ISSUED DATE :2004/09/24 REVISED DATE : GSN217U S U R F A C E M O U N T, S W I T C H I N G D I O D E V O LT A G E 8 0 V, C U R R E N T 0 . 1 A Description The GSN217U is designed for ultra high speed switching. Package Dimensions REF. A A1 A2 D E HE Parameter Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Symbol Ratings Tj +150 Storage Temperature Tstg -55 ~ +150 Maximum Peak Repetitive Reverse Voltage VRRM 80 V Maximum RMS Voltage VRMS 56 V Maximum DC Blocking Voltage VDC 80 V Peak Forward Surge Current at 1uSec IFSM 4.0 A Typical Junction Capacitance between Terminal (Note 1) CJ 2.0 pF Junction Temperature Unit Maximum Average Forward Rectified Current Io 0.1 A Total Power Dissipation PD 225 mW Characteristics at Ta = 25 Characteristics Symbol Typ. Unit Test Condition Maximum Instantaneous Forward Voltage VF Maximum Average Reverse Current IR 1.20 V IF = 100mA 0.2 uA VR = 70V Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 6.0 volt. 2. ESD sensitive product handling required. 1/2 ISSUED DATE :2004/09/24 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 2/2