HW HWL30NPA

HWL30NPA
L-Band
GaAs Power FET
Autumn 2002 V1
Features
•
Low Cost GaAs Power FETs
•
Class A or Class AB Operation
•
High Efficiency
•
3V to 6V Operation
1
Pin 1: Source
Pin 2: Gate
Pin 3: Drain
Description
2
1
3
The HWL30NPA is a Medium Power GaAs FET using
surface mount type plastic package for various L-band
applications.
It is suitable for various 900 MHz, 1900
MHz cellular/wireless applications.
Absolute Maximum Ratings
VDS
Drain to Source Voltage
+7V
VGS
Gate to Source Voltage
-5V
ID
Drain Current
IDSS
IG
Gate Current
3mA
TCH
Channel Temperature
150°C
TSTG
Storage Temperature
-65 to +150°C
Total Power Dissipation
2.8W
PT
*
*
PA Package (SOT-89)
Outline Dimensions
mounted on an infinite heat sink.
Electrical Specifications (TA=25°C) f = 1900 MHz for all RF Tests
Symbol
Parameters & Conditions
Units
Min.
Typ.
Max.
IDSS
Saturated Current at VDS=3V, VGS=0V
mA
500
600
900
VP
Pinch-off Voltage at VDS=3V, ID=30mA
V
-3.5
-2.0
-1.5
gm
Transconductance at VDS=3V, ID=300mA
mS
200
300
-
Rth
Thermal Resistance
°C/W
-
35
45
P1dB
Power Output at 1dB Compression Point
VDS=3V, ID=0.5IDSS
VDS=5V, ID=0.5IDSS
dBm
24.5
27.5
25.5
28.5
-
Gain at 1dB Compression Point
VDS=3V, ID=0.5IDSS
VDS=5V, ID=0.5IDSS
dB
9
10
10
11
-
Power-Added Efficiency (POUT = P1dB)
VDS=3V, ID=0.5IDSS
VDS=5V, ID=0.5IDSS
%
-
40
40
-
G1dB
PAE
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
HWL30NPA
L-Band
GaAs Power FET
Autumn 2002 V1
Typical Performance at 25°°C
Output Power & Efficiency vs Vds
@ f=0.9GHz,Ids=0.5IDSS
PAE (%)
60
Po (dBm)
35
30
55
25
50
20
45
15
40
10
1
2
3
4
Po
PAE
35
6 Vds (V)
5
Output Power & Efficiency vs Vds
@ f=1.9GHz,Ids=0.5IDSS
PAE (%)
60
Po (dBm)
35
30
55
25
50
20
45
15
40
10
1
2
3
4
5
Po
PAE
35
6 Vds (V)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
HWL30NPA
L-Band
GaAs Power FET
Autumn 2002 V1
Output Power & Efficiency & Gain vs Input Power
@ f=0.9GHz, Vds=3V
Po (dBm)
30
PAE (%)
60
25
50
20
40
15
30
10
Gain
5
20
Po
Gain
Eff
10
0
0
0
4
8
12
16
Pin (dBm)
Output Power & Efficiency & Gain vs Input Power
@ f=1.9GHz, Vds=3V
Po (dBm)
30
PAE (%)
60
25
50
20
40
15
30
10
20
5
10
0
0
Po
Gain
Eff
Gain
0
5
10
15
20
25
Pin (dBm)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
HWL30NPA
L-Band
GaAs Power FET
Autumn 2002 V1
Output Power & Efficiency & Gain vs Input Power
@ f=0.9GHz, Vds=5V, IDS=0.5IDSS
Po (dBm)
30
PAE (%)
70
60
25
50
20
Po
Gain
Eff
40
15
Gain
10
30
5
10
0
0
20
0
4
8
12
Pin (dBm)
16
Output Power & Efficiency & Gain vs Input Power
@ f=1.9GHz, Vds=5V, IDS=0.5IDSS
Po (dBm)
30
PAE (%)
70
60
25
50
20
Po
Gain
Eff
40
15
Gain
10
30
5
10
0
0
20
1
3
5
7
9
11
13
15
17
19
21
Pin (dBm)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
HWL30NPA
L-Band
GaAs Power FET
Autumn 2002 V1
Output Power & Efficiency & Gain vs Frequency
@ Vds=3V, Ids=300mA
Po (dBm)
PAE (%)
30
60
25
55
20
Po
Gain
PAE
50
15
45
10
Gain
5
40
0
35
0.7
0.8
0.9
1.0
1.1
f (GHz)
Output Power & Efficiency & Gain vs Frequency
@ Vds=5V, Ids=300mA
Po (dBm)
PAE (%)
30
60
25
50
20
40
15
30
10
Gain
5
20
Po
Gain
PAE
10
0
0
1.6
1.7
1.8
1.9
2.0
2.1
f (GHz)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
