ETC GS75232TS

GS75232
Multiple RS-232 Drivers & Receivers
Product Description
The GS75232 are monolithic device containing 3 independent drives and 5
receivers. These are designed to interface between date terminal equipment and
date communication equipment as designed by EIA-232-D.
Features
n
Meets standard EIA-232-D (Revision of RS-232-C)
n
Drivers
VCC+
VCC
- Current Limited Output : 10 mA Typical
RA1
RY1
- Power-off Output Impedance : 300 Ω Min
RA2
RY2
RA3
RY3
DY1
DA1
DY2
DA2
- Input Resistance : 3 kΩ to 7 kΩ
RA4
RY4
- Input Signal Range : ± 30 V
DY3
DA3
RA5
RY5
VCC -
GND
- Slew Rate Control by Load Capacitor
- Flexible Supply Voltage Range
- Input Compatible with Most TTL and DTL Circuits
n
Receivers
- Built-in Input Hysteresis (Double Threshold)
GS75232
Pin Description
Name
VCC+
DA1
DA2
DA3
VCC
RA1
RA2
RA3
RA4
RA5
Pin No
1
16
15
13
20
2
3
4
7
9
Function
Driver Section Supply +
Driver Input
Receiver Section Supply
Receiver Input
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Name
VCCDY1
DY2
DY3
GND
RY1
RY2
RY3
RY4
RY5
1
Pin No
10
5
6
8
11
19
18
17
14
12
Function
Driver Section Supply Driver Output
Ground
Receiver Output
GS75232
GS75232
Globaltech Semiconductor
Representative Schematic Diagram
VCC+
8K2
6K2
DA
VCC
70
300
9K
DY
5K
2K
DY
3K6
2K
DA
4K
10K
10K
7K
70
VCC-
Driver
Receiver
Ordering Information
Device
Package
GS75232S
SOIC-20
GS75232SS
SSOP-20
GS75232TS
TSSOP-20
“ F” means Lead Free part.
*Request for other voltages, please contact factory directly.
Absolute Maximum Ratings
Symbol
VCC+
VCCVCC
VI (Driver)
VI (Reciver)
VO (Driver)
PT
TSTG
Top
Parameter
Supply Voltage
Supply Voltage
Supply Voltage
Input Voltage
Input Voltage
Output Voltage
Continuous Power Dissipation (Below 25 o C)
Storage Temperature
Operating Temperature
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2
Rating
15
-15
10
-15 to +7
± 30
-15 to +15
1.0
-65 to +175
0 to +75
Unit
V
V
V
V
V
V
W
o
C
o
C
GS75232
GS75232
Globaltech Semiconductor
Electrical Characteristics
Supply Current (V CC = 5V, TA = 25 OC )
Symbol
ICC+
ICC-
ICC
Parameter
Supply Current
from VCC+
Supply Current
from VCC-
Supply Current
from VCC
Test Condition
VCC+ = 9 V
VIN = 1.9V
No Load
VIN = 0.8V
VCC+ = 12 V
VIN = 1.9V
No Load
VIN = 0.8V
VCC+ = 15 V
VIN = 1.9V
No Load
VIN = 0.8V
VCC- = -9 V
VIN = 1.9V
No Load
VIN = 0.8V
VCC- = -12 V
VIN = 1.9V
No Load
VIN = 0.8V
VCC- = -15 V
VIN = 1.9V
No Load
VIN = 0.8V
VCC = 5 V
Min
-
Max
15
4.5
19
5.5
25
9
-15
-3.2
-19
-3.2
-25
-3.2
Unit
mA
mA
mA
VIN = 5.0V
-
30
Test Conditions
Min
Max
Unit
1.75
2.25
V
0.75
1.25
V
2.6
5
2.6
5
Receiver Section
Symbol
VT+
VT-
VO H
Parameter
Positive-Going
Threshold Voltage
Negative-Going
Threshold Voltage
High Level Output
Voltage
VO L
Low Level Output Voltage
IIH
High-Level Input Current
IIL
Low-Level Input Current
IOS
Short-Circuit
Output Current
VI = 0.75V,
IO L =-0.5mA
Input Open,
IO L = -0.5 mA
VI = 3V, IO L = 10 mA
VI = 25V
VI = 3V
VI = -25V
VI = -3V
Receiver Switching Characteristic (V CC= 5V)
Symbol
Parameter
Test Conditions
Propagation Delay Time,
CL = 15 ρF
tPLH
Low-To-High-Level Output
