PHOTO IC Photo IC diode S7183, S7184 Linear current amplification of photodiode output S7183 and S7184 consist of a photodiode and a signal processing circuit for amplifying the photocurrent generated from the photodiode up to 1300 times. Despite a small active area, these photo ICs provide an output nearly equal to that from photodiodes with a 20 × 20 mm active area. Both S7183 and S7184 can be used the same way as a reverse-biased photodiode, and in most cases, they deliver a sufficient output voltage by just connecting a load resistor. Features Applications l Clear plastic package l Operation just as easy as using photodiodes l Large output current rivaling that of a phototransistor l Good linearity l Energy saving sensors for TV brightness controls, etc. l Light dimmers for liquid crystal panels l Various types of light level measurement ■ Absolute maximum ratings (Ta=25 °C) Parameter Reverse voltage Photocurrent Forward current Power dissipation *1 Operating temperature Storage temperature Symbol VR IL IF P Topr Tstg Value -0.5 to 16 10 10 250 -30 to +80 -40 to +85 S7183 260 °C, 3 s, at least 2.5 mm away from package surface Soldering S7184 230 °C, 5 s, *1: Derate power dissipation at a rate of 3.3 mW/°C above Ta=25 °C Unit V mA mA mW °C °C - ■ Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Operating reverse voltage Dark current Symbol Condition λ λp VR ID VR=5 V VR=5 V S7183, 100 lx Photocurrent IL 2856 K S7184, 1000 lx 10 to 90 %, *2 VR=5 V, RL=10 kΩ Rise/fall time tr, tf λ=660 nm *2: Rise/fall time measurement method l=660 nm 2.5 V 90 % LED PULSE DRIVE VO 10 % 0.1 µF 7.5 V tr tf VO LOAD RESISTANCE RL KPICC0041EA Min. 3 0.75 1.4 Typ. 300 to 1000 650 0.5 1.0 1.8 Max. 12 10 1.25 2.2 Unit nm nm V nA - 0.6 - ms mA Photo IC diode ■ Spectral response ■ Dark current vs. ambient temperature (Typ. Ta=25 ˚C, VR=5 V) 1.0 10 µA ■ Rise/fall time vs. load resistance (Typ. VR=5 V) (Typ. Ta=25 ˚C, VR=5 V, λ=560 nm, Vo=2.5 V) 100 1 µA 0.8 0.6 0.5 0.4 0.3 10 RISE/FALL TIME (ms) 100 nA 0.7 DARK CURRENT RELATIVE SENSITIVITY 0.9 S7183, S7184 10 nA 1 nA 100 pA 10 pA 1 0.1 0.2 1 pA 0.1 0 200 400 600 800 1000 100 fA -25 1200 WAVELENGTH (nm) 0 25 50 75 0.01 100 100 1k 10 k 100 k 1M LOAD RESISTANCE (Ω) AMBIENT TEMPERATURE (˚C) KPICB0036EA KPICB0043EA KPICB0042EA ■ Operating circuit example DRAWING WITHIN DASHED LINE SHOWS SCHEMATIC DIAGRAM OF PHOTO IC DIODE. The photodiode must be reverse-biased so that a positive potential is applied to the cathode. ANODE CATHODE To eliminate high-frequency components, we recommend placing a load capacitance CL in parallel with load REVERSE BIAS POWER SUPPLY LOAD RESISTANCE RL LOAD CAPACITANCE FOR LOW-PASS FILTER CL resistance RL as a low-pass filter. Cut-off frequency fc 1 2πCLRL KPICC0018EA ■ Dimensional outlines (unit: mm) S7183 S7184 4.3 ± 0.3 (INCLUDING BURR) 3.0 2.4 10˚ 0.6 1.5 ± 0.4 1.4 10˚ 5˚ 1.5 ± 0.4 4.0* 0.8 1.8 +0.6 5˚ Pins and connected to PC board. 2.54 ± 0.5 (SPECIFIED AT THE LEAD ROOT) CATHODE ANODE Tolerance unless otherwise noted: ±0.2, ±2˚ Shaded area indicates burr. Values in parentheses are not guaranteed, but for reference. Tolerance unless otherwise noted: ±0.1, ±2˚ Shaded area indicates burr. Chip position accuracy with respect to the package dimensions marked * X≤±0.25, Y≤±0.25, q≤±2˚ 0.1 ± 0.1 5˚ 0.45 CATHODE (ANODE) ANODE (ANODE) 10˚ 15 MIN. 0.45 0.7 ± 0.3 0.7 ± 0.3 0.25 10˚ (0.8) (1.2) R 0.9 7.0 ± 0.3 4.6 -0.3 (INCLUDING BURR) 4.43 1.43 1.7 0.6 ± 0.3 4.8 4.7* 0.47 2.54 0.6 5˚ 5.0 ± 0.2 (INCLUDING BURR) 4.1 ± 0.2 (INCLUDING BURR) CENTER OF ACTIVE AREA 4.15 must be on the KPICA0017EB KPICA0018EB Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)" which means developmental specifications. ©2009 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KPIC1022E03 Aug. 2009 DN