1/2 G B AT 3 4 Description Schottky Diode . Package Dimensions Style : Pin 1.Anode 2.Cathode 3.Common Connection Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. A B C D E F REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 10 0 Absolute Maximum Ratings Parameter Symbol Peak forward current Ratings Unit 200 mA Recurrent Peak Reverse Voltage VRRM 30 V RMS Voltage VRMS 21 V DC Blocking Voltage VDC 30 V Average Forward Rectified Current Io 100 mA Peak Forward Surge Current at 1 Sec IFSM 600 mA CJ 10 pF TRR 5.0 nSec TJ +150 Storage Temperature Tstg -55 ~ +150 Total Power Dissipation at Ta = 25 PD 150 Typical Junction Capacitance between Terminal(note 1) Reverse Recovery Time(Note 2) Operating Temperature Range Characteristics mW at Ta = 25 Symbol Min Max. Unit Maximum Instantaneous Forward Voltage characteristics VF - 1000 mV IF=100mA Maximum Average Reverse Current IR - 2.0 uA VR=25V Note: 1.Measured at 1.0 MHz and applied reverse voltage of 1.0 volts. 2.Measured at applied forward current of 10 mA and reverse current of 10 mA. 3.ESD sensitive product handling required. Characteristics Curve Test Conditions 2/2 Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 FAX : 86-21-38950165