HAMAMATSU S7184

PHOTO IC
Photo IC diode
S7183, S7184
Linear current amplification of photodiode output
S7183 and S7184 consist of a photodiode and a signal processing circuit for amplifying the photocurrent generated from the photodiode up to
1300 times. Despite a small active area, these photo ICs provide an output nearly equal to that from photodiodes with a 20 × 20 mm active area.
Both S7183 and S7184 can be used the same way as a reverse-biased photodiode, and in most cases, they deliver a sufficient output voltage by
just connecting a load resistor.
Features
Applications
l Clear plastic package
l Operation just as easy as using photodiodes
l Large output current rivaling that of a phototransistor
l Good linearity
l Energy saving sensors for TV brightness controls, etc.
l Light dimmers for liquid crystal panels
l Various types of light level measurement
■ Absolute maximum ratings (Ta=25 °C)
Parameter
Reverse voltage
Photocurrent
Forward current
Power dissipation *1
Operating temperature
Storage temperature
Symbol
VR
IL
IF
P
Topr
Tstg
Value
-0.5 to 16
10
10
250
-30 to +80
-40 to +85
S7183
260 °C, 3 s, at least 2.5 mm away from package surface
Soldering
S7184
230 °C, 5 s,
*1: Derate power dissipation at a rate of 3.3 mW/°C above Ta=25 °C
Unit
V
mA
mA
mW
°C
°C
-
■ Electrical and optical characteristics (Ta=25 °C)
Parameter
Spectral response range
Peak sensitivity wavelength
Operating reverse voltage
Dark current
Symbol
Condition
λ
λp
VR
ID
VR=5 V
VR=5 V S7183, 100 lx
Photocurrent
IL
2856 K S7184, 1000 lx
10 to 90 %, *2
VR=5 V, RL=10 kΩ
Rise/fall time
tr, tf
λ=660 nm
*2: Rise/fall time measurement method
l=660 nm
2.5 V
90 %
LED
PULSE DRIVE
VO
10 %
0.1 µF
7.5 V
tr
tf
VO
LOAD RESISTANCE RL
KPICC0041EA
Min.
3
0.75
1.4
Typ.
300 to 1000
650
0.5
1.0
1.8
Max.
12
10
1.25
2.2
Unit
nm
nm
V
nA
-
0.6
-
ms
mA
Photo IC diode
■ Spectral response
■ Dark current vs. ambient
temperature
(Typ. Ta=25 ˚C, VR=5 V)
1.0
10 µA
■ Rise/fall time vs. load resistance
(Typ. VR=5 V)
(Typ. Ta=25 ˚C, VR=5 V, λ=560 nm, Vo=2.5 V)
100
1 µA
0.8
0.6
0.5
0.4
0.3
10
RISE/FALL TIME (ms)
100 nA
0.7
DARK CURRENT
RELATIVE SENSITIVITY
0.9
S7183, S7184
10 nA
1 nA
100 pA
10 pA
1
0.1
0.2
1 pA
0.1
0
200
400
600
800
1000
100 fA
-25
1200
WAVELENGTH (nm)
0
25
50
75
0.01
100
100
1k
10 k
100 k
1M
LOAD RESISTANCE (Ω)
AMBIENT TEMPERATURE (˚C)
KPICB0036EA
KPICB0043EA
KPICB0042EA
■ Operating circuit example
DRAWING WITHIN DASHED
LINE SHOWS SCHEMATIC
DIAGRAM OF PHOTO IC DIODE.
The photodiode must be reverse-biased
so that a positive potential is applied to the
cathode.
ANODE
CATHODE
To
eliminate
high-frequency
components, we recommend placing a
load capacitance CL in parallel with load
REVERSE BIAS
POWER SUPPLY
LOAD RESISTANCE RL
LOAD CAPACITANCE
FOR
LOW-PASS FILTER CL
resistance RL as a low-pass filter.
Cut-off frequency fc
1
2πCLRL
KPICC0018EA
■ Dimensional outlines (unit: mm)
S7183
S7184
4.3 ± 0.3
(INCLUDING BURR)
3.0
2.4
10˚
0.6
1.5 ± 0.4
1.4
10˚
5˚
1.5 ± 0.4
4.0*
0.8
1.8
+0.6
5˚
Pins
and
connected to
PC board.
2.54 ± 0.5
(SPECIFIED AT THE LEAD ROOT)
CATHODE
ANODE
Tolerance unless otherwise
noted: ±0.2, ±2˚
Shaded area indicates burr.
Values in parentheses are not
guaranteed, but for reference.
Tolerance unless otherwise
noted: ±0.1, ±2˚
Shaded area indicates burr.
Chip position accuracy with
respect to the package
dimensions marked *
X≤±0.25, Y≤±0.25, q≤±2˚
0.1 ± 0.1
5˚
0.45
CATHODE
(ANODE)
ANODE
(ANODE)
10˚
15 MIN.
0.45
0.7 ± 0.3
0.7 ± 0.3
0.25
10˚
(0.8)
(1.2)
R 0.9
7.0 ± 0.3
4.6 -0.3
(INCLUDING BURR)
4.43
1.43
1.7
0.6 ± 0.3
4.8
4.7*
0.47
2.54
0.6
5˚
5.0 ± 0.2
(INCLUDING BURR)
4.1 ± 0.2
(INCLUDING BURR) CENTER OF
ACTIVE AREA
4.15
must be
on the
KPICA0017EB
KPICA0018EB
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.
Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)"
which means developmental specifications. ©2009 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KPIC1022E03
Aug. 2009 DN