GS75232 Multiple RS-232 Drivers & Receivers Product Description The GS75232 are monolithic device containing 3 independent drives and 5 receivers. These are designed to interface between date terminal equipment and date communication equipment as designed by EIA-232-D. Features n Meets standard EIA-232-D (Revision of RS-232-C) n Drivers VCC+ VCC - Current Limited Output : 10 mA Typical RA1 RY1 - Power-off Output Impedance : 300 Ω Min RA2 RY2 RA3 RY3 DY1 DA1 DY2 DA2 - Input Resistance : 3 kΩ to 7 kΩ RA4 RY4 - Input Signal Range : ± 30 V DY3 DA3 RA5 RY5 VCC - GND - Slew Rate Control by Load Capacitor - Flexible Supply Voltage Range - Input Compatible with Most TTL and DTL Circuits n Receivers - Built-in Input Hysteresis (Double Threshold) GS75232 Pin Description Name VCC+ DA1 DA2 DA3 VCC RA1 RA2 RA3 RA4 RA5 Pin No 1 16 15 13 20 2 3 4 7 9 Function Driver Section Supply + Driver Input Receiver Section Supply Receiver Input www.globaltechsemi.com Name VCCDY1 DY2 DY3 GND RY1 RY2 RY3 RY4 RY5 1 Pin No 10 5 6 8 11 19 18 17 14 12 Function Driver Section Supply Driver Output Ground Receiver Output GS75232 GS75232 Globaltech Semiconductor Representative Schematic Diagram VCC+ 8K2 6K2 DA VCC 70 300 9K DY 5K 2K DY 3K6 2K DA 4K 10K 10K 7K 70 VCC- Driver Receiver Ordering Information Device Package GS75232S SOIC-20 GS75232SS SSOP-20 GS75232TS TSSOP-20 “ F” means Lead Free part. *Request for other voltages, please contact factory directly. Absolute Maximum Ratings Symbol VCC+ VCCVCC VI (Driver) VI (Reciver) VO (Driver) PT TSTG Top Parameter Supply Voltage Supply Voltage Supply Voltage Input Voltage Input Voltage Output Voltage Continuous Power Dissipation (Below 25 o C) Storage Temperature Operating Temperature www.globaltechsemi.com 2 Rating 15 -15 10 -15 to +7 ± 30 -15 to +15 1.0 -65 to +175 0 to +75 Unit V V V V V V W o C o C GS75232 GS75232 Globaltech Semiconductor Electrical Characteristics Supply Current (V CC = 5V, TA = 25 OC ) Symbol ICC+ ICC- ICC Parameter Supply Current from VCC+ Supply Current from VCC- Supply Current from VCC Test Condition VCC+ = 9 V VIN = 1.9V No Load VIN = 0.8V VCC+ = 12 V VIN = 1.9V No Load VIN = 0.8V VCC+ = 15 V VIN = 1.9V No Load VIN = 0.8V VCC- = -9 V VIN = 1.9V No Load VIN = 0.8V VCC- = -12 V VIN = 1.9V No Load VIN = 0.8V VCC- = -15 V VIN = 1.9V No Load VIN = 0.8V VCC = 5 V Min - Max 15 4.5 19 5.5 25 9 -15 -3.2 -19 -3.2 -25 -3.2 Unit mA mA mA VIN = 5.0V - 30 Test Conditions Min Max Unit 1.75 2.25 V 0.75 1.25 V 2.6 5 2.6 5 Receiver Section Symbol VT+ VT- VO H Parameter Positive-Going Threshold Voltage Negative-Going Threshold Voltage High Level Output Voltage VO L Low Level Output Voltage IIH High-Level Input Current IIL Low-Level Input Current IOS Short-Circuit Output Current VI = 0.75V, IO L =-0.5mA Input Open, IO