ISSUED DATE :2005/11/24 REVISED DATE : G276P Complementary Output Hall Effect Latched Sink Driver IC Description The G276P is an integrated Hall sensors with output drivers designed for electronic commutation of brushless DC motor applications. The device includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies the Hall voltage, and a Schmitt trigger to provide switching hysteresis for noise rejection, and complementary open-collector drivers for sinking large current loads. An internal bandgap regulator is used to provide temperature compensated supply voltage for internal circuits and allows a wide operating supply range. If a magnetic flux density larger than threshold Bop, DO is turned on (low) and DOB is turned off (high). The output state is held until a magnetic flux density reversal falls below Brp causing DO to be turned off and DOB turned on. G276P is rated for operation over temperature range from -20 to 85 and voltage range from 3.5V to 20V. The devices are available in low cost die forms or rugged 4 pin SIP packages. Features *On-chip Hall sensor IC with two different sensitivity and hysteresis settings for G276P *Internal bandgap regulator allows temperature compensated operations and a wide operating voltage range. *High output sinking capability up to 300mA for driving large load. *Lower current change rate reduces the peak output voltages during switching. *Build in protection diode for chip reverse power connecting. *Package: SIP-4L. Application 1)Brushless DC Motor 2)Brushless DC Fan 3)Revolution Counting 4)Speed Measurement Package Dimensions REF. A G276P Millimeter Min. Max. 1.295 1.803 REF. Millimeter Min. Max. D 5.105 5.359 A1 0.610 E 3.531 3.785 b 0.330 0.432 L 14.00 16.00 b1 0.406 0.508 e 1.27REF Page: 1/5 ISSUED DATE :2005/11/24 REVISED DATE : Functional Block Diagrams Pin Descriptions Name Vcc DO DOB Vss P/I/O P O O P Pin# 1 2 3 4 Description Positive Power supply Output Pin Output Pin Ground Absolute Maximum Ratings at Ta = 25 Parameter Supply Voltage Reverse Vcc Polarity Voltage Magnetic flux density Output OFF Voltage Continuous Output ON Current Hold Operating Temperature Range Storage Temperature Range Package Power Dissipation Maximum Junction Temp. Symbol Vcc VRCC B Vce IC Ta Ts PD Tj Value 20V -35V Unlimited 35 300 400 -20 ~ 85 -65 ~ 150 550 175 Unit V V V mA mW *Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. Electrical Characteristics (Ta=+25 , Vcc=4.0V to 20V) Parameter Low Supply Voltage Supply Voltage Symbol Test Conditions Vce Vcc=3.5V, IL=100mA Vcc - Output Saturation Voltage Vce(sat) Vcc=14V, IL=300mA Output Leakage Current Supply Current Output Rise Time Output Falling Time Switch Time Differential G276P ICex ICC Tr Tf t Vce=14V, Vcc=14V Vcc=20V, Output Open Vcc=14V, RL=820 , CL=20pf Vcc=14V, RL=820 , CL=20pf Vcc=14V, RL=820 , CL=20pf Min 3.5 Typ 0.4 - Max 20 Unit V V - 0.6 0.9 V - <1 18 3.0 0.3 3.0 10 25 10 1.5 10 uA mA us us us Page: 2/5 ISSUED DATE :2005/11/24 REVISED DATE : Power dissipation vs. Environment Temperature Ta( ) 25 50 60 70 80 85 90 95 100 105 110 115 120 Pd(mW) 550 450 400 350 300 280 260 240 220 200 180 160 140 P d (m W ) P o w e r D is s ip a tio n C u rve 600 500 400 300 200 100 0 25 50 75 100 125 150 T a (ºC ) Magnetic Characteristics Characteristic BIN A Operate Point BIN B BIN C BIN A Release Point BIN B BIN C BIN A Hysteresis BIN B BIN C Symbol Bop Bop Bop Brp Brp Brp Bhys Bhys Bhys Ta=+25 Min Max 5 50 70 100 -50 -5 -70 -100 40 80 40 80 40 80 Ta=0 Min 5 -50 -70 -100 40 40 40 to 70 Max 50 70 100 -5 80 80 80 Unit Gauss Gauss Gauss Gauss Gauss Gauss Gauss Gauss Gauss Test Circuit 14V Vout1(DO) RL1 Vout2(DOB) RL2 RL1=RL2=820 Ohm CL1=CL2=20 pF G276P CL1 CL2 Page: 3/5 ISSUED DATE :2005/11/24 REVISED DATE : Hysteresis Characteristics Bin A RP 12 OFF 10 8 6 4 ON -200 -100 2 OP 0 100 DO Output Voltage in Volts Output Voltage in Volts DOB 200 OFF OP 10 8 6 4 RP -200 Magnetic Flux Density in Gauss 12 -100 2 ON 0 100 200 Magnetic Flux Density in Gauss Bin B 12 RP Output Voltage in Volts DO OFF 10 8 6 4 2 ON -200 -100 0 OP 100 200 Output Voltage in Volts 12 OFF 10 8 6 4 2 ON -200 -100 0 OP 100 200 Magnetic Flux Density in Gauss G276P OP 10 8 6 4 2 RP -100 0 ON 100 200 Magnetic Flux Density in Gauss Bin C DOB RP 12 OFF -200 Magnetic Flux Density in Gauss DO Output Voltage in Volts Output Voltage in Volts DOB 12 OFF OP 10 8 6 4 2 RP -200 -100 0 ON 100 200 Magnetic Flux Density in Gauss Page: 4/5 ISSUED DATE :2005/11/24 REVISED DATE : Application Circuit Double Coil 1) Output on current, Ic > 250mA 2) With FG output Remark: C1, C2: Capacitor 2.2 F~4.7 F (optional) Remark: C1: Capacitor 0.1 F~1 F R1: Resister 1K Package Information Active Area Depth Package Sensor Location 1.75mm Top View Marking Site 1.35mm 0.7mm Top View 1 2 3 4 Tolerance: +/- 0.05mm Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 G276P Page: 5/5