ISSUED DATE :2005/02/18 REVISED DATE : G S A1576 A P NP E PITAX IAL PL ANAR T RANS ISTO R Description The GSA1576A is designed for use in driver stage of AF amplifier and general purpose amplification. Features Complements the GSC4081 Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. REF. L1 L b c e Q1 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Symbol Ratings Tj +150 Unit Tstg -55~+150 Collector to Base Voltage VCBO -60 V Collector to Emitter Voltage VCEO -50 V Emitter to Base Voltage VEBO -6 V Collector Current IC -150 mA Total Power Dissipation PD 225 mW Characteristics Symbol at Ta = 25 Min. Typ. Max. Unit BVCBO -60 - - V BVCEO -50 - - V IC=-1mA BVEBO -6 - - V IE=-50uA ICBO - - -100 nA VCB=-60V IEBO - - -100 nA VEB=-6V mV IC=-50mA, IB=-5mA VCE(sat) - - -500 120 - 560 fT - 140 - MHz Cob - 4.0 5.0 pF hFE Test Conditions IC=-50uA VCE=-6V, IC=-1mA VCE=-12V, IE=-2mA, f=100MHz VCB=-12V, f=1MHz,IE=0 Classification Of hFE Rank 5AQ 5AR 5AS Range 120 - 270 180 - 390 270 – 560 1/3 ISSUED DATE :2005/02/18 REVISED DATE : Characteristics Curve 2/3 ISSUED DATE :2005/02/18 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 3/3