CORPORATION GSC1815 ISSUED DATE :2004/07/09 REVISED DATE :2004/11/29B NPN EPITAXIAL PLANAR TANSISTOR Description The GSC1815 is designed for use in driver stage of AF amplifier and general purpose applications. Features *Complementary to GSA1015 Package Dimensions D E S1 A TO-92 b1 S E A T IN G PLANE Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 L REF. e1 C b e A S1 b b1 C REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings at Ta = 25 Parameter Symbol Ratings Unit Junction Temperature Tj +150 Storage Temperature Tstg -55 ~ +150 Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 5 V IC 150 mA Collector Current Base Current IB 50 mA Total Power Dissipation PD 400 mW Characteristics at Ta = 25 Symbol Min. Typ. Max. Unit Test Conditions BVCBO 60 - - V BVCEO 50 - - V IC=1mA BVEBO 5 - - V IE=10uA ICBO - - 100 nA VCE=60V, IE = 0 VEB=5V, Ic = 0 IC=100uA IEBO - - 100 nA *VCE(sat) - 0.1 0.25 V IC=100mA, IB=10mA *VBE(sat) - - 1.0 V IC=100mA, IB=10mA hFE1 70 - 700 hFE2 25 - - fT 80 - - MHz - - 3.0 pF Cob VCE=6V, IC=2mA VCE=6V, IC=150mA VCE=10V, IC =1mA, f=100MHz VCB=10V, IE = 0,f=1MHz * Pulse Test: Pulse Width 380us, Duty Cycle 2% Classification Of hFE1 Rank O Y GR L Range 70-140 120-240 200-400 350-700 GSC1815 Page: 1/2 CORPORATION ISSUED DATE :2004/07/09 REVISED DATE :2004/11/29B Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GSC1815 Page: 2/2