PHOTODIODE Si PIN photodiode S5821 series High performance, high reliability Si PIN photodiodes S5821 series is a high-speed Si PIN photodiode having high sensitivity over a wide spectral range from visible to near infrared light. S5821 series provides high performance and reliability at a low cost. Features Applications l High-speed response l Wide spectral response l Low dark current l Low terminal capacitance l Optical switch l Automobile optical sensor l General photometry ■ General ratings / Absolute maximum ratings Type No. S5821 S5821-01 S5821-02 S5821-03 Dimensional outline/ Window material * ➀/K ➁/L ➂/K ➃/L Package Active area size Effective active area (mm) (mm) (mm2) Reverse voltage VR Max. (V) TO-18 φ1.2 1.1 20 Absolute maximum ratings Power Operating Storage dissipation temperature temperature P Topr Tstg (mW) (°C) (°C) 50 -40 to +100 -55 to +125 ■ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Photo sensitivity S (A/W) Terminal Short Dark Temp. Cut-off NEP capacitance circuit current coefficient frequency VR=10 V Ct current ID of ID fc Type No. VR=10 V VR=10 V Isc λ=λp TCID VR=10 V (nA) f=1 MHz λp 660 nm 780 nm 830 nm 100 lx (nm) (nm) (µA) Typ. Max. (times/°C) (MHz) (pF) (W/Hz1/2) S5821 1.1 S5821-01 12 320 to 1100 960 0.6 0.45 0.52 0.55 0.05 2 1.15 25 3 6.7 × 10-15 S5821-02 1.1 12 S5821-03 * Window material K: borosilicate glass, L: lens type borosilicate glass Spectral Peak response sensitivity range wavelength λp λ 1 Si PIN photodiode ■ Spectral response S5821 series ■ Directivity 20˚ (Typ. Ta=25 ˚C) 0.7 10˚ 0˚ 10˚ (Typ. Ta=25 ˚C) 20˚ 100 % 30˚ 30˚ PHOTO SENSITIVITY (A/W) 0.6 80 % 0.5 40˚ 0.4 S5821 S5821-02 40˚ 60 % 50˚ 0.3 50˚ 40 % 60˚ 0.2 70˚ S5821-01 S5821-03 60˚ 70˚ 20% 0.1 0 200 400 600 800 80˚ 80˚ 90˚ 90˚ 1000 WAVELENGTH (nm) RELATIVE SENSITIVITY KPINB0091EA KPINB0151EA ■ Photo sensitivity temperature characteristic (Typ.) +1.5 +10 +1.0 RELATIVE OUTPUT (dB) TEMPERATURE COEFFICIENT (%/˚C) ■ Frequency response +0.5 0 -0.5 200 400 600 800 -3 -10 1 MHz 10 MHz 100 MHz 1 GHz FREQUENCY WAVELENGTH (nm) KPINB0152EA 2 0 -20 100 kHz 1000 (Typ. Ta=25 ˚C, λ=830 nm, RL=50 Ω, VR=10 V) KPINB0153EA Si PIN photodiode ■ Cut-off frequency vs. reverse voltage 100 MHz 10 MHz 1 MHz 1 10 (Typ. Ta=25 ˚C) 1 nA DARK CURRENT CUT-OFF FREQUENCY ■ Dark current vs. reverse voltage (Typ. Ta=25 ˚C, λ=830 nm, RL=50 Ω) 1 GHz S5821 series 100 REVERSE VOLTAGE (V) 100 pA 10 pA 1 pA 0.1 1 10 100 REVERSE VOLTAGE (V) KPINB0154EA KPINB0155EA ■ Terminal capacitance vs. reverse voltage (Typ. Ta=25 ˚C, f=1 MHz) TERMINAL CAPACITANCE 100 pF 10 pF 1 pF 0.1 1 10 100 REVERSE VOLTAGE (V) KPINB0156EA 3 Si PIN photodiode S5821 series ■ Dimensional outline (unit: mm) ➁ S5821-01 4.65 ± 0.1 2.3 14 0.45 LEAD 8.5 0.45 LEAD 4.5 ± 0.2 5.4 ± 0.2 3.6 ± 0.2 5.4 ± 0.2 4.7 ± 0.1 2.8 WINDOW 3.0 ± 0.2 2.15 ± 0.3 ➀ S5821 2.54 ± 0.2 2.54 ± 0.2 CONNECTED TO CASE CONNECTED TO CASE KPINA0074EB 4.65 ± 0.1 3.6 ± 0.2 4.7 ± 0.1 2.8 0.45 LEAD 13 0.45 LEAD 5.4 ± 0.2 13 PHOTOSENSITIVE SURFACE 5.4 ± 0.2 2.8 WINDOW 3.0 ± 0.2 2.15 ± 0.3 ➃ S5821-03 4.5 ± 0.2 ➂ S5821-02 KPINA0075EA 2.54 ± 0.2 2.54 ± 0.2 CASE CASE KPINA0022EB KPINA0046EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 4 Cat. No. KPIN1010E02 Aug. 2006 DN