ETC OD-880L

HIGH-POWER GaAlAs IR EMITTERS
FEATURES
1.00
MIN.
GLASS
DOME
OD-880L
ANODE
(CASE)
.015
• High reliability liquid-phase epitaxially grown GaAlAs
.209
.220
• 880nm peak emission for optimum matching with
ODD-45W photodiode
• Wide range of linear power output
.183 .152
.186 .156
• Hermetically sealed TO-46 package
.100
.041
.017
.024
.043
.143
.150
CATHODE
• Medium emission angle for best coverage/power
density
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Window
caps are welded to the case.
.036
45°
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, Po
Radiant Intensity, Ie
Peak Emission Wavelength, λP
Spectral Bandwidth at 50%, ∆λ
Half Intensity Beam Angle, θ
Forward Voltage, VF
Reverse Breakdown Voltage, VR
TEST CONDITIONS
IF = 100mA
MIN
TYP
18
20
mW
50
mW/sr
880
nm
80
nm
IF = 50mA
35
IF = 100mA
IR = 10µA
MAX
1.55
Deg
1.9
Volts
30
Volts
17
pF
Rise Time
0.5
µsec
Fall Time
0.5
µsec
Capacitance, C
VR = 0V
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UNITS
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation1
190mW
Continuous Forward Current
100mA
Peak Forward Current (10µs, 400Hz)2
3A
Reverse Voltage
5V
Lead Soldering Temperature (1/16" from case for 10sec)
240°C
1Derate per Thermal Derating Curve above 25°C
2Derate linearly above 25°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
-55°C TO 100°C
Maximum Junction Temperature
Thermal Resistance, RTHJA1
Thermal Resistance, RTHJA2
100°C
400°C/W Typical
135°C/W Typical
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25°C
OPTO DIODE CORP.
4
750 Mitchell Road, Newbury Park, California 91320
Phone (805) 499-0335 FAX (805) 499-8108
HIGH-POWER GaAlAs IR EMITTERS
200
OD-880L
THERMAL DERATING CURVE
10
PEAK FORWARD CURRENT, Ip (amps)
POWER DISSIPATION (mW)
MAXIMUM RATINGS
180
INFINITE
HEAT SINK
160
140
NO
HEAT SINK
120
100
80
60
40
20
50
75
AMBIENT TEMPERATURE (°C)
t = 10µs
100
t = 500µs
Ip
T
RELATIVE POWER OUTPUT (%)
RELATIVE POWER OUTPUT (%)
70
TCASE = 25° C
NO PRE BURN-IN PERFORMED
IF = 100mA
1
DUTY CYCLE, D (%)
10
100
104
80
60
40
20
0
–50
50
105
FORWARD I-V CHARACTERISTICS
–40
–30
–20
–10
0
10
20
BEAM ANGLE, θ(deg)
30
40
50
POWER OUTPUT vs TEMPERATURE
1.5
4
RELATIVE POWER OUTPUT
FORWARD CURRENT, IF (amps)
1.4
3
2
1
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
–50
0
0
1
2
3
4
FORWARD VOLTAGE, VF (volts)
5
6
SPECTRAL OUTPUT
–25
0
25
50
AMBIENT TEMPERATURE (°C)
75
100
POWER OUTPUT vs FORWARD CURRENT
1,000
100
80
POWER OUTPUT, Po (mW)
RELATIVE POWER OUTPUT (%)
TYPICAL CHARACTERISTICS
IF = 50mA
80
103
STRESS TIME, (hrs)
0.1
RADIATION PATTERN
90
102
t
T
100
IF = 20mA
101
D=
t
0.1
DEGRADATION CURVE
100
60
t = 100µs
1
0.01
0.01
0
25
MAXIMUM PEAK PULSE CURRENT
60
40
100
10
DC
PULSE
10µs, 100Hz
20
0
750
800
850
900
WAVELENGTH, λ(nm)
950
1,000
1
10
100
1,000
FORWARD CURRENT, IF (mA)
10,000
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335 Fax: (805) 499-8108
Email: [email protected] Web Site: www.optodiode.com
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