HANBIT HMD8M36M6E

HANBit
HMD8M36M6EG
32Mbyte(8Mx36) 72-pin SIMM EDO with Parity Mode, 4K Ref. 5V
Part No. HMD8M36M6E, HMD8M36M6EG
GENERAL DESCRIPTION
The HMD8M36M6E is a 8M x 36bit dynamic RAM high density memory module. The module consists of four CMOS 4M
x 16 bit DRAMs in 50-pin TSOP packages and two CMOS 4M x 4bit Quad CAS DRAM in 28pin SOJ package mounted on
a 72-pin, double-sided, FR-4-printed circuit board. A 0.1uF or 0.22uF decoupling capacitor is mounted on the printed
circuit board for each DRAM components.
The module is a single In-line memory module with edge connections and is intended for mounting in to 72-pin edge
connector sockets. All module components may be powered from a single 5V DC power supply and all inputs and outputs
are TTL-compatible.
FEATURES
w Part Identification
PIN ASSIGNMENT
HMD8M36M6E----4K Cycles/64ms Ref. Solder
HMD8M36M6EG- 4K Cycles/64ms Ref. Gold
PIN
SYMBOL
PIN
SYMBOL
PIN
SYMBOL
w Access times : 50, 60ns
1
Vss
25
DQ24
49
DQ9
w High-density 32MByte design
2
DQ0
26
DQ7
50
DQ27
w Single +5V ± 0.5V power supply
3
DQ18
27
DQ25
51
DQ10
w JEDEC Standard pinout
4
DQ1
28
A7
52
DQ28
w EDO mode operation
5
DQ19
29
A11
53
DQ11
w TTL compatible inputs and outputs
6
DQ2
30
Vcc
54
DQ29
w FR4-PCB design
7
DQ20
31
A8
55
DQ12
8
DQ3
32
A9
56
DQ30
9
DQ21
33
NC
57
DQ13
10
Vcc
34
NC
58
DQ31
-5
11
NC
35
DQ26
59
Vcc
-6
12
A0
36
DQ8
60
DQ32
13
A1
37
DQ17
61
DQ14
14
A2
38
DQ35
62
DQ33
15
A3
39
Vss
63
DQ15
16
A4
40
/CAS0
64
DQ34
17
A5
41
/CAS2
65
DQ16
18
A6
42
/CAS3
66
NC
A10
43
/CAS1
67
PD1
OPTIONS
MARKING
w Timing
50ns access
60ns access
w Packages
72-pin SIMM
M
PRESENCE DETECT PINS
Pin
50ns
60ns
PD1
NC
NC
19
PD2
Vss
Vss
20
DQ4
44
/RAS0
68
PD2
21
DQ22
45
/RAS1
69
PD3
22
DQ5
46
NC
70
PD4
23
DQ23
47
/WE
71
NC
24
DQ6
48
NC
72
Vss
PD3
Vss
PD4
Vss
Vss
NC
PERFORMANCE RANGE
Speed
tRAC
tCAC
tRC
5
50ns
13ns
90ns
6
60ns
15ns
110ns
URL:www.hbe.co.kr
REV.1.0 (August.2002)
-1-
HANBit Electronics Co.,Ltd.
HANBit
HMD8M36M6EG
FUNCTIONAL BLOCK DIAGRAM
DQ0-DQ7
U1
/RAS0
/RAS
/CAS0
/LCAS
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
/CAS1
/OE
/RAS
/CAS0
/CAS1
/CAS2
/CAS3
/W
A0-A11
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
/CAS0
/LCAS
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ0
DQ1
DQ2
DQ3
/CAS1
/UCAS
/OE
/W
DQ8,17,26,35
U2
/RAS1
/RAS
DQ9-DQ16
/UCAS
/W
U4
DQ0
DQ1
DQ2
DQ3
A0-A11
U5
/W
A0-A11
/RAS
/CAS0
/CAS1
/CAS2
/CAS3
A0-A11
DQ18-DQ25
U3
/RAS0
/CAS2
/CAS3
/RAS
/LCAS
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
/UCAS
/OE
/W
U6
DQ27-DQ34
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
A0-A11
/RAS
/RAS1
/LCAS
/CAS2
/UCAS
/CAS3
/OE
/W
A0-A11
/WE
A0-A11
Vcc
0.1uF
or
Capacitor
for each DRAM
Vss
URL:www.hbe.co.kr
REV.1.0 (August.2002)
-2-
0.22uF
To all DRAMs
HANBit Electronics Co.,Ltd.
