一華半導體股份有限公司 SMOKE DETECTOR MOSDESIGN SEMICONDUCTOR CORP. PHOTOELECTRIC SMOKE DETECTOR WITH INTERCONNECT M75012 GENERAL DESCRIPTION The M75012 is a very low-power IC providing all of the required features for a photoelectric type smoke detector. This device can be used in conjunction with an infrared photoelectric chamber to sense scattered light from smoke particles. A variable-gain photo amplifier can be directly interfaced to an infrared emitter / detector pair. The amplifier gain levels are determined by two external capacitors that are then internally selected depending on the operating mode. Low gain is selected during standby and timer modes. During a local alarm this low gain is increased ( internally ) by ~ 10% to reduce false triggering. High gain is used during the push-button test and during standby to periodically monitor the chamber sensitivity. FEATURES ‧ Interconnect up to 50 detectors. ‧ Piezoelectric horn driver. ‧ Power-on reset. ‧ Built-in circuits to reduce false triggering. ‧ 6V to 12V operating voltage range. ‧ ESD-Protection circuitry on all pins. ‧ Temporal horn pattern. APPLICATIONS ‧ Smoke detector. PIN ASSIGNMENT M75012P C1 1 16 C2 TEST TRIP DETECT VSS STROBE OSCR VDD OSCC IRED LED FEEDBACK I/O HORN1 8 9 HORN2 1/10 2006-10-05 一華半導體股份有限公司 SMOKE DETECTOR MOSDESIGN SEMICONDUCTOR CORP. PHOTOELECTRIC SMOKE DETECTOR WITH INTERCONNECT M75012 ABSOLUTE MAXIMUM RATING Parameter Supply Voltage Range Input Voltage Range Input Current Operating Temperature Range Storage Temperature Range Sym. Rating Unit VDD VIN IIN TA TS -0.5 ~ 13 -0.3 to VDD + 0.3 10 -25 ~ 75 -55 to 125 V V mA ℃ ℃ PIN AND CIRCUIT DESCRIPTION Pin No Pin Name Description C1 A capacitor connected to this pin determines the gain of the photo amplifier during the push-to-test mode and during the chamber monitor test. A typical value for this high-gain mode is 0.047μF but should be selected based on the photo chamber background reflections reaching the detector and the desired level of sensitivity. Ae ≒ 1 + ( C1 / 10 ) where C1 is in pF. Ae should not exceed 10,000. 2 C2 A capacitor connected to this pin determines the gain of the photo amplifier during standby. A typical value for this low-gain mode is 4700 pF but should be selected based on a specific photo chamber and the desired level of sensitivity to smoke. Ae ≒ 1 + ( C2 / 10 ) where C2 is in pF. Ae should not exceed 10,000. 3 DETECT This is the input to the photo amplifier and is connected to the cathode of the photo diode. The photo diode is operated at zero bias and should have low darkleakage current and low capacitance. 4 STROBE This output provides a strobed , regulated voltage of VDD-5V. The minus side of all internal and external photo amplifier circuitry is referenced to this pin. 5 VDD This pin is connected to the most-positive supply potential and can range from 6V to 12V with respect to VSS. 6 IRED This output provides a pulsed base current for the external NPN transistor , which drives the IR emitter. Its beta should be greater than 100. The IRED output is not active , to minimize noise impact , when the horn and visible LED outputs are active. 1 A connection at this pin allows multiple smoke detectors to be interconnected. If a local smoke condition occurs , this pin is driven high. As an input , this pin is sampled nominally every 1.35 seconds during standby. Any local-alarm condition causes this pin to be ignored as an input. 