GTM GM4401

CORPORATION
GM4401
ISSUED DATE :2004/12/17
REVISED DATE :
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GM4401 is designed for general purpose switching and amplifier applications.
Features
Complementary to GM4403
High Power Dissipation: 1W at 25
High DC Current Gain: 100-300 at 150mA
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5
TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Symbol
Ratings
Tj
+150
Unit
Storage Temperature
Collector to Base Voltage at Ta=25
Tstg
-55 ~ +150
VCBO
60
V
Collector to Emitter Voltage at Ta=25
VCEO
40
V
Emitter to Base Voltage at Ta=25
VEBO
5
V
Collector Current at Ta=25
IC
600
mA
Total Power Dissipation at Ta=25
PD
1
W
Characteristics
Symbol
at Ta = 25
Min.
Typ.
Max.
Unit
BVCBO
60
-
-
V
Test Conditions
BVCEO
40
-
-
V
IC=1mA
BVEBO
5
-
-
V
IE=10uA
IC=100uA
ICEX
-
-
100
nA
VCE=35V, V BE= 0.4V
*VCE(sat)1
-
-
400
mV
IC=150mA, IB=15mA
*VCE(sat)2
-
-
750
mV
IC=500mA, IB=50mA
*VBE(sat)1
750
-
950
mV
IC=150mA, IB=15mA
*VBE(sat)2
-
-
1.2
V
*hFE1
20
-
-
VCE=1V, IC=0.1mA
*hFE2
40
-
-
VCE=1V, IC=1mA
*hFE3
80
-
-
VCE=1V, IC=10mA
*hFE4
100
-
300
VCE=1V, IC=150mA
*hFE5
40
-
-
fT
250
-
-
MHz
-
-
6.5
pF
Cob
IC=500mA, IB=50mA
VCE=2V, IC=500mA
Classification Of hFE4
VCE=10V, IC =20mA, f=100MHz
VCB=5V, f=1MHz
* Pulse Test: Pulse Width
Rank
A
B
Range
100-210
190-300
380 s, Duty Cycle
2%
1/2
CORPORATION
ISSUED DATE :2004/12/17
REVISED DATE :
Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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