Pb Free Plating Product ISSUED DATE :2005/03/01 REVISED DATE :2005/09/30B GSC4410 BVDSS RDS(ON) ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 30V 13.5m 10A Description The GSC4410 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features *Dynamic dv/dt Rating *Simple Drive Requirement *Repetitive Avalanche Rated *Fast Switching Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0 0.40 0.19 6.20 5.00 4.00 8 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45 1.27 TYP. Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V Continuous Drain Current, VGS@10V ID @TA=25 10 A Continuous Drain Current, VGS@10V ID @TA=70 8 A 50 A 2.5 W Pulsed Drain Current 1 IDM PD @TA=25 Total Power Dissipation Linear Derating Factor 0.02 Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Symbol Value Rthj-amb 50 W/ Thermal Data Parameter Thermal Resistance Junction-ambient GSC4410 Max. Unit /W Page: 1/5 ISSUED DATE :2005/03/01 REVISED DATE :2005/09/30B Electrical Characteristics(Tj = 25 Parameter Unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 30 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.037 - Gate Threshold Voltage VGS(th) 1.0 - 3.0 V VDS=VGS, ID=250uA gfs - 20 - S VDS=15V, ID=10A IGSS - - 100 nA VGS= - - 1 uA VDS=30V, VGS=0 - - 25 uA VDS=24V, VGS=0 - 11.5 13.5 - 16.5 20 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=55 ) Static Drain-Source On-Resistance IDSS RDS(ON) V/ m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA 20V VGS=10V, ID=10A VGS=4.5V, ID=5A Total Gate Charge2 Qg - 20 - Gate-Source Charge Qgs - 3 - Gate-Drain (“Miller”) Change Qgd - 11 - Td(on) - 7.5 - Tr - 10.2 - Td(off) - 29 - Tf - 33 - Input Capacitance Ciss - 955 - Output Capacitance Coss - 555 - Reverse Transfer Capacitance Crss - 204 - Symbol Min. Typ. Max. Unit VSD - - 1.3 V IS=2.3A, VGS=0V, Tj=25 IS - - 2.3 A VD=VG=0V, VS=1.3V ISM - - 50 A Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time nC ID=10A VDS=15V VGS=5V ns VDS=25V ID=1A VGS=5V RG=3.3 RD=25 pF VGS=0V VDS=15V f=1.0MHz Source-Drain Diode Parameter 2 Forward On Voltage Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Test Conditions Notes: 1. Pulse width limited by safe operating area. 2. Pulse width 300us, duty cycle 2%. GSC4410 Page: 2/5 ISSUED DATE :2005/03/01 REVISED DATE :2005/09/30B Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Maximum Drain Current v.s. Case Temperature Fig 6. Type Power Dissipation GSC4410 Page: 3/5 ISSUED DATE :2005/03/01 REVISED DATE :2005/09/30B Fig 7. Maximum Safe Operating Area Fig 9. Gate Charge Characteristics Fig 11. Forward Characteristics of Reverse Diode GSC4410 Fig 8. Effective Transient Thermal Impedance Fig 10. Typical Capacitance Characteristics Fig 12. Gate Threshold Voltage v.s. Junction Temperature Page: 4/5 ISSUED DATE :2005/03/01 REVISED DATE :2005/09/30B Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GSC4410 Page: 5/5