HANBit
HMD8M36M6EG
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
VIN ,OUT
-1V to 7.0V
Voltage on Vcc Supply Relative to Vss
Vcc
-1V to 7.0V
Power Dissipation
PD
6W
TSTG
-55oC to 150oC
Voltage on Any Pin Relative to Vss
Storage Temperature
Short Circuit Output Current
IOS
50mA
w Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be
restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS
( Voltage reference to VSS, TA=0 to 70 o C )
PARAMETER
SYMBOL
MIN
TYP.
MAX
UNIT
Supply Voltage
Vcc
4.5
5.0
5.5
V
Ground
Vss
0
0
0
V
Input High Voltage
VIH
2.4
-
Vcc+1
V
Input Low Voltage
VIL
-1.0
-
0.8
V
DC AND OPERATING CHARACTERISTICS
SYMBOL
SPEED
MIN
MAX
UNITS
ICC1
-5
-
736
MA
-6
-
656
MA
ICC2
Don't care
-
32
MA
ICC3
-5
-
736
MA
-6
-
656
MA
-5
-
656
MA
-6
-
576
MA
ICC5
Don't care
-
16
MA
ICC6
-5
-
736
MA
-6
-
656
MA
Il(L)
-80
80
µA
IO(L)
-10
10
µA
VOH
2.4
-
V
VOL
-
0.4
V
ICC4
ICC1 : Operating Current * (/RAS , /CAS , Address cycling @t RC=min.)
ICC2 : Standby Current ( /RAS=/CAS=VIH )
ICC3 : /RAS Only Refresh Current * ( /CAS=V IH, /RAS, Address cycling @tRC=min )
URL:www.hbe.co.kr
REV.1.0 (August.2002)
-3-
HANBit Electronics Co.,Ltd.
HANBit
HMD8M36M6EG
ICC4 : EDO Mode Current * (/RAS=VIL, /CAS, Address cycling @tPC=min )
ICC5 : Standby Current (/RAS=/CAS=Vcc-0.2V )
ICC6 : /CAS-Before-/RAS Refresh Current * (/RAS and /CAS cycling @t RC=min )
IIL : Input Leakage Current (Any input 0V ≤ VIN ≤ 6.5V, all other pins not under test = 0V)
IOL : Output Leakage Current (Data out is disabled, 0V ≤ VOUT ≤ 5.5V
VOH : Output High Voltage Level (IOH= -5mA )
VOL : Output Low Voltage Level (IOL = 4.2mA )
* NOTE: ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the
output open. ICC is specified as an average current. In ICC1 and ICC3, address cad be changed maximum once
while /RAS=VIL. In ICC4, address can be changed maximum once within one page mode cycle.
CAPACITANCE
o
( TA=25 C, Vcc = 5V, f = 1Mz )
DESCRIPTION
SYMBOL
MIN
MAX
UNITS
Input Capacitance (A0-A11)
CIN1
-
110
pF
Input Capacitance (/WE)
C IN2
-
130
pF
Input Capacitance (/RAS0)
CIN3
-
40
pF
Input Capacitance (/CAS0-/CAS3)
CIN4
-
30
pF
Input/Output Capacitance (DQ)
CDQ
-
20
pF
AC CHARACTERISTICS
o
( 0 C ≤ TA ≤ 70oC , Vcc = 5V±10%, See notes 1,2.)
-5
STANDARD OPERATION
-6
SYMBOL
UNIT
MIN
MAX
MAX
Random read or write cycle time
tRC
Access time from /RAS
tRAC
50
60
ns
Access time from /CAS
tCAC
13
15
ns
Access time from column address
tAA
25
30
ns
/CAS to output in Low-Z
tCLZ
0
Output buffer turn-off delay
tOFF
0
13
0
15
ns
Transition time (rise and fall)
tT
3
50
3
50
ns
/RAS precharge time
tRP
30
/RAS pulse width
tRAS
50
/RAS hold time
tRSH
13
15
ns
/CAS hold time
tCSH
50
60
ns
/CAS pulse width
tCAS
13
10K
15
10K
ns
/RAS to /CAS delay time
tRCD
20
37
20
45
ns
/RAS to column address delay time
tRAD
15
25
15
30
ns
/CAS to /RAS precharge time
tCRP
5
5
ns
Row address set-up time
tASR
0
0
ns
Row address hold time
tRAH
10
10
ns
URL:www.hbe.co.kr
REV.1.0 (August.2002)
-4-
90
MIN
110
ns
0
ns
40
10K
60
ns
10K
ns
HANBit Electronics Co.,Ltd.
