CORPORATION G2N5551 ISSUED DATE :2004/06/09 REVISED DATE :2004/11/29B NP N E PITAX I AL PLANAR T RANSI STOR Description The G2N5551 is designed for general purpose switching and amplifier applications. Features *Complementary to PNP Type G2N5401 *High Collector – Emitter Breakdown Voltage (VCEO > 160V (@IC=1mA) Package Dimensions D E S1 A TO-92 b1 S E A T IN G PLANE Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 L REF. e1 C b e A S1 b b1 C REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings at Ta = 25 Parameter Symbol Ratings Tj +150 Storage Temperature Tstg -55 ~ +150 Collector to Base Voltage VCBO 180 V Collector to Emitter Voltage VCEO 160 V Emitter to Base Voltage VEBO 6 V Junction Temperature Unit Collector Current IC 600 mA Total Power Dissipation PD 625 mW Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 fT Cob at Ta = 25 Min. 180 160 6 80 80 50 100 - Typ. 160 - Max. 50 50 0.15 0.2 1 1 400 300 6 - Unit V V V nA nA V V V V MHz pF Test Conditions IC=100uA , IE=0 IC=1mA,IB=0 IE=10uA ,IC=0 VCB=120V, IE=0 VEB=4V, IC=0 IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA VCE=10V, IC=10mA, f=100MHz VCB=10V, f=1MHz, IE=0 * Pulse Test: Pulse Width 380us, Duty Cycle 2% Classification OF hFE2 Rank A N C Range 80-200 100-250 160-400 G2N5551 Page: 1/3 CORPORATION ISSUED DATE :2004/06/09 REVISED DATE :2004/11/29B Characteristics Curve G2N5551 Page: 2/3 CORPORATION ISSUED DATE :2004/06/09 REVISED DATE :2004/11/29B Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 G2N5551 Page: 3/3