HAMAMATSU S2506-04

PHOTODIODE
Si PIN photodiode
S2506/S6775/S6967 series, S6786
Plastic SIP (Single In-line Package)
S2506/S6775/S6967 series and S6786 are Si PIN photodiodes with large active areas, molded into a clear or visible-cut plastic SIP (Single In-line
Package) for detecting visible to near infrared range or near infrared range only. These Si PIN photodiodes feature high sensitivity, high-speed
response and large active areas, allowing you to choose the optimum type that best matches your application.
Features
Applications
l S2506-02: Visible to near infrared range
l Spatial light transmission
S2506-04: Visible-cut
l Optical switches
S6786 : Visible to near infrared range, high sensitivity,
l Laser radar, etc.
high-speed response
S6775, S6967: Visible to near infrared range, high sensitivity,
high-speed response, large active area
S6775-01, S6967-01: Visible-cut, high sensitivity,
high-speed response, large active area
l Plastic package: 7 × 7.8 mm
l Active area size
S2506 series, S6786: 2.77 × 2.77 mm
S6775/S6967 series : 5.5 × 4.8 mm
■ General ratings / Absolute maximum ratings
Type No.
S2506-02
S2506-04
S6786
S6775
S6775-01
S6967
S6967-01
Dimensional
Package
outline
➀
Active area Effective active
size
area
(mm)
(mm2)
2.77 × 2.77
7.7
Plastic
Reverse
voltage
VR Max.
(V)
Absolute maximum ratings
O p erating
Power
Storage
dissipation te m p erature te m p erature
P
Topr
Tstg
(mW)
(°C)
(°C)
150
35
➁
5.5 × 4.8
26.4
-25 to +85
-40 to +100
50
■ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type No.
S2506-02
S2506-04
S6786
S6775
S6775-01
S6967
S6967-01
*1: VR=12 V
*2: VR=10 V
Peak
Spectral
response sensitivity
range wavelength
λp
λ
(nm)
320 to 1100
760 to 1100
320 to 1060
320 to 1100
700 to 1100
320 to 1060
700 to 1060
Photo sensitivity
S
(A/W)
λp 660 n m 780 n m 830 n m
(nm)
0.4
-
0.48 0.5
0.25
960
0.56
900
0.65
0.45 0.55 0.6
0.7
0.68
0.48 0.54
0.65 0.45 0.55 0.6
0.63
0.48 0.54
960
900
T e m p.
Cut-off
Short
Terminal
coefficient frequency
circuit
capacitance
Dark current
fc
of
current
NEP
ID
Ct
RL=50 Ω
ID
Isc
f=1 MHz
-3 dB
TCID
100 lx
Typ. Max.
(µA) (nA) (nA) (times/° C) (MHz)
(pF)
(W/Hz1/2)
7.3
0.1 *1 10 * 1
25 * 1
15 * 1
1.0 × 10-14 * 1
4.1
7.5 0.3 * 2 5 * 2
60 * 2
15 * 2
1.5 × 10-14 * 2
30
1.15
1.8 × 10-14 * 2
10 * 2
15 * 2
40 * 2
21
1.9 × 10-14 * 2
0.5 * 2
26
5 *2
50 * 2
50 * 2
2.0 × 10-14 * 2
18
1
Si PIN photodiode
S2506/S6775/S6967 series, S6786
■ Photo sensitivity temperature characteristic
(S2506-02)
■ Spectral response
S2506 series, S6786
S6775/S6967 series
(Typ. Ta=25 ˚C)
(Typ. Ta=25 ˚C)
S2506-02
0.5
S6786
PHOTO SENSITIVITY (A/W)
PHOTO SENSITIVITY (A/W)
S6775-01
0.7
QE=100 %
0.6
0.4
0.3
0.2
0.1
400
600
800
QE=100 %
0.6
0.5
S6967
0.4
0.3
S6967-01
0.2
0.1
S2506-04
0
200
0
200
1000
400
WAVELENGTH (nm)
600
800
400
600
800
1000
WAVELENGTH (nm)
KPINB0063EC
KPINB0349EA
(Typ.)
10 µA
DARK CURRENT
S6967/-01
S6775/-01
100 pA
S6786
10 pA
(Typ. Ta=25 ˚C, f=1 MHz)
1 nF
S6775/-01, S6967/-01 (VR=10 V)
S6967/-01
TERMINAL CAPACITANCE
1 µA
DARK CURRENT
0
■ Dark current vs. ambient temperature ■ Terminal capacitance vs.
reverse voltage
(Typ. Ta=25 ˚C)
S2506-02/-04
+0.5
WAVELENGTH (nm)
■ Dark current vs. reverse voltage
1 nA
+1.0
-0.5
200
1000
KPINB0348EA
10 nA
TEMPERATURE COEFFICIENT (%/˚C)
S6775
0.7
(Typ.)
+1.5
0.8
0.8
100 nA
S6786 (VR=10 V)
S2506-02/-04 (VR=12 V)
10 nA
1 nA
100 pA
S6775/-01
S6786
S2506-02/-04
100 pF
S6786
10 pF
S2506-02/-04
10 pA
1 pA
0.01
0.1
1
10
1 pA
-20
100
REVERSE VOLTAGE (V)
0
20
40
60
10˚
0˚
10
100
REVERSE VOLTAGE (V)
KPINB0169EB
KPINB0170EB
■ Dimensional outline (unit: mm, tolerance unless otherwise noted: ±0.1)
■ Directivity (S2506-02)
20˚
1
AMBIENT TEMPERATURE (˚C)
KPINB0168EB
30˚
1 pF
0.1
80
10˚
7.0 ± 0.2
(Typ. Ta=25 ˚C)
20˚
30˚
3.5 ± 0.2
CENTER OF
ACTIVE AREA
2.7 ± 0.2 0.2 MAX.
40˚
50˚
14.3 ± 1
60 %
50˚
5.0
a
INCIDENT LIGHT
(6.45)
40˚
ACTIVE AREA
b
1.0
0.5
1.1
1.4
2.3 ± 0.3
80 %
7.8 ± 0.2
100 %
40 %
60˚
60˚
70˚
70˚
80˚
80˚
90˚
90˚
0.5
5.08
20 %
Type No.
RELATIVE SENSITIVITY
S2506 series
S6786
KPINB0065EB
(0.3)
(0.5)
(0.5)
(0.3)
(0.4)
1.0
(0.6)
1.0
(0.6)
(0.4)
a
b
2.8 ± 0.2
2.77 × 2.77
S6775/S6967
3.65 ± 0.2
series
5.5 × 4.8
DETAILS OF LEAD ROOT
KPINA0084EB
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
2
Cat. No. KPIN1048E02
Jun. 2006 DN