HWL30NPA
L-Band
GaAs Power FET
Autumn 2002 V1
Power Derating Curve
Total Power Dissipation,PT (W)
4
(25,2.8)
2
(150,0)
0
0
50
100
150
Case Temperature,TC (℃)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
HWL30NPA
L-Band
GaAs Power FET
Autumn 2002 V1
Small Signal Common Source Scattering Parameters
S-MAGN AND ANGLES
VDS=3V, IDS=0.5IDSS
(GHz)
lS11l
∠ANG
lS21l
∠ANG
lS12l
∠ANG
lS22l
∠ANG
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
0.823
0.815
0.808
0.805
0.799
0.801
0.797
0.798
0.801
0.795
0.799
0.794
0.801
0.795
0.792
0.793
0.790
0.791
0.787
0.789
0.785
0.781
0.790
0.785
-124.08
-132.50
-139.69
-145.83
-151.61
-156.12
-160.71
-164.76
-168.30
-171.96
-175.00
-177.52
179.69
177.19
175.03
172.48
170.02
168.28
166.13
164.32
161.82
160.26
157.97
156.36
6.597
5.940
5.432
4.975
4.589
4.265
3.973
3.711
3.500
3.277
3.124
2.952
2.838
2.685
2.576
2.475
2.383
2.297
2.216
2.161
2.080
2.014
1.982
1.934
106.16
100.82
96.62
92.04
87.95
84.98
81.12
78.13
75.17
71.97
69.30
66.88
64.24
61.61
59.56
57.27
54.65
52.68
50.29
48.22
45.62
43.73
41.42
39.43
0.038
0.039
0.044
0.045
0.048
0.049
0.051
0.053
0.056
0.058
0.060
0.062
0.065
0.067
0.070
0.072
0.074
0.078
0.079
0.084
0.087
0.089
0.092
0.096
47.22
45.96
46.57
44.56
44.03
44.90
43.79
42.66
42.80
42.28
42.45
42.19
42.39
42.03
41.59
40.83
40.43
40.49
40.14
39.04
37.82
35.77
36.24
35.76
0.312
0.328
0.332
0.338
0.337
0.347
0.346
0.351
0.358
0.359
0.360
0.359
0.367
0.366
0.367
0.364
0.365
0.365
0.362
0.368
0.365
0.368
0.373
0.368
-169.26
-171.51
-174.06
-175.87
-176.95
-178.61
179.70
179.33
177.29
175.88
175.12
175.17
174.20
173.35
172.36
172.87
171.46
171.47
170.35
170.59
168.67
168.15
167.53
167.48
S-MAGN AND ANGLES
VDS=5V, IDS=0.5IDSS
(GHz)
lS11l
∠ANG
lS21l
∠ANG
lS12l
∠ANG
lS22l
∠ANG
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
0.813
0.805
0.798
0.793
0.788
0.790
0.788
0.788
0.791
0.785
0.789
0.785
0.791
0.786
0.783
0.785
0.783
0.783
0.780
0.782
0.778
0.774
0.784
0.780
-123.01
-131.28
-138.59
-144.68
-150.52
-154.88
-159.51
-163.52
-167.06
-170.83
-173.75
-176.28
-179.01
178.30
176.23
173.68
171.30
169.60
167.40
165.67
163.14
161.58
159.37
157.92
7.231
6.524
5.973
5.464
5.022
4.667
4.351
4.064
3.833
3.602
3.415
3.224
3.089
2.924
2.797
2.686
2.584
2.489
2.391
2.328
2.245
2.174
2.131
2.078
105.37
99.90
95.56
90.88
86.66
83.43
79.39
76.38
73.20
69.90
66.98
64.49
61.64
58.97
56.71
54.27
51.51
49.42
46.84
44.64
41.93
39.88
37.44
35.38
0.034
0.035
0.037
0.040
0.042
0.043
0.044
0.046
0.048
0.049
0.051
0.052
0.055
0.058
0.059
0.061
0.063
0.065
0.067
0.071
0.073
0.075
0.077
0.080
46.83
45.34
43.94
42.73
42.30
43.74
41.95
42.40
42.93
43.39
42.59
42.94
43.14
42.04
42.29
42.34
42.05
41.48
41.31
41.28
41.12
38.67
39.47
39.14
0.170
0.183
0.186
0.193
0.199
0.205
0.205
0.217
0.222
0.224
0.230
0.237
0.247
0.251
0.254
0.259
0.263
0.269
0.269
0.281
0.279
0.286
0.294
0.295
-136.95
-141.01
-145.96
-147.75
-148.75
-151.81
-152.16
-153.57
-155.52
-155.74
-157.08
-156.84
-158.26
-159.44
-159.80
-158.82
-160.00
-159.37
-160.21
-160.04
-160.84
-161.38
-161.26
-160.85
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.