SUPER HIGH-POWER GaAlAs IR EMITTERS FEATURES ANODE (CASE) EPOXY • • • • • .357 .362 .039 .048 .100 .018 .297 .302 .200 .014 .018 All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Two cathode pins must be externally connected together. 20 .031 Ultra high power output Four wire bonds on die corners Very uniform optical beam Standard 3-lead TO-39 hermetic package Chip size .030 x .030 inches 13 .130 MAX OD-100 CATHODE .040 45* .500 PARAMETERS TEST CONDITIONS IF = 500mA IF = 10A Total Power Output, Po Radiant Intensity, Ie MIN 80 CE IF = 500mA Peak Emission Wavelength, λP Spectral Bandwidth at 50%, Δλ IF = 50mA DE Half Intensity Beam Angle, θ Forward Voltage, VF IF = 500mA IR = 10μA VR = 0V Reverse Breakdown Voltage, VR MAX UNITS mW 60 mW/sr 880 nm 80 nm 110 Deg 30 LI F Rise Time TYP 100 1300 1.65 5 E Capacitance, C Fall Time MB E ELECTRO-OPTICAL CHARACTERISTICS AT 25°C R RoHS 2 Volts Volts 90 pF 0.7 μsec 0.7 μsec ABSOLUTE MAXIMUM RATINGS AT 25°C CASE Power Dissipation1 1000 mW Continuous Forward Current OF 500mA Peak Forward Current (10μs, 400Hz)2 10A Reverse Voltage 5V Lead Soldering Temperature (1/16" from case for 10sec) 260°C EN D 1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C THERMAL PARAMETERS Storage and Operating Temperature Range -55°C to 100°C Maximum Junction Temperature 100°C Thermal Resistance, RTHJA1 145°C/W Typical Thermal Resistance, RTHJA2 75°C/W Typical 1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25°C 1260 Calle Suerte, Camarillo, California 93012 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013 SUPER HIGH-POWER GaAlAs IR EMITTERS 100 INFINITE HEAT SINK 700 600 500 NO HEAT SINK 400 300 100 100 50 75 AMBIENT TEMPERATURE (°C) t D= T 0.1 1 DUTY CYCLE, D (%) 80 IF = 250mA 70 IF = 450mA 103 STRESS TIME, (hrs) 104 40 20 FE 8 RELATIVE POWER OUTPUT FORWARD I-V CHARACTERISTICS 10 LI 6 4 2 100 60 0 –100 –80 105 DE 102 80 CE TCASE = 25°C NO PRE BURN-IN PERFORMED 101 10 RADIATION PATTERN 100 60 t T Ip DEGRADATION CURVE IF = 150mA 12 t = 100μs 1 0.1 0.01 100 90 50 FORWARD CURRENT, IF (amps) 25 t = 50μs R 0 t = 10μs 10 MB E POWER DISSIPATION (mW) 800 200 RELATIVE POWER OUTPUT (%) TYPICAL CHARACTERISTICS MAXIMUM RATINGS 900 13 PEAK FORWARD CURRENT, Ip (amps) 1,000 MAXIMUM PEAK PULSE CURRENT 20 THERMAL DERATING CURVE RELATIVE POWER OUTPUT (%) 1,100 OD-100 –60 –40 –20 0 20 40 BEAM ANGLE, θ(deg) 60 80 100 POWER OUTPUT vs TEMPERATURE 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 OF 0.6 0.5 –50 0 0 2 4 6 FORWARD VOLTAGE, VF (volts) 8 10 SPECTRAL OUTPUT 0 25 50 AMBIENT TEMPERATURE (°C) 75 100 POWER OUTPUT vs FORWARD CURRENT 1,000 EN D 100 80 POWER OUTPUT, Po (mW) RELATIVE POWER OUTPUT (%) –25 60 40 100 10 20 0 750 800 850 900 WAVELENGTH, λ(nm) 950 1,000 1 10 DC PULSE 10μs, 100Hz 100 1,000 FORWARD CURRENT, IF (mA) 10,000 1260 Calle Suerte, Camarillo, California 93012 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013