PHOTODIODE Si PIN photodiode S2506/S6775/S6967 series, S6786 Plastic SIP (Single In-line Package) S2506/S6775/S6967 series and S6786 are Si PIN photodiodes with large active areas, molded into a clear or visible-cut plastic SIP (Single In-line Package) for detecting visible to near infrared range or near infrared range only. These Si PIN photodiodes feature high sensitivity, high-speed response and large active areas, allowing you to choose the optimum type that best matches your application. Features Applications l S2506-02: Visible to near infrared range l Spatial light transmission S2506-04: Visible-cut l Optical switches S6786 : Visible to near infrared range, high sensitivity, l Laser radar, etc. high-speed response S6775, S6967: Visible to near infrared range, high sensitivity, high-speed response, large active area S6775-01, S6967-01: Visible-cut, high sensitivity, high-speed response, large active area l Plastic package: 7 × 7.8 mm l Active area size S2506 series, S6786: 2.77 × 2.77 mm S6775/S6967 series : 5.5 × 4.8 mm ■ General ratings / Absolute maximum ratings Type No. S2506-02 S2506-04 S6786 S6775 S6775-01 S6967 S6967-01 Dimensional Package outline ➀ Active area Effective active size area (mm) (mm2) 2.77 × 2.77 7.7 Plastic Reverse voltage VR Max. (V) Absolute maximum ratings O p erating Power Storage dissipation te m p erature te m p erature P Topr Tstg (mW) (°C) (°C) 150 35 ➁ 5.5 × 4.8 26.4 -25 to +85 -40 to +100 50 ■ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Type No. S2506-02 S2506-04 S6786 S6775 S6775-01 S6967 S6967-01 *1: VR=12 V *2: VR=10 V Peak Spectral response sensitivity range wavelength λp λ (nm) 320 to 1100 760 to 1100 320 to 1060 320 to 1100 700 to 1100 320 to 1060 700 to 1060 Photo sensitivity S (A/W) λp 660 n m 780 n m 830 n m (nm) 0.4 - 0.48 0.5 0.25 960 0.56 900 0.65 0.45 0.55 0.6 0.7 0.68 0.48 0.54 0.65 0.45 0.55 0.6 0.63 0.48 0.54 960 900 T e m p. Cut-off Short Terminal coefficient frequency circuit capacitance Dark current fc of current NEP ID Ct RL=50 Ω ID Isc f=1 MHz -3 dB TCID 100 lx Typ. Max. (µA) (nA) (nA) (times/° C) (MHz) (pF) (W/Hz1/2) 7.3 0.1 *1 10 * 1 25 * 1 15 * 1 1.0 × 10-14 * 1 4.1 7.5 0.3 * 2 5 * 2 60 * 2 15 * 2 1.5 × 10-14 * 2 30 1.15 1.8 × 10-14 * 2 10 * 2 15 * 2 40 * 2 21 1.9 × 10-14 * 2 0.5 * 2 26 5 *2 50 * 2 50 * 2 2.0 × 10-14 * 2 18 1 Si PIN photodiode S2506/S6775/S6967 series, S6786 ■ Photo sensitivity temperature characteristic (S2506-02) ■ Spectral response S2506 series, S6786 S6775/S6967 series (Typ. Ta=25 ˚C) (Typ. Ta=25 ˚C) S2506-02 0.5 S6786 PHOTO SENSITIVITY (A/W) PHOTO SENSITIVITY (A/W) S6775-01 0.7 QE=100 % 0.6 0.4 0.3 0.2 0.1 400 600 800 QE=100 % 0.6 0.5 S6967 0.4 0.3 S6967-01 0.2 0.1 S2506-04 0 200 0 200 1000 400 WAVELENGTH (nm) 600 800 400 600 800 1000 WAVELENGTH (nm) KPINB0063EC KPINB0349EA (Typ.) 10 µA DARK CURRENT S6967/-01 S6775/-01 100 pA S6786 10 pA (Typ. Ta=25 ˚C, f=1 MHz) 1 nF S6775/-01, S6967/-01 (VR=10 V) S6967/-01 TERMINAL CAPACITANCE 1 µA DARK CURRENT 0 ■ Dark current vs. ambient temperature ■ Terminal capacitance vs. reverse voltage (Typ. Ta=25 ˚C) S2506-02/-04 +0.5 WAVELENGTH (nm) ■ Dark current vs. reverse voltage 1 nA +1.0 -0.5 200 1000 KPINB0348EA 10 nA TEMPERATURE COEFFICIENT (%/˚C) S6775 0.7 (Typ.) +1.5 0.8 0.8 100 nA S6786 (VR=10 V) S2506-02/-04 (VR=12 V) 10 nA 1 nA 100 pA S6775/-01 S6786 S2506-02/-04 100 pF S6786 10 pF S2506-02/-04 10 pA 1 pA 0.01 0.1 1 10 1 pA -20 100 REVERSE VOLTAGE (V) 0 20 40 60 10˚ 0˚ 10 100 REVERSE VOLTAGE (V) KPINB0169EB KPINB0170EB ■ Dimensional outline (unit: mm, tolerance unless otherwise noted: ±0.1) ■ Directivity (S2506-02) 20˚ 1 AMBIENT TEMPERATURE (˚C) KPINB0168EB 30˚ 1 pF 0.1 80 10˚ 7.0 ± 0.2 (Typ. Ta=25 ˚C) 20˚ 30˚ 3.5 ± 0.2 CENTER OF ACTIVE AREA 2.7 ± 0.2 0.2 MAX. 40˚ 50˚ 14.3 ± 1 60 % 50˚ 5.0 a INCIDENT LIGHT (6.45) 40˚ ACTIVE AREA b 1.0 0.5 1.1 1.4 2.3 ± 0.3 80 % 7.8 ± 0.2 100 % 40 % 60˚ 60˚ 70˚ 70˚ 80˚ 80˚ 90˚ 90˚ 0.5 5.08 20 % Type No. RELATIVE SENSITIVITY S2506 series S6786 KPINB0065EB (0.3) (0.5) (0.5) (0.3) (0.4) 1.0 (0.6) 1.0 (0.6) (0.4) a b 2.8 ± 0.2 2.77 × 2.77 S6775/S6967 3.65 ± 0.2 series 5.5 × 4.8 DETAILS OF LEAD ROOT KPINA0084EB Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KPIN1048E02 Jun. 2006 DN