7 I/O 8 HORN1 9 HORN2 10 An internal NMOS device acts as a charge dump to aid in applications involving a large ( distributed ) capacitance. The charge dump is activated at the end of local or test alarm. This pin also has an on-chip pull-down resistor and must be left unconnected if not used. In application , there is a series currentlimiting resistor to other smoke alarms. These three pins are used in conjunction with external passive components and a self-resonating piezoelectric transducer. HORN1 is connected to the piezo metal support electrode ; the complementary output , HORN2 , is connected to the ceramic electrode and the FEEDBACK input to the feedback electrode. A continuous modulated tone indicates either a local or remote alarm condition. A short ( 10ms ) chirp FEEDBACK indicates a low-battery chirp occurs almost simultaneous with the visible LED flash. If the FEEDBACK pin is not used , it must be connected to VDD or VSS. 2/10 2006-10-05 一華半導體股份有限公司 SMOKE DETECTOR MOSDESIGN SEMICONDUCTOR CORP. PHOTOELECTRIC SMOKE DETECTOR WITH INTERCONNECT M75012 This open-drain NMOS output is used to directly drive a visible LED. The low-battery test does not occur coincident with any other test or alarm signal. The LED also indicates detector status as follows (with component values as in the typical application , all times nominal)： 11 LED Standby ─ Pulses every 43 seconds. Local Smoke ─ Pulses every 0.67 seconds. Remote Alarm ─ No pulses. Test Mode ─ Pulses every 0.67 seconds. 12 OSCC A capacitor between this pin and VDD, along with a parallel resistor , forms part of a two-terminal oscillator and sets the internal clock low time. With component values as shown , this nominal time is 11 ms and essentially the oscillator period. 13 OSCR A resistor between this pin and OSCC (pin 12 ) is part of the two-terminal oscillator and sets the internal clock high time , which is also the IRED pulse width. With component values as shown , this nominal time is 105μs . 14 VSS This pin is connected to the most negative supply potential ( usually ground ). 15 TRIP This pin is connected to an external voltage which determines the low-supply alarm threshold. The trip voltage is obtained through a resistor divider connected between the VDD and LED pins. The low-supply alarm threshold voltage ( in volts ) ≒ ( 5R15/R14 ) + 5 where R15 and R14 are in the same units. TEST This pin has an internal pull-down device and is used to manually invoke a test mode. The Push-to-Test Mode is initiated by a high logic level on this pin ( usually the depression of a normally open push-button switch to VDD ). After one oscillator cycle, IRED pulse every 336 ms ( nominal ) and amplifier gain is increased by internal selection of C1. Background reflections in the smoke chamber can be used to simulate a smoke condition. After the third IRED pulse , a successful test ( three consecutive simulated smoke conditions ) activates the horn drivers and the I/O pin. When the push-button is released , the input returns to VSS due to the internal pull down. After one oscillator cycle , the amplifier gain returns to normal and after three additional IRED pulse ( less than one second ) , the device exits this mode and returns to standby. 