GTM GL358

CORPORATION
ISSUED DATE :2005/12/28
REVISED DATE :
GL358
Description
NPN SILICON PLANAR HIGH CURRENT TRANSISTOR
The GL358 is designed for general purpose switching and amplifier applications.
Features
6 Amps continuous current, up to 10Amps peak current
Excellent gain characteristic specified up to 10Amps
Very low saturation voltages
Package Dimensions
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
0°
10°
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
13°TYP.
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
IC
PD
Ratings
+150
-55~+150
200
100
6
6
10
3
Unit
V
V
V
A
A
W
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4
square inch minimum.
Electrical Characteristics(Ta = 25
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
ICES
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
*hFE3
*hFE4
fT
Cob
GL358
Min.
200
100
6
100
100
50
20
-
Typ.
200
130
35
,unless otherwise stated)
Max.
Unit
Test Conditions
V
IC=100uA , IE=0
V
IC=10mA, IB=0
V
IE=100uA ,IC=0
10
nA
VCB=150V, IE=0
50
nA
VCES=100V
10
nA
VEB=6V, IC=0
50
mV
IC=100mA, IB=5mA
150
mV
IC=2A, IB=100mA
340
mV
IC=5A, IB=500mA
1.25
V
IC=5A, IB=500mA
1.10
V
VCE=2V, IC=5A
VCE=2V, IC=10mA
300
VCE=2V, IC=2A
VCE=2V, IC=4A
VCE=2V, IC=10A
MHz
VCE=10V, IC=100mA, f=50MHz
pF
VCB=10V, IE=0, f=1MHz
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CORPORATION
ton
toff
-
55
1650
*Measured under pulse condition. Pulse width
-
ns
300 s, Duty Cycle
ISSUED DATE :2005/12/28
REVISED DATE :
VCC=10V, IC=1A, IB1=IB2=100mA
2%
Spice parameter data is available upon request for this device.
Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GL358
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