GTM G706SD

1/2
G706SD
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E
V O LT A G E 4 0 V, C U R R E N T 0 . 0 3 A
Description
The G706SD is designed for general purpose detection and high speed switching.
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
0.85
1.15
0
10
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+125
Storage Temperature
Tstg
-40 ~ +125
Maximum Recurrent Peak Reverse Voltage
VRRM
45
V
Maximum RMS Voltage
VRMS
32
V
Maximum DC Blocking Voltage
VDC
40
V
Peak Forward Surge Current at 8.3mSec single half sine-wave
IFSM
0.2
A
Typical Junction Capacitance between Terminal
CJ
2.0
pF
Maximum Average Forward Rectified Current
Io
0.03
A
Total Power Dissipation
PD
225
mW
Characteristics
at Ta = 25
Symbol
Typ.
Unit
Test Condition
Maximum Instantaneous Forward Voltage
Characteristics
VF
0.37
V
IF = 1mA
Maximum Average Reverse Current
IR
1.0
uA
VR = 10V
2/2
Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4
FAX : 86-21-38950165