16 3/10 2006-10-05 一華半導體股份有限公司 SMOKE DETECTOR MOSDESIGN SEMICONDUCTOR CORP. PHOTOELECTRIC SMOKE DETECTOR WITH INTERCONNECT M75012 LOCAL ALARM TIMING DIAGRAM ( NOT TO SCALE )： tw(ired) 90% tf(ired) 10% tired4 IRED (PIN 6) STROBE tired6 10% tired3 tst3 tst6 tst4 tw(st) (PIN 4) tw(led) tled6 tled1 LED (PIN 11) (NO PULSES) I/O (PIN 7) (AS OUTPUT) ton(horn) toff(horn) (AS INPUT) tr(io) (AS OUTPUT) ton (horn) toff(horn) HORN ENABLE NO SMOKE LOCAL SMOKE TEST REMOTE SMOKE ( NO LOCAL SMOKE ) (REMOTE SMOKE = DON’T CARE) 3 STROBE WITHOUT 3 STROBE WITH SMOKE 4/10 2006-10-05 一華半導體股份有限公司 SMOKE DETECTOR MOSDESIGN SEMICONDUCTOR CORP. PHOTOELECTRIC SMOKE DETECTOR WITH INTERCONNECT M75012 STANDBY TIMING DIAGRAM ( NOT TO SCALE )： OSCC (PIN 12) tOSC INTERNAL CLOCK tired IRED (PIN 6) tW(ired) STROBE (PIN4) tw(st) tst tled LED (PIN 11) tW(led) SAMPLE SMOKE thorn WARNING CHIRP HORN ENABLE tw(horn) NO LOW SUPPLY LOW SUPPLY OR CHAMBER SENSITIVITY NORMAL DEGRADED SENSITIVITY WARNNING CHIRPS ARE OFFSET 5/10 2006-10-05 一華半導體股份有限公司 SMOKE DETECTOR MOSDESIGN SEMICONDUCTOR CORP. PHOTOELECTRIC SMOKE DETECTOR WITH INTERCONNECT M75012 FUNCTIONAL BLOCK DIAGRAM I/O 7 VDD BAND-GAP VDD 5 TRIP 15 10 FEEDBACK REFERENCE + - 9 HORN 2 8 HORN 1 11 LED LOW BATTERY LOGIC PHOTO AMP DETECT 3 + - C1 1 C2 2 STROBE 4 POWER-ON RESET 13 OSCR OSCILLATOR & TIMING VDD IRED 6 VSS 14 12 OSCC 16 TEST 6/10 2006-10-05 一華半導體股份有限公司 SMOKE DETECTOR MOSDESIGN SEMICONDUCTOR CORP. PHOTOELECTRIC SMOKE DETECTOR WITH INTERCONNECT DC ELECTRICAL CHARACTERISTICS M75012 (TA=-25℃ ~ 75℃) 7 10 16 15 7 10 16 15 12 15 12 15 16 16 7 7 11 8, 9 13 VDD — 12 12 12 9 9 9 9 9 9 9 9 12 12 12 12 12 9 9 12 6.5 6.5 6.5 Min. 6.0 — — — — — — — 3.2 6.3 8.5 1.6 — — — — — 0.25 20 — — — — Typ. — — — — — — — — — — — — — — — — — — — — — — 0.5 Max. 12 12 2.0 3.0 1.5 2.7 7.0 0.5 — — — — 100 100 -100 -100 -1.0 10 80 140 0.6 1.0 — Unit V μA mA mA V V V V V V V V nA nA nA nA μA μA μA μA V V V VOH 8, 9 6.5 5.5 — — V IO = -16mA Strobe Output Voltage VST 4 12 VDD-0.1 — — V Inactive , IO = -1μA Line Regulation ΔVST(ΔVDD) IRED Output Voltage VIRED 9 — 12 9 — 9 12 12 — — — VDD-5.6 — — 2.25 — -4.0 — — 6.5 VDD-4 VDD-3.92 — -60 — 3.0 -35 — — — 7.2 — — VDD-4.4 — 0.1 3.75 — — 1.0 -1.0 7.8 VDD-2 VDD-3.08 V dB V V dB mA μA μA V V V Characteristics Supply Voltage Operating Supply Current Low-Level Input Voltage High-Level Input Voltage Sym. VDD IDD VIL VIH Input Leakage High IIH Input Leakage Low IIL Input Pull-Down Current Low-Level Output Voltage High-Level Output Voltage Pin IIN VOL 6 ΔVIRED(ΔVDD) Line Regulation High-Level Output Voltage IOH 7 OFF Leakage Current High IOZ 11 OFF Leakage Current Low IOZ 11 Low VDD Alarm Threshold VDD ( th ) 1, 2, 3 Common Mode Voltage VIC Smoke Comparator Ref. Volt. VREF Int. Conditions Average Standby During Strobe ON , IRED OFF During Strobe ON , IRED ON VIN=VDD , Strobe Active ,Pin12 @VDD VIN=VDD VIN=VST , Strobe Active ,Pin12 @VDD VIN=VSS VIN=VDD ( @ VDD =9V) No Local Smoke ,VIN= VDD ( @VDD=9V) No Local Smoke ,VIN=17V( @VDD=12V) IO = 10mA IO = 16mA IO = 5mA Active , IO = 100μA to 500μA Active , VDD= 6V to 12V Inactive , IO =1Μa , TA = +25℃ Active , IO = -6mA , TA = +25℃ Active , VDD= 6V to 12V VDD= Alarm , I/O active , VO= VDD-2V VO= VDD VO= VSS Any Alarm Condition Any Alarm Condition * Limits over the operating temperature range are based on characterization data. Characteristics are production tested at +25℃. Typical values are at +25℃and are given for circuit design information only. 7/10 2006-10-05 一華半導體股份有限公司 SMOKE DETECTOR MOSDESIGN SEMICONDUCTOR CORP. PHOTOELECTRIC SMOKE DETECTOR WITH INTERCONNECT M75012 AC ELECTRICAL CHARACTERISTICS Characteristics Oscillator Period Led Pulse Period Led Pulse Width Strobe Pulse Period Strobe Pulse Width IRED Pulse