RL = 3.9 kΩ
Propagation Delay Time,
CL = 15 ρF
tPHL
High -To- Low -Level Output RL = 390 kΩ
Transition Time,
CL = 15 ρF
tTLH
Low-To-High-Level Output
RL = 3.9 kΩ
Transition Time,
CL = 15 ρF
tTHL
High -To- Low -Level Output RL = 390 kΩ
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3
V
0.45
3.6
8.3
0.43
-3.6
-8.3
-0.43
-3
(tip)
V
mA
mA
mA
Min
Max
Unit
-
150
ns
-
50
ns
-
175
ns
-
20
ns
GS75232
GS75232
Globaltech Semiconductor
Driver Section
Symbol
VIH
VIL
VO H
VO L
IIH
IIL
IOS(H)
IOS(L)
RO
Parameter
High Level
Input Voltage
Low Level
Input Voltage
Test Conditions
VCC+ = 9 V
VCC- = -9 V
High Level
Output Voltage
VIL = 0.8V
RL = 3 kΩ
Low Level
Output Voltage
VIH = 1.9V
RL = 3 kΩ
High Level
Input Current
Low Level
Input Current
Short Circuit
Output Current
at High Level
Short Circuit
Output Current
at Low Level
Output Resistance,
Power Off
Min
Max
Unit
1.9
-
V
-
0.8
V
6
-
V
9
-
-
-6
-
-9
VI = 5V
-
10
µA
VI = 0
-
-1.6
mA
VI = 0.8V
VO = 0
-6
-12
mA
VI = 1.9V
VO = 0
6
12
mA
300
-
Ω
VCC+ = 9 V
VCC- = -9 V
VCC+ = 13.2 V
VCC- = -13.2 V
VCC+ = 9 V
VCC- = -9 V
VCC+ = 13.2 V
VCC- = -13.2 V
VCC+ = 0, VCC- = 0
VO = -2V to 2V
V
Driver Switching Characteristic (V CC+ = 9V, V CC- = -9V TA = 25 OC)
Symbol
tPLH
Parameter
Test Conditions
Min
Max
Unit
Propagation Delay Time,
ns
500
Low-To-High-Level Output
tPHL
Propagation Delay Time,
ns
175
High -To- Low -Level Output
RL = 3 kΩ
tTLH
Transition Time,
CL = 15 µF
100
ns
Low-To-High-Level Output
See Figure 1
*
tTHL
Transition Time,
75
ns
High -To- Low -Level
Output*
tTLH
Transition Time,
2.5
µs
Low-To-High-Level
(tip)
RL = 3 kΩ to 7 kΩ
Output**
CL = 2500 ρF
tTHL
Transition Time,
See Figure 1
3.0
µs
High-To-Low -Level
(tip)
Output**
*- Measured between 10 % and 90 % Points of Output Waveform
** - Measured between +3V and -3V Points on the Output Waveform (EIA-232-D
Condition)
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GS75232
GS75232
Globaltech Semiconductor
Receiver Section
Symbol
Parameter
Positive-Going
VT+
Threshold Voltage
Negative-Going
VTThreshold Voltage
Test Conditions
VO H
High Level Output
Voltage
VO L
Low Level Output Voltage
IIH
High-Level Input Current
IIL
Low-Level Input Current
IOS
Short-Circuit
Output Current
Receiver Switching Characteristic
Symbo
Parameter
l
Propagation Delay Time,
tPLH
Low-To-High-Level Output
Propagation Delay Time,
tPHL
High -To- Low -Level Output
Transition Time,
tTLH
Low-To-High-Level Output
Transition Time,
tTHL
High -To- Low -Level Output
VI = 0.75V,
IO L =-0.5mA
Input Open,
IO L = -0.5 mA
VI = 3V, IO L = 10 mA
VI = 25V
VI = 3V
VI = -25V
VI = -3V
(VCC = 5V)
Test Conditions
CL
RL
CL
RL
CL
RL
CL
RL
Min
Max
Unit
1.75
2.25
V
0.75
1.25
V
2.6
5
2.6
5
V
0.45
3.6
8.3
0.43
-3.6
-8.3
-0.43
-3
(tip)
mA
mA
mA
Min
Max
Unit
-
150
ns
-
50
ns
-
175
ns
-
20
ns
15 ρF
3.9 kΩ
15 ρF
390 kΩ
15 ρF
3.9 kΩ
15 ρF
390 kΩ
=
=
=
=
=
=
=
=
V
Typical Performance Characteristics
10ns
DRIVER
3V
1.5V
PULSE
GENERATOR
(See Note A)
OUTPUT
1.5V
INPUT
0V
tPLH
RL
CL
tPLH
OUTPUT
VOH
50%
50%
VOL
tTHL
tTLH
Voltage Waveform
10ns
RECEIVER
90%
90%
3V
OUTPUT
10%
RL
PULSE
GENERATOR
(See Note A)
