Pb Free Plating Product ISSUED DATE :2005/11/16 REVISED DATE : GSS9980 BVDSS RDS(ON) ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 80V 52m 4.6A Description The GSS9980 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Features *High Breakdown Voltage *Low Gate Change *Single Drive Requirement Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Ratings Unit VDS 80 V VGS ±20 V 3 ID @TA=25 4.6 A 3 ID @TA=70 2.9 A 30 A 2 W Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current Symbol 1 IDM Total Power Dissipation PD @TA=25 Linear Derating Factor 0.016 Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Symbol Value Rthj-amb 62.5 W/ Thermal Data Parameter Thermal Resistance Junction-ambient GSS9980 3 Max. Unit /W Page: 1/4 ISSUED DATE :2005/11/16 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 80 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.08 - Gate Threshold Voltage VGS(th) 1.0 - 3.0 V VDS=VGS, ID=250uA gfs - 7 - S VDS=10V, ID=4A IGSS - - ±100 nA VGS= ±20V - - 1 uA VDS=80V, VGS=0 - - 25 uA VDS=64V, VGS=0 - - 52 - - 60 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) Static Drain-Source On-Resistance2 IDSS RDS(ON) V/ m Test Conditions VGS=0, ID=1mA Reference to 25 , ID=1mA VGS=10V, ID=4.6A VGS=4.5V, ID=3.6A Total Gate Charge2 Qg - 19 30 Gate-Source Charge Qgs - 5 - Gate-Drain (“Miller”) Change Qgd - 10 - Td(on) - 11 - Tr - 6 - Td(off) - 30 - Tf - 16 - Input Capacitance Ciss - 1820 2910 Output Capacitance Coss - 130 - Reverse Transfer Capacitance Crss - 94 - Symbol Min. Typ. Max. Unit VSD - - 1.2 V IS=1.6A, VGS=0V Reverse Recovery Time Trr - 44 - ns Reverse Recovery Charge Qrr - 90 - nC IS=4A, VGS=0V dI/dt=100A/ s Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time nC ID=4A VDS=64V VGS=4.5V ns VDS=40V ID=1A VGS=10V RG=3.3 RD=40 pF VGS=0V VDS=25V f=1.0MHz Source-Drain Diode Parameter 2 Forward On Voltage 2 Test Conditions Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 135 /W when mounted on Min. copper pad. GSS9980 Page: 2/4 ISSUED DATE :2005/11/16 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature GSS9980 Page: 3/4 ISSUED DATE :2005/11/16 REVISED DATE : Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 11. Switching Time Waveform Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GSS9980 Page: 4/4