ETC 2SA1659

Product Specification
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2SA1659 2SA1659A
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220F package
・Complement to type 2SC4370/4370A
・High transition frequency fT
APPLICATIONS
・High voltage applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2SA1659
VCBO
Collector-base voltage
-160
Open base
2SA1659A
VEBO
Emitter-base voltage
V
-180
2SA1659
Collector-emitter voltage
UNIT
-160
Open emitter
2SA1659A
VCEO
VALUE
V
-180
Open collector
-5
V
IC
Collector current
-1.5
A
IB
Base current
-0.15
A
PC
Collector dissipation
20
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
www.jmnic.com
2SA1659 2SA1659A
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SA1659
V(BR)CEO
Collector-emitter
breakdown voltage
TYP.
MAX
UNIT
-160
IC=10mA ; IB=0
2SA1659A
VCEsat
MIN
V
-180
Collector-emitter saturation voltage
IC=-0.5A;IB=-50mA
-1.5
V
VBE
Base-emitter on voltage
IC=-0.5A ; VCE=-5V
-1.0
V
ICBO
Collector cut-off current
VCB=-160V;IE=0
-1
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-1
μA
hFE
DC current gain
IC=-0.1A ; VCE=-5V
fT
Transition frequency
IC=-0.1A ; VCE=-10V
100
MHz
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
30
pF
hFE classifications
O
Y
70-140
120-240
JMnic
70
240
Product Specification
www.jmnic.com
2SA1659 2SA1659A
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
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