Agilent HCPL-817 Phototransistor Optocoupler High Density Mounting Type Data Sheet Description The HCPL-817 contains a light emitting diode optically coupled to a phototransistor. It is packaged in a 4-pin DIP package and available in wide-lead spacing option and lead bend SMD option. Input-output isolation voltage is 5000 Vrms. Response time, tr, is typically 4 µs and minimum CTR is 50% at input current of 5 mA. Functional Diagram PIN NO. AND INTERNAL CONNECTION DIAGRAM 4 Ordering Information Specify part number followed by Option Number (if desired). HCPL-817-XXX Option Number 060 W00 300 500 = = = = 00A 00B 00C 00D 00L = = = = = VDE0884 Option 0.4" Lead Spacing Option Lead Bend SMD Option Tape and Reel Packaging Option Rank Mark A Rank Mark B Rank Mark C Rank Mark D Rank Mark L 3 Schematic ANODE 1 IF IC 4 + Features • Current Transfer Ratio (CTR: min. 50% at IF = 5 mA, VCE = 5 V) • High input-output isolation voltage (Viso = 5000 Vrms) • Response time (tr: typ., 4 µs at VCE = 2 V, IC = 2 mA, RL = 100 Ω) • Compact dual-in-line package • UL approved • CSA approved • VDE approved • Options available: – Leads with 0.4" (10.16 mm) spacing (W00) – Leads bends for surface mounting (300) – Tape and reel for SMD (500) – VDE 0884 approvals (060) Applications • Signal transmission between circuits of different potentials and impedances • I/O interfaces for computers • Feedback circuit in power supply COLLECTOR VF 1 2 CATHODE 1. ANODE 2. CATHODE 3. EMITTER 4. COLLECTOR – 2 3 EMITTER CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by ESD. Package Outline Drawings 4.6 ± 0.5 (0.181) 4 3 TYPE NUMBER DATE CODE A 817 V YWW OPTION CODE FOR OPTION 060 ONLY 3.5 ± 0.5 (0.138) 6.5 ± 0.5 (0.256) PIN ONE DOT RANK MARK 1 7.62 ± 0.3 (0.3) 3.3 ± 0.5 (0.130) 2.8 ± 0.5 (0.110) 0.5 TYP. (0.02) 2 0.5 ± 0.1 (0.02) 0.35 +0.15/-0.10 (0.014) DIMENSIONS IN MILLIMETERS AND (INCHES) 7.62 ~ 9.98 2.54 ± 0.25 (0.1) Package Outline – Option W00 4.6 ± 0.5 (0.181) 7.62 ± 0.3 (0.3) 3.5 ± 0.5 (0.138) 6.5 ± 0.5 (0.256) 6.9 ± 0.5 (0.272) 2.3 ± 0.5 (0.09) 2.8 ± 0.5 (0.110) 0.5 ± 0.1 (0.02) 0.35 +0.15/-0.10 (0.014) 10.16 ± 0.5 (0.4) 2.54 ± 0.25 (0.1) DIMENSIONS IN MILLIMETERS AND (INCHES) Package Outline – Option 300 4.6 ± 0.5 (0.181) 7.62 ± 0.3 (0.3) 3.5 ± 0.5 (0.138) 0.35 ± 0.25 (0.014) 6.5 ± 0.5 (0.256) 1.2 ± 0.1 (0.047) 0.35 ± 0.25 (0.014) 2.54 ± 0.25 (0.1) DIMENSIONS IN MILLIMETERS AND (INCHES) 2 1.0 ± 0.25 (0.039) 10.16 ± 0.3 (0.4) Absolute Maximum Ratings (TA = 25˚C) Storage Temperature, TS Operating Temperature, T A Lead Solder Temperature, max. (1.6 mm below seating plane) Average Forward Current, IF Reverse Input Voltage, VR Input Power Dissipation, PI Collector Current, IC Collector-Emitter Voltage, V CEO Emitter-Collector Voltage, V ECO Collector Power Dissipation Total Power Dissipation Isolation Voltage, Viso (AC for 1 minute, R.H. = 40 ~ 60%) –55˚C to +125˚C –30˚C to +100˚C 260˚C for 10 s 50 mA 6V 70 mW 50 mA 35 V 6V 150 mW 200 mW 5000 Vrms Electrical Specifications (TA = 25˚C) Parameter Forward Voltage Reverse Current Terminal Capacitance Collector Dark Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector Current *Current Transfer Ratio Collector-Emitter