HW HWL27NPB

HWL27NPB
L-Band GaAs Power FET
Autumn 2002 V1
Features
Outline Dimensions
•
Plastic Packaged GaAs Power FET
•
Suitable for Commercial Wireless
Applications
•
High Efficiency
•
3V Operation
1
Pin 1: Source
Pin 2: Gate
Pin 3: Drain
2
3
Description
The HWL27NPB is a medium Power GaAs FET using
surface mount type plastic package for various L-Band
applications.
It is suitable for various 900 MHz, 1900
MHz cellular/wireless applications.
Absolute Maximum Ratings
VDS
Drain to Source Voltage
+7V
VGS
Gate to Source Voltage
-5V
ID
Drain Current
IDSS
IG
Gate Current
2mA
TCH
Channel Temperature
150°C
TSTG
Storage Temperature
-65 to +150°C
Power Dissipation
0.7W
PT
PB Package (SOT-23)
Electrical Specifications (TA=25°C) f=1900 MHz for all RF Tests
Symbol
Parameters & Conditions
Units
Min.
Typ.
Max.
IDSS
Saturated Current at VDS=3V, VGS=0V
mA
300
400
-
VP
Pinch-off Voltage at VDS=3V, ID=20mA
V
-3.5
-2.0
-1.5
gm
Transconductance at VDS=3V, ID=200mA
mS
-
220
-
Rth
Thermal Resistance
°C/W
-
45
-
P1dB
Power Output at Test Points
VDS=3V, ID=0.5IDSS
dBm
24.5
-
G1dB
PAE
22.5
Gain at 1dB Compression Point
VDS=3V, ID=0.5IDSS
dB
8.0
-
Power-Added Efficiency (POUT = P1dB)
VDS=3V, ID=0.5IDSS
%
40.0
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
HWL27NPB
L-Band GaAs Power FET
Autumn 2002 V1
Typical Performance at 25°°C
Output Power & Efficiency & Gain vs Input Power
@ f=0.9GHz, Vds=3V
Po (dBm)
25
PAE (%)
60
50
20
Po
40
Gain
Eff
15
30
10
Gain
20
5
10
0
0
-8
-4
0
4
8
Pin (dBm)
12
Output Power & Efficiency & Gain vs Input Power
@ f=1.9GHz, Vds=3V
Po (dBm)
30
PAE (%)
60
25
50
20
40
15
30
10
20
5
10
0
0
Gain
0
5
10
15
20
Po
Gain
Eff
Pin (dBm)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
HWL27NPB
L-Band GaAs Power FET
Autumn 2002 V1
Output Power & Efficiency & Gain vs Frequency
@ Vds=3V, Ids=200mA
Po (dBm)
PAE (%)
30
60
25
50
20
40
15
30
10
20
5
10
0
0
Gain
0.7
0.8
0.9
1.0
Po
Gain
PAE
1.1 f (GHz)
Total Power Dissipation,PT (W)
Power Derating Curve
1
(25,0.7)
(150,0)
0
0
50
100
150
225
Case Temperature,TC (℃)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
HWL27NPB
L-Band GaAs Power FET
Autumn 2002 V1
Small Signal Common Source Scattering Parameters
S-MAGN AND ANGLES
VDS=3V, IDS=0.5IDSS
(GHz)
lS11l
∠ANG
lS21l
∠ANG
lS12l
∠ANG
lS22l
∠ANG
0.5
0.782
-80.72
8.369
121.65
0.033
63.29
0.077
-158.85
0.6
0.743
-92.29
7.733
113.66
0.039
59.29
0.080
-157.76
0.7
0.741
-104.32
7.190
105.78
0.044
56.19
0.090
-166.06
0.8
0.704
-114.72
6.681
98.92
0.048
53.99
0.093
-167.17
0.9
0.692
-123.90
6.228
91.84
0.053
50.64
0.101
-168.56
1.0
0.690
-132.50
5.824
85.20
0.058
47.76
0.105
-173.75
1.1
0.668
-141.17
5.452
79.37
0.062
45.25
0.113
179.21
1.2
0.663
-148.35
5.108
73.58
0.066
43.04
0.115
177.13
1.3
0.655
-155.54
4.808
68.05
0.071
39.79
0.121
176.36
1.4
0.650
-161.95
4.560
62.71
0.075
37.29
0.112
167.41
1.5
0.642
-168.50
4.305
57.61
0.081
35.25
0.129
165.74
1.6
0.638
-174.31
4.093
52.44
0.084
32.74
0.120
160.75
1.7
0.632
179.77
3.894
47.53
0.089
29.69
0.130
160.23
1.8
0.630
174.55
3.723
42.88
0.093
26.86
0.120
153.45
1.9
0.632
169.05
3.555
38.20
0.098
24.77
0.137
145.65
2.0
0.626
163.68
3.404
33.61
0.103
21.74
0.142
148.58
2.1
0.624
159.10
3.260
28.94
0.107
19.28
0.138
139.67
2.2
0.615
153.93
3.127
24.65
0.111
16.85
0.150
139.18
2.3
0.621
149.48
3.015
20.37
0.116
14.41
0.150
135.43
2.4
0.617
144.89
2.909
16.20
0.121
11.64
0.153
138.27
2.5
0.619
140.97
2.810
12.19
0.126
8.30
0.154
130.48
2.6
0.611
136.20
2.716
8.04
0.131
6.34
0.159
131.47
2.7
0.608
132.33
2.633
3.90
0.136
3.09
0.155
126.60
2.8
0.604
128.49
2.558
-0.14
0.141
0.40
0.157
123.67
2.9
0.605
124.44
2.489
-4.19
0.146
-1.90
0.163
123.15
3.0
0.594
120.30
2.420
-8.26
0.152
-5.07
0.157
124.45
3.1
0.595
116.61
2.359
-12.37
0.156
-8.08
0.158
115.85
3.2
0.596
112.03
2.295
-16.34
0.160
-11.11
0.184
117.43
3.3
0.586
108.46
2.250
-20.12
0.165
-13.83
0.166
118.10
3.4
0.591
103.89
2.207
-24.16
0.170
-17.07
0.173
111.63
3.5
0.585
99.90
2.163
-28.20
0.175
-19.48
0.172
112.13
3.6
0.579
95.08
2.114
-32.27
0.180
-22.19
0.186
108.13
3.7
0.573
91.24
2.072
-36.20
0.187
-25.09
0.177
111.32
3.8
0.563
86.73
2.028
-40.20
0.191
-28.00
0.181
108.09
3.9
0.559
83.08
1.998
-44.27
0.197
-31.12
0.171
107.08
4.0
0.553
78.88
1.957
-48.11
0.203
-34.36
0.166
108.36
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.