Period IRED Pulse Width IRED Rise Time IRED Fall Time (TA=-25℃ ~ 75℃) VDD 9 9 9 9 9 9 9 Min. 9.4 39 None 0.45 9.5 9.6 1.8 Typ. 10.5 — — 0.50 — — 2.0 Max. 11.5 48 — 0.55 11.5 11.9 2.2 Unit ms s s s ms s s TST3 9 0.8 1.0 1.1 s After 2 or 3 Valid Samples and During Local Alarm TST4 9 7.2 8.0 8.9 s Remote Alarm TST5 9 38.9 — 47.1 s Chamber Test or Low Supply Test , No Local Alarm TST6 TW (ST) TIRED1 TIRED2 9 9 9 9 300 9.5 9.6 1.8 336 — — 2.0 370 11.5 11.9 2.2 ms ms s s TIRED3 9 0.8 1.0 1.1 s TIRED4 TIRED5 TIRED6 TW (IRED) 9 9 9 9 7.2 38.9 300 94 — — 8.0 — 336 — — — 8.9 47.1 370 116 30 200 — s s ms μs μs μs Sym. TOSC TLED1 TLED2 TLED3 TW (LED) TST1 TST2 Tr(IRED) Tf (IRED) Conditions No Local or Remote Smoke Remote Smoke only Local Smoke or Test No Local or Remote Smoke After 1 or 3 Valid Samples Pushbutton Test , No Alarm No Local or Remote Smoke After 1 or 3 Valid Samples After 2 or 3 Valid Samples and During Local Alarm Remote Alarm Chamber Test , No Local Alarm Pushbutton Test , No Alarm 10% to 90% 90% to 10% Td (IO) 9 — 0 I/O Charge Dump Duration Tdump 9 0.9 1.0 1.1 s End of Local Alarm or Test Rising Edge on I/O to Alarm 9 — — 1.34 s No Local Alarm Horn Warning Pulse Period THORN 9 38.9 — 47.1 s Low Supply and Degraded Chamber Sensitivity Horn Warning Pulse Width TW (HORN) 9 9.5 — 11.5 ms Low Supply and Degraded Chamber Sensitivity Horn ON Time 9 9 9 450 450 1350 500 500 1500 550 550 1650 ms ms ms Local or Remote Alarm Local or Remote Alarm Local or Remote Alarm I/O to Active Delay Horn OFF Time Tr (IO) TON (HORN) TOFF1 (HORN) TOFF2 (HORN) s Local Alarm * Limits over the operating temperature range are based on characterization data. Characteristics are production tested at +25℃. Typical values are at +25℃and are given for circuit design information only. 8/10 2006-10-05 一華半導體股份有限公司 SMOKE DETECTOR MOSDESIGN SEMICONDUCTOR CORP. PHOTOELECTRIC SMOKE DETECTOR WITH INTERCONNECT M75012 APPLICATION DIAGRAM ( 一 ) STAND-ALONE： VDD C4 D1 M75012P R1 9V C1 C1 R2 C2 R5 R14 R9 R15 TEST 1 16 TRIP C2 DETECT R3 PUSH TO TEST VSS R6 OSCR R10 C5 STROBE OSCC R8 VDD LED R4 IRED FEEDBACK C3 I/O R7 C6 8 9 HORN1 TO/FROM OTHER UNITS R11 HORN2 R12 R13 C1 C2 C3 C4 C5 C6 0.047μF 4700pF 100μF 22μF 1500pF 1000pF R1 R2 R3 R4 R5 R6 R7 R8 R9 R10 R11 R12 R13 R14 R15 5.6KΩ 5KΩ 8.2KΩ 1KΩ 560Ω 200KΩ 4.7Ω~22Ω 330Ω 7.5MΩ 100KΩ 200KΩ 2MΩ 220Ω 100KΩ 47KΩ 1. Value for R11、R12 and C6 may differ depending on type of piezoelectric horn used. 2. C2 and R7 are used for coarse sensitivity adjustment. Typical values are shown. 3. C4 should be 22μF if B1 is a carbon battery. C4 could be reduced to 1μF when an alkaline battery is used. 9/10 2006-10-05 一華半導體股份有限公司 SMOKE DETECTOR MOSDESIGN SEMICONDUCTOR CORP. PHOTOELECTRIC SMOKE DETECTOR WITH INTERCONNECT M75012 ( 二 ) NETWORK： VDD C4 D1 M75012P R1 9V C1 TEST C1 R2 C2 R5 1 16 TRIP C2 DETECT R3 VSS R6 R9 C5 STROBE OSCR VDD OSCC R8 LED R4 IRED C3 FEEDBACK I/O R7 HORN1 8 9 HORN2 R10 TO/FROM OTHER UNITS C1 C2 C3 C4 C5 0.047μF 4700pF 100μF 22μF 1500pF R1 R2 R3 R4 R5 R6 R7 R8 R9 R10 5.6KΩ 5KΩ 8.2KΩ 1KΩ 560Ω 200KΩ 4.7Ω~22Ω 7.5MΩ 100KΩ 220Ω 1. C2 and R7 are used for coarse sensitivity adjustment. Typical values are shown. 2. C4 should be 22μF if B1 is a carbon battery. C4 could be reduced to 1μF when an alkaline battery is used. 3. FEEDBACK ( PIN10)、TRIP ( PIN15 ) and TEST ( PIN16 ) must connect to ground. * All specs and applications shown above subject to change without prior notice. (以上電路及規格僅供參考,本公司得逕行修正) 10/10 2006-10-05