LTO-DMS Semiconductor Corporation LTO-DMS 1468, 86th Street, Brooklyn New York, 11228, USA Tel: (718) 234 6010 / (707) 3223 4679 MBR4040 thru MBR4060 Fax:(718) 234 6013 / (707) 3223 6696 40 Amp HT Power Schottky Barrier Rectifier 40 Volts to 60 Volts Features * High Junction Temperature Capability * Low Leakage Current and Low Forward Voltage Drop * Low Power Loss and High Efficiency Maximum Ratings TO-3P * Operating Junction Temperature: 150°C * Storage Temperature: - 55 °C to +175°C * Per diode Thermal Resistance 2.2°C/W Junction to Case Min.. Mechanical Data A B C D E F G H J K L M N P Q R * Case: Molded Plastic * Terminals: Plated Lead Solderable per MIL-STD-202, Method 208 * Marking:Type Number * Weight: 6 grams (approx) Symbol Millimeter Characteristics Inches Dim 4.70 2.79 1.50 1.00 2.00 3.00 0.400 21.8 15.9 5.45 20.2 4.00 3.00 6.80 4.44 1.72 Max Min. Max. 5.30 3.18 2.50 1.40 2.40 3.40 0.800 22.4 16.5 ---20.6 4.60 3.40 7.62 5.30 2.03 0.185 0.110 0.059 0.040 0.079 0.118 0.016 0.860 0.627 0.215 0.795 0.157 0.118 0.268 0.175 0.068 0.209 0.125 0.098 0.055 0.094 0.133 0.031 0.883 0.650 ---0.810 0.180 0.133 0.300 0.210 0.080 MBR4040 MBR4045 MBR4060 Unit VRRM Maximum Recurrent Peak Reverse Voltage 40 45 60 V VRM Maximum DC Blocking Voltage 40 45 60 V Maximum RMS Voltage 28 31.5 42 V 0.80 V VR(RMS) VF IF(AV) IFSM dv/dt IR RthJC Maximum Forward Voltage Drop Per Element IF=40A @TJ=25°C 0.70 Average Forward Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load Voltage Rate Of Change (Rated VR) 40 A 300 A 10000 V/us Maximum DC Reverse Current TJ=25°C 0.2 At Rated DC Blocking Voltage TJ=125°C 40 Typical Thermal Resistance (Note 2) mA 2.0 °C/ W 400 pF CJ Typical Junction Capacitance (Note 3) TJ Operating Temperature Range -55to+150 °C Storage Temperature Range -55to+175 °C TSTG NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. Revision: 1 2002/06/17