SPDT DC to 40 GHz, RF – MEMS Drain 1 FEATURES Gate 1 ■ High Isolation (20 dB typical @10 GHz) ■ Low Insertion Loss (0.4 dB typical @10 GHz) ■ Typical On Resistance < 3.0 Ω ■ Hermetically Sealed ■ Long Life (>1011 cycles) Electrostatic Actuation, High Off Resistance (>1 GΩ), Fast Switching (5 µs), Current Handling (400 mA) ±100V Signal Range, Near Zero Harmonic Distortion, No Quiescent Power Dissipation DESCRIPTION Drain Gate 2 Source RMSW 220D™ RF Input Parameters The RMSW220D™ is a Single Pole Double Throw (SPDT) Reflective RF Switch utilizing Radant MEMS Inc. recent breakthrough technology that delivers high-linearity, highisolation and low-insertion loss in a wafer-scale package. This device is ideally suited for use in many applications such as wireless (i.e. handsets, WLAN, broadband wireless access, GPS receivers), RF and Microwave Multi-throw switches, Radar Beam Steering Antennas, Phase shifters, and RF Test Equipment. Functional Block Diagram Source Drain 2 2 GHz 5 GHz 10 GHz 25 GHz 35 GHz < 0.3 dB < 0.4 dB < 0.5 dB < 0.6 dB < 0.8 dB Isolation > 32 dB > 25 dB > 20 dB > 17 dB > 13 dB Return Loss < -20 dB < -20 dB < -19 dB < -18 dB < -16 dB Frequency Insertion Loss Input IP3 (Two-tone inputs 10 GHz and 10.001 GHz @ 27 dBm) RF Power Rating 30 dBm Active Life Cycle, (cold-Switched) 1011 Notes: Product performance specifications and switch operation are for cold switching only. Hot switching with RF input power greater than –10 dBm can degrade lifetime of switch. DC Input Parameters Actuation Voltage, typ. Actuation Power Consumption Drain Gate > 65 dBm 90 2µW @ 1 kHz switching rate Switch Current, Max. (Cold) 250 mA Switch Current, Max. (Hot) 50 mA Drain Switching Time, Max. (10kHz, Varies with Control Voltage) Gate Operating Temperatures Storage Temperatures 5 µs - 40 ̊C to 85 ̊C - 55 ̊C to 150 ̊C 255 Hudson Road, Stow, MA01775 ● Tel: 978-562-3866 ● Fax: 978-562-6277 ● Email: [email protected] SPDT DC to 40 GHz, RF – MEMS Typical Performance S21 - rf2 S11 - rf1 dB S11 - rf2 8 4 -15 3 dB 5 1 7 5 0 6 -20 2 -5 3 2 -30 -10 -15 1 -35 -20 -40 -25 -45 -30 -50 -35 -55 -40 -60 Return Loss Isolation -25 2 GHz -34.33 dB 5 GHz -26.69 dB 15 GHz -16.90 dB 5 20 GHz -17.20 dB 6 25 GHz -19.25 dB 7 30 GHz -16.62 dB 8 35 GHz -13.27 dB S11 - rf1 dB S11 - rf2 5 0 1 2 3 4 5 -5 6 -0.4 1 2 GHz -0.29 dB 2 5 GHz -0.33 dB 3 10 GHz -0.36 dB 4 15 GHz -0.40 dB 5 20 GHz -0.39 dB 6 25 GHz -0.43 dB -10 7 -0.6 8 -15 -0.8 -20 -1 -25 -1.2 -30 7 -1.4 -35 30 GHz -0.65 dB 8 -1.6 -40 35 GHz -0.80 dB -1.8 -45 Start: 50 MHz S21 - rf2 0 -0.2 10 GHz -19.96 dB 4 S21 - rf1 0.2 Return Loss S21 - rf1 -10 Insertion Loss dB -45 Start: 50 MHz Stop: 40 GHz Isolation Stop: 40 GHz Insertion Loss *Measurement results include the effects of two 1 mil diameter bond wires on each RF pad. Handling Procedures The following precautions should be observed to avoid damage: Static sensitivity — RF MEMS switches integrated circuits are ESD sensitive and can be damaged by static electricity. Use proper ESD precautions when handling these devices. Maximum Rating — The absolute maximum input power is 2 watts. Nominal Device Dimensions 100 µm RMI Bond Pad 1.371.45 mmmm 300 µm 650 µm 200 µm 250 µm Gold metal on backside 300 µm 1.42 1.45 mm 100 µm 255 Hudson Road, Stow, MA01775 ● Tel: 978-562-3866 ● Fax: 978-562-6277 ● Email: [email protected]