L = -0.5 mA VI = 3V, IO L = 10 mA VI = 25V VI = 3V VI = -25V VI = -3V Receiver Switching Characteristic (V CC= 5V) Symbol Parameter Test Conditions Propagation Delay Time, CL = 15 ρF tPLH Low-To-High-Level Output RL = 3.9 kΩ Propagation Delay Time, CL = 15 ρF tPHL High -To- Low -Level Output RL = 390 kΩ Transition Time, CL = 15 ρF tTLH Low-To-High-Level Output RL = 3.9 kΩ Transition Time, CL = 15 ρF tTHL High -To- Low -Level Output RL = 390 kΩ www.globaltechsemi.com 3 V 0.45 3.6 8.3 0.43 -3.6 -8.3 -0.43 -3 (tip) V mA mA mA Min Max Unit - 150 ns - 50 ns - 175 ns - 20 ns GS75232 GS75232 Globaltech Semiconductor Driver Section Symbol VIH VIL VO H VO L IIH IIL IOS(H) IOS(L) RO Parameter High Level Input Voltage Low Level Input Voltage Test Conditions VCC+ = 9 V VCC- = -9 V High Level Output Voltage VIL = 0.8V RL = 3 kΩ Low Level Output Voltage VIH = 1.9V RL = 3 kΩ High Level Input Current Low Level Input Current Short Circuit Output Current at High Level Short Circuit Output Current at Low Level Output Resistance, Power Off Min Max Unit 1.9 - V - 0.8 V 6 - V 9 - - -6 - -9 VI = 5V - 10 µA VI = 0 - -1.6 mA VI = 0.8V VO = 0 -6 -12 mA VI = 1.9V VO = 0 6 12 mA 300 - Ω VCC+ = 9 V VCC- = -9 V VCC+ = 13.2 V VCC- = -13.2 V VCC+ = 9 V VCC- = -9 V VCC+ = 13.2 V VCC- = -13.2 V VCC+ = 0, VCC- = 0 VO = -2V to 2V V Driver Switching Characteristic (V CC+ = 9V, V CC- = -9V TA = 25 OC) Symbol tPLH Parameter Test Conditions Min Max Unit Propagation Delay Time, ns 500 Low-To-High-Level Output tPHL Propagation Delay Time, ns 175 High -To- Low -Level Output RL = 3 kΩ tTLH Transition Time, CL = 15 µF 100 ns Low-To-High-Level Output See Figure 1 * tTHL Transition Time, 75 ns High -To- Low -Level Output* tTLH Transition Time, 2.5 µs Low-To-High-Level (tip) RL = 3 kΩ to 7 kΩ Output** CL = 2500 ρF tTHL Transition Time, See Figure 1 3.0 µs High-To-Low -Level (tip) Output** *- Measured between 10 % and 90 % Points of Output Waveform ** - Measured between +3V and -3V Points on the Output Waveform (EIA-232-D Condition) www.globaltechsemi.com 4 GS75232 GS75232 Globaltech Semiconductor Receiver Section Symbol Parameter Positive-Going VT+ Threshold Voltage Negative-Going VTThreshold Voltage Test Conditions VO H High Level Output Voltage VO L Low Level Output Voltage IIH High-Level Input Current IIL Low-Level Input Current IOS Short-Circuit Output Current Receiver Switching Characteristic Symbo Parameter l Propagation Delay Time, tPLH Low-To-High-Level Output Propagation Delay Time, tPHL High -To- Low -Level Output Transition Time, tTLH Low-To-High-Level Output Transition Time, tTHL High -To- Low -Level Output VI = 0.75V, IO L =-0.5mA Input Open, IO L = -0.5 mA VI = 3V, IO L = 10 mA VI = 25V VI = 3V VI = -25V VI = -3V (VCC = 5V) Test Conditions CL RL CL RL CL RL CL