PHOTODIODE Si APD S5343 to S5345, S9073 to S9075 Short wavelength type APD Features Applications l High sensitivity and low noise in UV to visible range l Low-light-level measurement l Analytical equipment ■ General ratings / Absolute maximum ratings Type No. S9073 S9074 S5343 S9075 S5344 S5345 Dimensional outline/ Window material *1 Package ➀/U TO-18 ➁/U TO-5 ➂/U TO-8 Effective active *2 area size Effective active area (mm) φ0.2 φ0.5 φ1.0 φ1.5 φ3.0 φ5.0 (mm2) 0.03 0.19 0.78 1.77 7.0 19.6 Absolute maximum ratings Operating Storage temperature temperature Topr Tstg (°C) (°C) -20 to +60 -55 to +100 ■ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Type No. S p ectral response range λ (nm) Photo Quantum B reakd o w n Peak * 3 Tem p. sensitivity efficiency voltage sensitivity coefficient S QE VBR wavelength of M=1 M=1 ID=100 µA VBR λp λ=620 nm λ=620 nm (nm) (A/W) (%) Typ. Max. (V) (V) S9073 S9074 S5343 200 to 1 00 0 620 0.42 80 150 200 S9075 S5344 S5345 *1: U: UV glass *2: Area in which a typical gain can be obtained. *3: Values measured at a gain listed in the characteristics table. (V/°C) 0.14 Dark *3 Cut-off *3 Term inal *3 current frequency capacitance fc ID Ct RL=50 Ω Typ. Max. (nA) (nA) (MHz) 900 400 0.2 5 250 0.5 15 100 1 30 25 3 100 8 (pF) 3 7 15 30 120 320 Excess *3 noise Gain figure M x λ=65 0 nm λ=650 nm 0.28 50 1 S5343 to S5345, S9073 to S9075 Si APD ■ Spectral response ■ Quantum efficiency vs. wavelength (Typ. Ta=25 ˚C) 30 (Typ. Ta=25 ˚C) 100 QUANTUM EFFICIENCY (%) PHOTO SENSITIVITY (A/W) M=50 20 M=20 10 M=10 0 200 400 600 800 80 60 40 20 0 200 1000 WAVELENGTH (nm) 400 600 800 1000 WAVELENGTH (nm) KAPDB0010ED ■ Dark current vs. reverse voltage KAPDB0023EB ■ Gain vs. reverse voltage (Typ. Ta=25 ˚C) 10 nA (Typ. λ=650 nm) 103 S5345 -20 ˚C 102 S5344 100 pA S9073 S9075 0 ˚C 20 ˚C GAIN DARK CURRENT 1 nA 40 ˚C 101 60 ˚C S9074 10 pA S5343 1 pA 0 50 100 150 200 140 150 160 REVERSE VOLTAGE (V) REVERSE VOLTAGE (V) KAPDB0009ED 2 100 130 KAPDB0011EC Si APD S5343 to S5345, S9073 to S9075 ■ Terminal capacitance vs. reverse voltage (Typ. Ta=25 ˚C, f=1 MHz) 1 nF S5345 (Typ. Ta=25 ˚C, f=10 kHz, B=1 Hz) 10 S5344 λ=800 nm EXCESS NOISE FIGURE TERMINAL CAPACITANCE ■ Excess noise figure vs. gain 100 pF S5343 S9075 10 pF M0.5 M0.3 λ=650 nm S9074 M0.2 S9073 1 pF 0 50 100 150 200 REVERSE VOLTAGE (V) 1 1 10 100 GAIN KAPDB0015EC KAPDB0013EA 3 Si APD S5343 to S5345, S9073 to S9075 ■ Dimensional outlines (unit: mm) ➀ S9073, S9074, S5343 ➁ S9075, S5344 9.1 ± 0.2 0.45 LEAD 0.4 MAX. 0.45 LEAD 4.2 ± 0.2 (20) 2.8 PHOTOSENSITIVE SURFACE 13 PHOTOSENSITIVE SURFACE 8.1 ± 0.1 2.8 WINDOW 5.9 ± 0.1 3.6 ± 0.2 4.7 ± 0.1 0.4 MAX. 5.4 ± 0.2 WINDOW 3.0 ± 0.2 5.08 ± 0.2 2.54 ± 0.2 1.2 MAX. 1.5 MAX. The glass window may extend a maximum of 0.1 mm beyond the upper surface of the cap. CASE CASE The glass window may extend a maximum of 0.2 mm beyond the upper surface of the cap. KAPDA0014EA KAPDA0015EA ➂ S5345 13.9 ± 0.2 12.35 ± 0.1 0.5 MAX. 3.1 PHOTOSENSITIVE SURFACE 0.45 LEAD (15) 4.9 WINDOW 10.5 ± 0.2 7.5 ± 0.2 INDEX MARK 1.4 1.0 MAX. CASE The glass window may extend a maximum of 0.2 mm beyond the upper surface of the cap. KAPDA0016EB Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 4 Cat. No. KAPD1001E05 Apr. 2004 DN