PHOTODIODE Si APD S8664 series Short wavelength type APD Features Applications l Low-light-level measurement l Analytical equipment l High sensitivity at visible range l Low noise l High gain l Low capacitance ■ General ratings / Absolute maximum ratings Type No. S8664-02K S8664-05K S8664-10K S8664-20K S8664-30K S8664-50K S8664-55 S8664-1010 Dimensional outline /Window material *1 Package ➀/K TO-5 ➁/K TO-8 ➂/E ➃/E Ceramic Effective *2 active area size Effective active area (mm) φ0.2 φ0.5 φ1.0 φ2.0 φ3.0 φ5.0 5×5 10 × 10 (mm2) 0.03 0.19 0.78 3.14 7.0 19.6 25 100 Absolute maximum ratings Operating Storage temperature temperature Topr Tstg (°C) (°C) -55 to +100 -20 to +60 -20 to +80 ■ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Photo Quantum Spectral Peak * 3 Breakdown Excess *3 Temperature sensitivity efficiency Dark *3 Cut-off Terminal * 3 Gain response sensitivity Noise voltage coefficient of frequency capacitance current M S QE range wavelength index VBR M=1 M=1 VBR fc Ct ID λ=420 nm Type No. ID=100 µA λ λp λ=420 nm λ=420 nm λ=420 nm Typ. Max. Typ. Max. (nm) (nm) (A/W) (%) (V) (V) (V/°C) (nA) (nA) (MHz) (pF) S8664-02K 0.1 1 700 0.8 S8664-05K 0.2 1.5 680 1.6 S8664-10K 0.3 3 530 4 S8664-20K 0.6 6 280 11 320 to 600 0.24 70 400 500 0.78 0.2 50 1000 S8664-30K 1 15 140 22 S8664-50K 3 35 60 55 S8664-55 5 50 40 80 S8664-1010 10 100 11 270 *1: K: Borosilicate glass E: Epoxy resin *2: Area in which a typical gain can be obtained. *3: Values measured at a gain listed in the characteristics table. 1 Si APD ■ Spectral response S8664 series ■ Quantum efficiency vs. wavelength (Typ. M=50) 25 (Typ. Ta=25 ˚C) 100 S8664-55/-1010 S8664-02K/-05K/-10K/ -20K/-30K/-50K 20 QUANTUM EFFICIENCY (%) PHOTO SENSITIVITY (A/W) S8664-55/-1010 15 10 5 0 200 400 600 800 1000 80 60 20 0 200 1200 S8664-02K/-05K/-10K/ -20K/-30K/-50K 40 WAVELENGTH (nm) 400 600 800 1000 WAVELENGTH (nm) KAPDB0073EB ■ Dark current vs. reverse voltage KAPDB0074EB ■ Gain vs. reverse voltage (Typ. Ta=25 ˚C) 1 µA 100 nA (Typ. λ=420 nm) 1000 S8664-55 -20 ˚C S8664-50K S8664-1010 10 nA 100 0 ˚C S8664-30K 20 ˚C GAIN DARK CURRENT 1200 1 nA 100 pA 40 ˚C 10 S8664-10K 10 pA 60 ˚C S8664-02K 1 pA 100 200 300 400 500 REVERSE VOLTAGE (V) ■ Terminal capacitance vs. reverse voltage (Typ. Ta=25 ˚C, f=10 kHz) TERMINAL CAPACITANCE S8664-55 S8664-1010 S8664-30K 1 nF S8664-50K 100 pF 10 pF 1 pF S8664-10K 100 fF 0 100 S8664-02K 200 300 400 500 REVERSE VOLTAGE (V) KAPDB0077EB 2 300 400 500 REVERSE VOLTAGE (V) KAPDB0075EB 10 nF 1 200 KAPDB0076EB Si APD S8664 series ■ Dimensional outlines (unit: mm) ➀ S8664-02K/-05K/-10K/-20K ➁ S8664-30K/-50K 9.1 ± 0.2 13.9 ± 0.2 8.1 ± 0.1 12.35 ± 0.1 5.9 ± 0.1 10.5 ± 0.2 Y X ACTIVE AREA a ACTIVE AREA a 4.2 ± 0.2 4.9 3.1 0.5 MAX. 0.45 LEAD (20) 0.4 MAX. 2.8 PHOTOSENSITIVE SURFACE 0.45 LEAD (15) PHOTOSENSITIVE SURFACE 7.5 ± 0.2 5.08 ± 0.2 INDEX MARK 1.4 The glass window may extend a maximum of 0.2 mm beyond the upper surface of the cap. Type No. 1.5 MAX. CASE a S8664-02K 0.2 S8664-05K 0.5 S8664-10K 1.0 S8664-20K 2.0 The glass window may extend a maximum of 0.2 mm beyond the upper surface of the cap. 1.0 MAX. CASE Type No. a S8664-30K 3.0 S8664-50K 5.0 KAPDA0026EA ➂ S8664-55 KAPDA0027EA ➃ S8664-1010 (4 ×) C0.5 10.6 14.5 5.0 PHOTOSENSITIVE SURFACE 1.18 EPOXY RESIN 0.70 5 0.80 1.2 5.0 0.3 MAX. 1.65 1.78 EPOXY RESIN (0.2) 9.0 PHOTOSENSITIVE SURFACE 0.4 * ACTIVE AREA 5×5 5.0 0.46 0.45 5.08 5.08 2.0 6.0 0.5 1.5 ACTIVE AREA 10 × 10 13.7 * From center of active area to center of package (3.0) (5.5) INDEX MARK 0.5 General tolerance: ±0.2 (2 ×) 2 KAPDA0022EA General tolerance: ±0.2 KAPDA0036EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2005 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KAPD1012E04 Sept. 2005 DN