Saturation Voltage Response Time (Rise) Response Time (Fall) Cut-off Frequency Symbol VF IR Ct ICEO BVCEO BVECO IC CTR VCE(sat) tr tf fc Min. – – – – 35 6 2.5 50 – – – – Typ. 1.2 – 30 – – – – – 0.1 4 3 80 Max. 1.4 10 250 100 – – 30 600 0.2 18 18 – Units V µA pF nA V V mA % V µs µs KHz Isolation Resistance Riso 5 x 1010 1 x 1011 – Ω Floating Capacitance Cf – 0.6 1.0 pF * CTR = IC x 100% IF Rank Mark L A B C D 3 CTR (%) 50 ~ 100 80 ~ 160 130 ~ 260 200 ~ 400 300 ~ 600 Conditions IF = 5 mA, VCE = 5 V, TA = 25°C Test Conditions IF = 20 mA VR = 4 V V = 0, f = 1 KHz VCE = 20 V IC = 0.1 mA IE = 10 µA IF = 5 mA, VCE = 5 V, RBE = ∞ IF = 20 mA, IC = 1 mA VCC = 2 V, IC = 2 mA RL = 100 Ω VCC = 5 V, IC = 2 mA RL = 100 Ω, –3 dB DC 500 V 40 ~ 60% R.H. V = 0, f = 1 MHz 20 10 0 25 50 75 100 125 TA – AMBIENT TEMPERATURE – °C Figure 1. Forward current vs. temperature. IF – FORWARD CURRENT – mA 500 TA = 75°C 200 TA = 50°C TA = 0°C 100 TA = 25°C TA = -25°C 50 20 10 5 2 1 0.5 0 1.5 1.0 2.0 2.5 3.0 150 100 50 50 75 100 50 0 -30 0 25 50 75 100 Figure 7. Relative current transfer ratio vs. temperature. IC = 6 mA IC = 7 mA 2 1 2 0 6 8 10 12 14 16 18 20 50 VCE = 5 V TA = 25°C 180 160 140 120 100 80 60 40 20 0 4 Figure 3. Collector-emitter saturation voltage vs. forward current. 5 2 20 10 50 0.12 0.10 0.08 0.06 0.04 0.02 0 25 50 75 100 TA – AMBIENT TEMPERATURE – °C Figure 8. Collector-emitter saturation voltage vs. temperature. PC (MAX.) 30 IF = 20 mA IF = 10 mA 20 IF = 10 mA 10 IF = 5 mA 1 0 2 3 4 5 6 7 8 9 Figure 6. Collector current vs. collectoremitter voltage. IF = 20 mA IC = 1 mA 0 -25 IF = 20 mA VCE – COLLECTOR-EMITTER VOLTAGE – V Figure 5. Current transfer ratio vs. forward current. 0.14 TA = 25°C IF = 30 mA 40 0 1 0.16 100 IC = 3 mA 3 IF – FORWARD CURRENT – mA 200 150 IF = 5 mA VCE = 5 V IC = 1 mA 4 125 Figure 2. Collector power dissipation vs. temperature. VCE(SAT.) – COLLECTOR-EMITTER SATURATION VOLTAGE – V RELATIVE CURRENT TRANSFER RATIO – % 25 IF – FORWARD CURRENT – mA TA – AMBIENT TEMPERATURE – °C 4 0 IC = 0.5 mA TA – AMBIENT TEMPERATURE – °C VF – FORWARD VOLTAGE – V Figure 4. Forward current vs. forward voltage. 5 0 0 -30 ICEO – COLLECTOR DARK CURRENT – A 0 -30 TA = 25°C VCE(SAT.) – COLLECTOR-EMITTER SATURATION VOLTAGE – V 30 6 200 IC – COLLECTOR CURRENT – mA 40 PC – COLLECTOR POWER DISSIPATION – mW 50 CTR – CURRENT TRANSFER RATIO – % IF – FORWARD CURRENT – mA 60 10-5 VCE = 20 V 10-6 10-7 10-8 10-9 10-10 10-11 -25 0 25 50 75 100 TA – AMBIENT TEMPERATURE – °C Figure 9. Collector dark current vs. temperature. 200 100 VCE = 2 V IC = 2 mA TA = 25°C 50 VOLTAGE GAIN AV – dB RESPONSE TIME – µs 500 tr 20 10 tf 5 td 2 1 ts 0.5 0.2 0.1 VCE = 2 V IC = 2 mA TA = 25°C 0 10 RL = 10 kΩ RL = 1 kΩ RL = 100 Ω 20 0.05 0.1 0.2 1 0.5 2 5 10 RL – LOAD RESISTANCE – kΩ Figure 10. Response time vs. load resistance. Test Circuit for Response Time 0.5 1 2 5 10 20 50 100 200 500 f – FREQUENCY – kHz Figure 11. Frequency response. Test Circuit for Frequency Response VCC VCC RL RD RD INPUT OUTPUT OUTPUT ~ INPUT 10% OUTPUT 90% ts td tr 5 tf RL www.semiconductor.agilent.com Data subject to change. Copyright © 2001 Agilent Technologies, Inc. October 19, 2001 5988-4116EN