Pin. 5 6 COMP VCC Compensation Pin. Input Supply Pin. Bypass this pin with a capacitor as close to the device as possible. Switch Pin. The drain of the internal NMOS power switch. Connect this pin to inductor. Ground Pin. Block Diagram FB SW COMP COMPARATOR A1 + DRIVER R A2 + S CONTROL Q M1 1.28V RAMP GENERATOR VREF + OC 1MHz OSCILLATOR VCC GND SHDN White LED Driver D1 L1 VOUT VIN C1 M1 VCC ON OFF D2 (Optional) C2 SW SHDN G5105 GND R2 FB COMP R3 R4 R1 RC CC VBIAS VDIM PWM Dimming TEL: 886-3-5788833 http://www.gmt.com.tw Ver: 0.6 Preliminary May 10, 2006 8 Global Mixed-mode Technology Inc. G5105 ciency are the major concerns for most G5105 applications. Inductor with low core losses and small DCR (cooper wire resistance) at 1MHz are good choice for G5105 applications. Function Description Normal Operation The G5105 uses a constant frequency control scheme to provide excellent line and load regulation. Operation can be best understood by referring to the block diagram. At the start of each oscillator cycle, the SR latch is set, which turns on the power switch M1. An artificial ramp is generated to the positive terminal of the PWM comparator A2. When this voltage exceeds the level at the negative input of A2, the SR latch is reset turning off the power switch. The level at the negative input of A2 is set by the error amplifier A1, and is simply an amplified version of the difference between the feedback voltage and the reference voltage of 1.28V. In this manner, the error amplifier sets the correct peak current level (DCM) or duty (CCM) to keep the output in regulation. Capacitor Selection The small size of ceramic capacitors makes them suitable for G5105 applications. X5R and X7R types are recommended because they retain their capacitance over wider voltage and temperature ranges than other types such as Y5V or Z5U. A 10µF or 22µF capacitor for input and output are recommended for most applications. Smaller input/output capacitor enlarges the input/output ripple. Diode Selection Schottky diodes, with their low forward voltage drop and fast reverse recovery, are the ideal choices for G5105 applications. The forward voltage drop of a Schottky diode represents the conduction losses in the diode, while the diode capacitance (CT or CD) represents the switching losses. For diode selection, both forward voltage drop and diode capacitance need to be considered. Schottky diodes with higher current ratings usually have lower forward voltage drop and larger diode capacitance, which can cause significant switching losses at the 1MHz switching frequency of the G5105. A Schottky diode rated at 1A is sufficient for most G5105 applications. Over Voltage Protection Over voltage protect function is designed to prevent the output accidentally damage the load. Once the device detects over voltage (nominalx1.05) at the output, the internal NMOS switch turns off to stop power input Application Information Inductor Selection A 4.7µH or 10µH inductor is recommended for small ripple applications. Small form factor and high effi- TEL: 886-3-5788833 http://www.gmt.com.tw Ver: 0.6 Preliminary May 10, 2006 9 G5105 Global Mixed-mode Technology Inc. Package Information C D L H E θ1 e1 e A A2 A1 b SOT-23-6 (TB) Package Note: 1. Package body sizes exclude mold flash protrusions or gate burrs 2. Tolerance ±0.1000 mm (4mil) unless otherwise specified 3. Coplanarity: 0.1000mm 4. Dimension L is measured in gage plane MIN. DIMENSION IN MM NOM. MAX. MIN. DIMENSION IN INCH NOM. MAX. A A1 A2 b 1.00 0.00 0.70 0.35 1.10 ----0.80 0.40 1.30 0.10 0.90 0.50 0.039 0.000 0.028 0.014 0.043 ----0.031 0.016 0.051 0.004 0.035 0.020 C D E e 0.10 2.70 1.40 ----- 0.15 2.90 1.60 1.90(TYP) 0.25 3.10 1.80 ----- 0.004 0.106 0.055 ----- 0.006 0.114 0.063 0.075(TYP) 0.010 0.122 0.071 ----- H L θ1 2.60 0.37 2.80 ------ 3.00 ----- 0.102 0.015 0.110 ----- 0.118 ----- 1° 5° 9° 1° 5° 9° SYMBOL TEL: 886-3-5788833 http://www.gmt.com.tw Ver: 0.6 Preliminary May 10, 2006 10 G5105 Global Mixed-mode Technology Inc. C D L E1 E θ1 e e1 A2 A y b A1 TSOT-23-6 (TP) Package Note: 1. Dimension D does not include mold flash, protrusions or tate burrs. Mold flash, protrusions or gate burrs shall not exceed 0.1mm PER end. Dimension E1 does not include interlead flash or protrusion. Interlead flash or protrusion shall not exceed 0.15mm PER side. 2. The package top may be smaller than the package bottom. Dimensions D and E1 are determined at the outermost extremes of the plastic body exclusive of mold flash, tie bar burrs, gate burrs and interlead flash, but including any mismatch between the top and bottom of the plastic body. SYMBOL A A1 A2 b C D E E1 e e1 L y θ1 MIN. DIMENSION IN MM NOM. 0.75 0.00 0.70 0.35 0.10 2.80 2.60 1.50 0.37 ----0° --------0.75 --------2.90 2.80 1.60 0.95 BSC 1.90 BSC ------------- MAX. MIN. 0.90 0.10 0.80 0.51 0.25 3.00 3.00 1.70 0.030 0.000 0.028 0.014 0.004 0.110 0.102 0.059 ----0.10 8° 0.015 DIMENSION IN INCH NOM. 0° --------0.030 --------0.114 0.110 0.063 0.0374 BSC 0.0748 BSC ------------- MAX. 0.035 0.004 0.031 0.020 0.010 0.118 0.118 0.067 ----0.004 8° Taping Specification PACKAGE Q’TY/REEL SOT-23-6 TSOT-23-6 3,000 ea 3,000 ea Feed Direction SOT- 23-6 / TSOT-23-6 Package Orientation GMT Inc. does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and GMT Inc. reserves the right at any time without notice to change said circuitry and specifications. TEL: 886-3-5788833 http://www.gmt.com.tw Ver: 0.6 Preliminary May 10, 2006 11