JMnic Product Specification 2SB1016 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High breakdown voltage ・Low collector saturation voltage ・Complement to type 2SD1407 APPLICATIONS ・Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector -emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -5 V -5 A -0.5 A 30 W IC Collector current IB Base current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SB1016 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-4A ;IB=-0.4A -2.0 V VBE Base-emitter voltage IC=-4A; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -1 mA hFE-1 DC current gain IC=-1A ; VCE=-5V 40 hFE-2 DC current gain IC=-4A ; VCE=-5V 20 Transition frequency IC=-1A; VCE=-5V Collector output capacitance f=1MHz ; VCB=-10V;IE=0 fT COB CONDITIONS hFE-1 Classifications R O Y 40-80 70-140 120-240 2 MIN TYP. MAX -100 UNIT V 240 5 MHz 270 pF JMnic Product Specification 2SB1016 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 JMnic Product Specification 2SB1016 Silicon PNP Power Transistors 4