RL Min Max Unit 1.75 2.25 V 0.75 1.25 V 2.6 5 2.6 5 V 0.45 3.6 8.3 0.43 -3.6 -8.3 -0.43 -3 (tip) mA mA mA Min Max Unit - 150 ns - 50 ns - 175 ns - 20 ns 15 ρF 3.9 kΩ 15 ρF 390 kΩ 15 ρF 3.9 kΩ 15 ρF 390 kΩ = = = = = = = = V Typical Performance Characteristics 10ns DRIVER 3V 1.5V PULSE GENERATOR (See Note A) OUTPUT 1.5V INPUT 0V tPLH RL CL tPLH OUTPUT VOH 50% 50% VOL tTHL tTLH Voltage Waveform 10ns RECEIVER 90% 90% 3V OUTPUT 10% RL PULSE GENERATOR (See Note A) 50% 50% 10% INPUT tPLH 0V tPLH OUTPUT VOH 1.5V 1.5V VOL CL tTHL tTLH Tw=20us, Voltage Waveform A. The pulse generator has the following characteristics. f = 200 KHz, ZO = 50 Ω B. C included probe and jig capacitance. C. All diodes are 1N3064 or equivalent. Fig1. Propagation and Transition Times Note www.globaltechsemi.com 5 GS75232 GS75232 Globaltech Semiconductor Applications Information +5V +12V UART DCD DSR S IN 1 RTS 6 2 7 S OUT 3 8 4 CTS 9 5 DTR RS-232 DB-9 Connector RI SIO Card -12V www.globaltechsemi.com 6 GS75232 GS75232 Globaltech Semiconductor Package Dimensions SOIC-20L D θ1 θ2 E/2 E1/2 R1 R + E1 E L θ1 PIN 1 MARKING e b L1 GAUGE PLANE θ L2 h c A A2 A1 Dimensions SYMBOL A A1 A2 b b1 c D E E1 e L L1 L2 R R1 h u u1 u2 MIN 2.35 0.10 2.05 0.31 0.27 0.20 0.40 0.07 0.07 0.25 08 58 08 www.globaltechsemi.com Millimeters TYP 12.80 10.30 7.50 1.27 1.40 0.25 - 7 MAX 2.65 0.30 2.55 0.51 0.48 0.33 1.27 0.75 88 158 - GS75232 GS75232 Globaltech Semiconductor SSOP-20L D E/2 R E1/2 E1 GAUGE PLANE E L L1 PIN 1 MARKING e θ b c A A2 A1 Dimensions SYMBOL A A1 A2 b c D E E1 e L L1 L2 R u Millimeters MIN MAX 2.0 0.05 1.65 1.85 0.22 0.38 0.09 0.25 6.90 7.50 7.40 8.20 5.00 5.60 0.65 (TYP) 0.55 0.95 1.25 (TYP) 0.25 (TYP) 0.09 08 88 www.globaltechsemi.com Inches MIN MAX .078 .002 .065 .073 .008 .015 .003 .010 .271 .295 .290 .323 .197 .220 .026 (TYP) .021 .037 .050 (TYP) .010 (TYP) .003 08 88 8 GS75232 SEATING PLANE L2 GS75232 Globaltech Semiconductor TSSOP-20L 20 e 11 E/2 θ2 E1 S E R + L PIN 1 MARKING 1 2 3 θ3 10 e/2 GAUGE PLANE R1 L1 θ1 L2 b D c A A2 A1 Dimensions SYMBOL A A1 A2 b b1 c D E E1 e L L1 R R1 S u1 u2 u3 MIN 0.05 0.80 0.19 0.19 0.09 6.40 4.30 0.45 0.09 0.09 0.20 08 - www.globaltechsemi.com Millimeters TYP 1.00 0.22 6.50 6.40 4.40 0.65 0.60 1.00 128 128 9 MAX 1.20 0.15 1.05 0.30 0.25 0.20 6.60 4.50 0.75 88 - GS75232 GS75232 Globaltech Semiconductor Notice Information furnished is believed to be accurate and reliable. However Globaltech Semiconductor assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties, which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Globaltech Semiconductor. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information without express written approval of Globaltech Semiconductor. (Revise Date:2005/10/26 Version_A1) www.globaltechsemi.com 10 GS75232