HANBit
HMD8M36M6EG
Column address set-up time
tASC
0
0
ns
Column address hold time
tCAH
10
10
ns
Column Address to /RAS lead time
tRAL
25
30
ns
Read command set-up time
tRCS
0
0
ns
Read command hold referenced to /CAS
tRCH
0
0
ns
Read command hold referenced to /RAS
tRRH
0
0
ns
Write command hold time
tWCH
10
10
ns
Write command pulse width
tWP
10
10
ns
Write command to /RAS lead time
tRWL
15
15
ns
Write command to /CAS lead time
tCWL
13
15
ns
Data-in set-up time
tDS
0
0
ns
Data-in hold time
tDH
10
15
ns
Data-in hold referenced to /RAS
tDHR
50
55
ns
Refresh period
tREF
Write command set-up time
tWCS
0
0
ns
/CAS setup time (C-B-R refresh)
tCSR
5
5
ns
/CAS hold time (C-B-R refresh)
tCHR
10
10
ns
/RAS precharge to /CAS hold time
tRPC
5
5
ns
Access time from /CAS precharge
tCPA
EDO mode cycle time
tPC
20
25
Ns
/CAS precharge time (Fast page)
tCP
10
10
ns
64
64
30
35
ns
Ns
NOTES
1.An initial pause of 200µs is required after power-up followed by any 8 /RAS-only or /CAS-before-/RAS refresh cycles
before proper device operation is achieved.
2.VIH (min) and VIL (max) are reference levels for measuring timing of input signals. Transition times are measured between
VIH(min) and VIL(max) and are assumed to be 5ns for all inputs.
3.Measured with a load equivalent to 1TTL loads and 100pF
4.Operation within the tRCD(max) limit insures that tRAC(max) can be met. tRCD(max) is specified as a reference point only. If tRCD
is greater than the specified tRCD(max) limit, then access time is controlled exclusively by t CAC.
5.Assumes that tRCD ≥ tRCD(max)
6. tAR, tWCR, tDHR are referenced to tRAD(max)
7.This parameter defines the time at which the output achieves the open circuit condition and is not referenced to V OH
or VOL.
8. tWCS, tRWD, tCWD and tAWD are non restrictive operating parameter.
They are included in the data sheet as electrical characteristic only. If t WCS ≥ tWCS(min) the cycle is an early write
cycle and the data out pin will remain high impedance for the duration of the cycle.
9. Either tRCH or tRRH must be satisfied for a read cycle.
10. These parameters are referenced to the /CAS leading edge in early write cycles and to the /W leading edge in readwrite cycles.
11. Operation within the tRAD(max) limit insures that tRAC(max) can be met. tRAD(max) is specified as a reference
point only. If tRAD is greater than the specified tRAD(max) limit. then access time is controlled by tAA.
URL:www.hbe.co.kr
REV.1.0 (August.2002)
-5-
HANBit Electronics Co.,Ltd.
HANBit
HMD8M36M6EG
PACKAGING INFORMATION
107.95 mm
101.19 mm
R3.18 ±0.51mm
R1.57 mm
3.38 mm
18.52
10.16 mm
6.35 mm
R1.57±10 mm
6.35 mm
2.03
6.35mm
95.25 mm
7.68mm
MAX
2.54 mm
0.25 mm MAX
MIN
Gold : 1.04±0.10 mm
1.29±0.08 mm
Solder:0.914±0.10mm
1.27
ORDERING INFORMATION
Part Number
Density
Org.
Package
Vcc
SPEED
HMD8M36M6EG-5
32MByte
8MX 36bit
72 Pin-SIMM
5.0V
50ns
HMD8M36M6EG-6
32MByte
8MX 36bit
72 Pin-SIMM
5.0V
60ns
URL:www.hbe.co.kr
REV.1.0 (August.2002)
-6-
HANBit Electronics Co.,Ltd.