Pb Free Plating Product ISSUED DATE :2006/01/25 REVISED DATE : GT6924E BVDSS RDS(ON) ID N-CHANNEL MOSFET WITH SCHOTTKY DIODE 20V 600m 1A Description The GM2306 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Features *Lower on-resistance *Fast Switching Characteristic *Included Schottky Diode Package Dimensions REF. Millimeter A B Min. 2.70 2.60 Max. 3.10 3.00 C D 1.40 0.30 E F 0 0° REF. Dimensions G H Millimeter 1.90 REF. 1.20 REF. 1.80 0.55 I J 0.12 REF. 0.37 REF. 0.10 10° K L 0.60 REF. 0.95 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage (MOSFET) Gate-Source Voltage (MOSFET) Continuous Drain Current3 (MOSFET) 3 Continuous Drain Current (MOSFET) Pulsed Drain Current1 (MOSFET) Reverse Voltage (Schottky) Average Forward Current (Schottky) Pulsed Forward Current1 (Schottky) Total Power Dissipation (MOSFET) Total Power Dissipation (Schottky) Symbol VDS VGS ID @TA=25 ID @TA=70 IDM VKA IF IFM PD @TA=25 Operating Junction and Storage Temperature Range Tj, Tstg Ratings 20 ±6 1.0 0.8 8 20 0.5 2.0 0.9 0.9 -55 ~ +125 Unit V V A A A V A A W W Value 110 110 Unit /W /W Thermal Data Parameter 3 Thermal Resistance Junction-ambient 3 Thermal Resistance Junction-ambient GT6924E (MOSFET) M ax. (Schottky) M ax. Symbol Rthj-a Page: 1/4 ISSUED DATE :2006/01/25 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 20 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.02 - Gate Threshold Voltage VGS(th) 0.5 - 1.2 V VDS=VGS, ID=250uA gfs - 1 - S VDS=5V, ID=600mA IGSS - - ±10 uA VGS= ± 6V - - 1 uA VDS=20V, VGS=0 - - 10 uA VDS=16V, VGS=0 - - 600 - - 850 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) Static Drain-Source On-Resistance IDSS RDS(ON) V/ m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VGS=4.5V, ID=1A VGS=2.5V, ID=0.5A Total Gate Charge2 Qg - 1.3 2 Gate-Source Charge Qgs - 0.3 - Gate-Drain (“Miller”) Change Qgd - 0.5 - Td(on) - 21 - Tr - 53 - Td(off) - 100 - Tf - 125 - Input Capacitance Ciss - 38 60 Output Capacitance Coss - 17 - Reverse Transfer Capacitance Crss - 12 - Symbol Min. Typ. Max. Unit VSD - - 1.2 V Symbol Min. Typ. Max. Unit Forward Voltage Drop VF - - 0.5 V IF=500mA Maximum Reverse Leakage Current IRM - - 100 uA VR=20V Junction Capacitance CT - 21 - pF VR=10V Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time nC ID=600mA VDS=16V VGS=4.5V Ns VDS=10V ID=600mA VGS=5V RG=3.3 RD=16.7 pF VGS=0V VDS=10V f=1.0MHz Source-Drain Diode Parameter 2 Forward On Voltage Test Conditions IS=750mA, VGS=0V Schottky Characteristics (Tj = 25 ) Parameter Test Conditions Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 2 3. Surface mounted on 1 in copper pad of FR4 board, t 5sec; 180 /W when mounted on Min. copper pad. GT6924E Page: 2/4 ISSUED DATE :2006/01/25 REVISED DATE : MOSFET Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode GT6924E Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 3/4 ISSUED DATE :2006/01/25 REVISED DATE : Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Schottky Diode Characteristics Curve Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 1. Reverse Leakage Current v.s. Junction Temperature Fig 12. Forward Voltage Drop Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GT6924E Page: 4/4