50%
50%
10%
INPUT
tPLH
0V
tPLH
OUTPUT
VOH
1.5V
1.5V
VOL
CL
tTHL
tTLH
Tw=20us, Voltage Waveform
A. The pulse generator has the following characteristics. f = 200 KHz, ZO = 50 Ω
B. C included probe and jig capacitance.
C. All diodes are 1N3064 or equivalent.
Fig1. Propagation and Transition Times
Note
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GS75232
GS75232
Globaltech Semiconductor
Applications Information
+5V
+12V
UART
DCD
DSR
S IN
1
RTS
6
2
7
S OUT
3
8
4
CTS
9
5
DTR
RS-232
DB-9
Connector
RI
SIO Card
-12V
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6
GS75232
GS75232
Globaltech Semiconductor
Package Dimensions
SOIC-20L
D
θ1
θ2
E/2
E1/2
R1
R
+
E1
E
L
θ1
PIN 1
MARKING
e
b
L1
GAUGE
PLANE
θ
L2
h
c
A A2
A1
Dimensions
SYMBOL
A
A1
A2
b
b1
c
D
E
E1
e
L
L1
L2
R
R1
h
u
u1
u2
MIN
2.35
0.10
2.05
0.31
0.27
0.20
0.40
0.07
0.07
0.25
08
58
08
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Millimeters
TYP
12.80
10.30
7.50
1.27
1.40
0.25
-
7
MAX
2.65
0.30
2.55
0.51
0.48
0.33
1.27
0.75
88
158
-
GS75232
GS75232
Globaltech Semiconductor
SSOP-20L
D
E/2
R
E1/2
E1
GAUGE
PLANE
E
L
L1
PIN 1
MARKING
e
θ
b
c
A A2
A1
Dimensions
SYMBOL
A
A1
A2
b
c
D
E
E1
e
L
L1
L2
R
u
Millimeters
MIN
MAX
2.0
0.05
1.65
1.85
0.22
0.38
0.09
0.25
6.90
7.50
7.40
8.20
5.00
5.60
0.65 (TYP)
0.55
0.95
1.25 (TYP)
0.25 (TYP)
0.09
08
88
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Inches
MIN
MAX
.078
.002
.065
.073
.008
.015
.003
.010
.271
.295
.290
.323
.197
.220
.026 (TYP)
.021
.037
.050 (TYP)
.010 (TYP)
.003
08
88
8
GS75232
SEATING
PLANE
L2
GS75232
Globaltech Semiconductor
TSSOP-20L
20
e
11
E/2
θ2
E1
S
E
R
+
L
PIN 1
MARKING
1 2 3
θ3
10
e/2
GAUGE
PLANE
R1
L1
θ1
L2
b
D
c
A A2
A1
Dimensions
SYMBOL
A
A1
A2
b
b1
c
D
E
E1
e
L
L1
R
R1
S
u1
u2
u3
MIN
0.05
0.80
0.19
0.19
0.09
6.40
4.30
0.45
0.09
0.09
0.20
08
-
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Millimeters
TYP
1.00
0.22
6.50
6.40
4.40
0.65
0.60
1.00
128
128
9
MAX
1.20
0.15
1.05
0.30
0.25
0.20
6.60
4.50
0.75
88
-
GS75232
GS75232
Globaltech Semiconductor
Notice
Information furnished is believed to be accurate and reliable. However Globaltech
Semiconductor assumes no responsibility for the consequences of use of such
information nor for any infringement of patents or other rights of third parties,
which may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Globaltech Semiconductor. Specifications
mentioned in this publication are subject to change without notice. This publication
supersedes and replaces all information without express written approval of
Globaltech Semiconductor.
(Revise Date:2005/10/26 Version_A1)
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10
GS75232