GTM GELM317

CORPORATION
ISSUED DATE :2004/07/30
REVISED DATE :
GELM 317
3 - T E R M I N A L 1 A P O S I T I V E A D J U S T A B L E V O L T A G E R E G U L AT O R
Description
The GELM317 is an adjustable 3-termial positive voltage regulator, designed to supply more than 1.5A of
output current with voltage adjustable from 1.3 to 37V.
Features
*Output current up to 1.5A.
*Output voltage adjustable from 1.3V to 37V.
*Internal short circuit protection.
*Internal over temperature protection.
*Safe-Area compensation for output transistor.
Package Dimensions
REF.
A
b
c
D
E
L4
L5
Millimeter
Min.
Max.
4.40
4.80
0.76
1.0
0.36
0.50
8.60
9.00
9.80
10.4
14.7
15.3
6.20
6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min.
Max.
1.25
1.45
1.17
1.47
13.25
14.25
2.54 REF.
2.60
2.89
3.71
3.96
2.60
2.80
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CORPORATION
ISSUED DATE :2004/07/30
REVISED DATE :
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Input-Output Voltage Difference
Load Temperature
Ratings
Unit
V
Vi-Vo
40
TLEAD
230
Power Dissipation
PD
Internal limited
Operating Temperature Range
TOPR
0~125
Storage Temperature Range
TSTG
-65 ~ 150
Electrical Characteristics
(VI-VO=5V,0
<Tj<125
at Ta = 25
,IO=500mA,IMAX=1.5A,PMAX=20W,unless otherwise specified
PARAMETER
Symbol
Line Regulation
VO
Load Regulation
Adjustable Pin Current
VO
Test Conditions
TYPE Max.
0.01
0.04
%V
Ta=0-125 ,3v<=VI-VO<=40V
0.02
0.07
%V
VO<=6V
18
25
mV
10mA<=IO<=IMAX
Ta=25
VO>=5V
0.4
0.5
%/VO
10mA<=IO<=IMAX
VO<=5V
40
70
mV
VO>=6V
0.8
1.5
%VO
46
2.0
100
5
uA
uA
1.20 1.25
1.30
V
IADJ
Adjustable Pin Current Change
IADJ
UNIT
Ta=25 ,3V<=VI-VO=40V
2.5V<=VI-VO<=40V
,10mA<=IO<=IMAX,PD<=PMAX
3V<=VI-VO<=40V,
Reference Voltage
Temperature Stability
Minimum Load Current for
Regulation
Maximum Output Current
10mA<=IO<=IMAX,PD<=PMAX
STT
IL(MIN)
IO(MAX)
RMS Noise v.s.%of Vout
Ripple Rejection
eN
RR
0.7
VI-VO=40V
VI-VO<=15V,PD<=PMAX
VI-VO<=15V,PD<=PMAX,Ta=25
ST
R
1.5
2.2
0.15
0.4
TA=25 ,10HZ<=f<=10KHZ
0.003
VO=10V,f=120HZ,
VO=10V,f=120HZ,CADJ=10uF
Long-term Stability,TJ=THIGH
Junction to Case Thermal
Resistance
3.5
TA=25 ,1000hr
JC
60
66
%/VO
10
mA
A
0.01 %/VO
dB
75
0.3
5
1
%
/W
*Note: Testing with low duty pulse should be used to avoid heating effect.
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CORPORATION
ISSUED DATE :2004/07/30
REVISED DATE :
Characteristics Curve
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CORPORATION
ISSUED DATE :2004/07/30
REVISED DATE :
Application Circuit
GELM317
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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